Download or read book Modeling and Design of PVT Growth of Silicon Carbide Crystals written by Ronghui Ma and published by . This book was released on 2003 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of the Sublimation Growth of Silicon Carbide Crystals written by Peter Råback and published by . This book was released on 1999 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals by Physical Vapor Treatment written by Jeffrey B. Allen and published by . This book was released on 2011 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Intelligent Modeling Design and Control of Crystal Growth Processes written by and published by . This book was released on 2000 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth of single crystals is the critical beginning step for electronic, opto-electronic, MEMS and many other devices. This MURI program took an integrated approach towards modeling, design and control of crystal growth processes and in conjunction with growth and characterization experiments developed much better understanding of growth phenomena and materials defects. It led to the development of most comprehensive and accurate models that account for conduction, convection and volumetric, spectral radiation heat transfer, oscillatory and turbulent flows, transport and segregation of dopants and impurities, phase change, an applied magnetic and/or electric field, and generation and multiplication of crystal defects. Using state-of-the-art adaptive grid generation techniques and parallel algorithms, the models can perform three-dimensional, dynamic simulations. While establishing white beam x-ray topography as the leading technique for crystal characterization, this research led to many new theories for grow the behavior and defects. Advanced model-based control algorithms were developed for in-situ synthesis and Czochralski growth. Notable among many successful technology transfer projects are: AFRL-developed one-step in-situ synthesis and growth of indium phosphide crystals, growth of large diameter silicon carbide crystals, 500 mm diameter silicon tube growth, transport model for hydrothermal growth, wire saw technology and high yield polysilicon production. Besides involving numerous faculty, the project succeeded in training a large number of postdoctoral fellows and undergraduate and graduate students in crystal growth.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Growth of 2H Silicon Carbide Crystals written by J. Anthony Powell and published by . This book was released on 1969 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Technology written by Kullaiah Byrappa and published by Elsevier. This book was released on 2003-03-21 with total page 613 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers.The book begins with ""Growth Histories of Mineral Crystals"" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Download or read book A Transient Model for the Sublimation Growth of Silicon Carbide Single Crystals written by and published by . This book was released on 1998 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Crystal Growth written by Tatau Nishinaga and published by . This book was released on 1994 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2003-10-08 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2011-09-22 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.
Download or read book A Unique High temperature High pressure Crystal Growth System for Silicon Carbide written by J. R. Littler and published by . This book was released on 1973 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).
Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by Trans Tech Publications Ltd. This book was released on 2005-05-15 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Download or read book ICCGE 19 OMVPE 19 Program and Abstracts eBook written by ICCGE-19/OMVPE-19/AACG and published by CTI Meeting Technology. This book was released on 2019-07-11 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).
Download or read book ACCGE 2015 Abstracts eBook written by American Association for Crystal Growth (AACG) and published by Coe Truman International, LLC. This book was released on 2015-07-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.
Download or read book Silicon Carbide and Related Materials 2007 written by Akira Suzuki and published by Trans Tech Publications Ltd. This book was released on 2008-09-26 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters. Volume is indexed by Thomson Reuters CPCI-S (WoS).
