Download or read book MOCVD and MO ALE Growth and Characterization of Indium Containing III V Compound Semiconductors and Heterostructures written by Weon Guk Jeong and published by . This book was released on 1990 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1990 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Growth and Characterization of III V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition written by Pamela Kay York and published by . This book was released on 1990 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Wide Band gap Group III Oxide Semiconductors by MOCVD written by Armando Hernandez (Jr.) and published by . This book was released on 2021 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation work is focused on the deposition of gallium oxide (Ga2O3) thin films by metal organic chemical vapor deposition (MOCVD) method. This material belongs to a special group of wide bandgap oxide semiconductors with high optical transmittance and high levels of conductivity. The importance of this material is generated by the wide range of applications of electronic and optoelectronic devices such as MOSFET's, photo diodes, solar cells, LED's, laser diodes, sensors etc. Through MOCVD technique, an implementation of a Si4+ dopant was incorporated in the monoclinic Îø-Ga2O3 crystal structure on homoepitaxial and heteroepitaxial Îø-Ga2O3 single crystal wafers. The MOCVD process allowed us to deposit at a growth rate of 1 Îơm/hour while controlling the electrical transport properties with this dopant. These films were carefully characterized by surface morphology, crystal structure, levels of conductivity and trapping defects. The work shows that the electron density and conductivity of MOCVD Ga2O3 films are mainly governed by the interplay between dopant concentration, C concentration and the presence of trapping defects in the films, which is most likely applicable for other oxide films grown by MOCVD. Conductive films of Ga2O3 with resistivity in the order of 0.07 Î♭.cm were successfully grown. The electron density in most of these films was in the range of 1019 cm8́23 but the mobility was limited to 1.5 cm2/V)́5s. Higher mobility of 30 cm2/V)́5s was obtained in some films at the expense of carrier concentration by reducing Si doping level resulting in resistivity in the order of 0.3 Î♭.cm. This range of conductivity and mobility is relevant for field-effect transistors (FET) and the applications of Ga2O3 as transparent FET in Deep Ultra-Violet (DUV) technology. The second part of this work focuses on investigating the electronic and crystal structure properties of an indium gallium oxide alloy (IGO) doped with Si4+ ions through MOCVD technique on c-sapphire substrate. This work aims to find a tunable range for engineering the band gap of this new alloyed material by incorporating indium into the lattice of the Îø-Ga2O3 crystal structure. Various dopant ratios were also implemented to adjust the electrical properties of (IGO) and highly conductive IGO films were realized through Si doping.

Download or read book Growth and Characterization of III V Semiconductors by Metalorganic Chemical Vapor Deposition Using Low Toxicity Tertiarybutylarsine and Tertiarybutylphosphine Precursors written by Michael Patrick Mack and published by . This book was released on 1993 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Indium Phosphide and Related Materials written by Avishay Katz and published by Artech House Publishers. This book was released on 1992 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an integrated survey of the most recent research, engineering development and commercial application of indium phosphide and related materials. The book is tutorial in nature, rich in application-engineering detail and emphasizes the designing and implementing of practical devices.

Download or read book Growth and Characterization of III V Semiconductors with Rare Earth Impurities for Optoelectronic Devices written by and published by . This book was released on 1993 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Characterization and Modeling of Compositionally Matched Indium Arsenide Antimonide Bulk and Multiple Quantum Well Semiconductors written by Scott C. Phillips and published by . This book was released on 2004-03 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result of the quantum well always having slightly higher energy than its bulk counterpart was observed. An etalon effect also was observed in the quantum wells, caused by the cladding layers in those samples. Photoluminescence spectra also were collected to characterize the change in electron temperature (Te) as the excitation power was varied. As expected, electron temperature increased with increasing power and increasing temperature. The start of the longitudinal optical phonon-dominated cooling range due to excitation intensity also was determined for the samples from 1/Te. It was found that the quantum well required higher excitation intensities to achieve this effect. Lastly, the energy transitions found for the quantum well samples were compared to those found by a finite element method model. The predicted energies all had a constant value above what was found experimentally, indicating the program had a translation error within it. (10 tables, 47 figures, 18 refs.)

Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MOCVD Growth and Characterization of III nitride for Optoelectronic Device Applications written by Chien-Jen Sun and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2092 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Physical Properties of III V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields

Download or read book Electrochemistry of Metal Chalcogenides written by Mirtat Bouroushian and published by Springer Science & Business Media. This book was released on 2010-04-23 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: The author provides a unified account of the electrochemical material science of metal chalcogenide (MCh) compounds and alloys with regard to their synthesis, processing and applications. Starting with the chemical fundamentals of the chalcogens and their major compounds, the initial part of the book includes a systematic description of the MCh solids on the basis of the Periodic Table in terms of their structures and key properties. This is followed by a general discussion on the electrochemistry of chalcogen species, and the principles underlying the electrochemical formation of inorganic compounds/alloys. The core of the book offers an insight into available experimental results and inferences regarding the electrochemical preparation and microstructural control of conventional and novel MCh structures. It also aims to survey their photoelectrochemistry, both from a material-oriented point of view and as connected to specific processes such as photocatalysis and solar energy conversion. Finally, the book illustrates the relevance of MCh materials to various applications of electrochemical interest such as (electro)catalysis in fuel cells, energy storage with intercalation electrodes, and ion sensing.