Download or read book Millimeter Wave Transceiver Frontend Circuits in Advanced Silicon Germanium Technolgy with Considerations for On chip Passive Component Design and Simulation written by Yanxin Wang and published by . This book was released on 2006 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design approach for implementing millimeter wave wireless transceiver front-end circuits is proposed. The design methodology takes advantage in advances in Silicon Germanium (SiGe) fabrication technology and sophisticated Electro-Magnetic (EM) simulation software to ensure successful implementation of circuits designed to operate in millimeter wave range. The discussion covers basic circuits common in typical transceiver architecture such as low noise amplifier (LNA), active balun, and mixer. The design methodology is not limited to the above circuits. It can be applied to many other situations where operating frequency is high and the dimensions of passive structures are comparable to signal wavelength.
Download or read book Millimeter Wave Transceiver Frontend Circuits in Advanced Sige Technology with Considerations for On chip Passive Component Design and Simulation written by Yanxin Wang and published by . This book was released on 2006 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Micro and Millimeter Wave Circuit Design in Silicon with Considerations for Noise Reduction and On chip Passive Elements written by Javier Alvarado and published by . This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amid the exponentially growing demand of wireless multimedia applications, the need for exceptionally high performance communication devices has leapt to the forefront of electronic design. Advances in the speed of the silicon transistor and increased complexity of the integrated circuit metallization stack, along with sophisticated Electro-Magnetic (EM) simulation software has fortified the capability to meet new and seemingly unrelenting requirements on a platform common to most consumer electronics.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for Mm wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Transceiver Technologies for Millimeter Wave Beam Steering Applications Band 71 written by Yi-Fan Tsao and published by Cuvillier Verlag. This book was released on 2022-11-08 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues. To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-μm GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.
Download or read book Silicon Based Millimeter Wave Devices written by Johann-Friedrich Luy and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Performance Millimeter Wave Transceiver Circuits for V band Applications Using Silicon Processes written by Chi Yiu Law and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Wireless applications are embedded into many electronic products. The lower frequency bands have been allocated with various applications, but this allocation increases the concern of bandwidth congestion. V-band spectrum, from 57 GHz to 64 GHz, has great potential due to its wide available bandwidth. Recent research and commercial products have shown that, the feasibility of wireless systems in the millimeter-wave frequency band improves as technology progresses. However, the required bandwidths are still high for the silicon technology. Moreover, at millimeter-wave frequencies, many device parasitics are significant. Parasitics neglected at lower frequencies such as gate inductance and resistance may turn into major design disruptions. The intrinsic model that is heavily relied upon often becomes insignificant. Most of the time, designers have to spend tremendous amounts of time on simulation and device modeling to achieve adequate performance for V-band. Another noticeable change for the millimeter-wave circuit is the usage of passive components. The design of microstrip structures to replace traditional lumped components becomes favorable due to the size reduction of microstrip structures at millimeter-wave frequencies. To demonstrate the design methodology, a few often used transceiver circuit blocks have been designed. These blocks includes the Power Amplifier (PA), which is normally used in the transmitter chain, a Low Noise Amplifier (LNA), the first active circuit on the receiver chain, and a Voltage-Controlled Oscillator (VCO), which is used in both transmitter and receiver chains. The power amplifier was fabricated using 90 nm TSMC CMOS process. It outputs 20 dBm of saturation power and has power gain of 20.6 dBm. The Low Noise Amplifier and Voltage-Controlled Oscillator were fabricated using a 0.13 [mu]m IBM BiCMOS SiGe 8HP process. The LNA has gain of 17 dB across the 57 GHz to 64 GHz band and has noise figure of 4.5 dB. The VCO has a phase noise of -111 dBc at 1 MHz of frequency offset of 60 GHz and tuning range from 56 GHz to 65 GHz.
Download or read book Circuits for MM wave Radio and Radar Transceiver Front Ends written by Ekaterina Tyshchenko and published by . This book was released on 2011 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT technologies and a 95 GHz receiver in 65 nm CMOS technology. Optimization and modeling of all passive components and transistor biasing at peak-fT and peak-f MAX current densities are employed to obtain higher frequency operation of circuit blocks compared to state of the art. These circuit blocks include static and dynamic frequency dividers, voltage-controlled oscillators, and tuned mm-wave amplifiers. Design procedures for a 100 GHz static divider, a 136 GHz dynamic divider, as well as low-power divider topologies are presented. A methodology for the design of quadrature voltage-controlled oscillators in CMOS and SiGe technologies is described, together with a technique for reduced-power LO-path design. Tuned 5-stage 140 GHz, 160 GHz, and 170 GHz amplifiers with more than 15 dB in SiGe HBT technology are reported.Using these circuit building blocks, a 95 GHz receiver in 65 nm CMOS technology with 12.5 dB gain, 7 dB noise figure, and 206mW. Also, several 165 GHz transceivers are implemented in SiGe HBT technology. The 165 GHz transceivers that include an oscillator, a divider, RX, LO, and TX amplifiers, and a mixer, were designed with and without on-chip antennas. They have -3 dB conversion gain, all achieved at RF, and -3.5 dBm output power. Following that, a 140 GHz fully-integrated transceiver and a 140 GHz transceiver array with on-chip patch antennas were designed in a 0.13micron SiGe BiCMOS technology, demonstrating the highest integration levels at this frequency in silicon to date. These transceivers feature 136-145 GHz voltage-controlled oscillators, 20 dB receive-amplifiers and mixers,transmit-amplifiers with amplitude-shift keying modulation, and variable-gain IF amplifiers. At 140 GHz the transceivers have up to 32 dB conversion gain and -8 dBm output power. Wireless data transmission at 4 Gb/s was demonstrated over 1.15m with off-chip horn antennas, and over 2 cm with the on chip antennas. With on-chip antennas, the transceiver could detect a Doppler shift of as little as 25 Hz. Both transceivers were also operational in frequency-modulated continuous-wave radar mode.
Download or read book Three Dimensional Integration and Modeling written by Jong-Hoon Lee and published by Morgan & Claypool Publishers. This book was released on 2007-12-01 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a step-by-step discussion of the 3D integration approach for the development of compact system-on-package (SOP) front-ends.Various examples of fully-integrated passive building blocks (cavity/microstip filters, duplexers, antennas), as well as a multilayer ceramic (LTCC) V-band transceiver front-end midule demonstrate the revolutionary effects of this approach in RF/Wireless packaging and multifunctional miniaturization. Designs covered are based on novel ideas and are presented for the first time for millimeterwave (60GHz) ultrabroadband wireless modules. Table of Contents: Introduction / Background on Technologies for Millimeter-Wave Passive Front-Ends / Three-Dimensional Packaging in Multilayer Organic Substrates / Microstrip-Type Integrated Passives / Cavity-Type Integrated Passives / Three-Dimensional Antenna Architectures / Fully Integrated Three-Dimensional Passive Front-Ends / References
Download or read book High Performance Radio frequency and Millimeter wave Front end Integrated Circuits Design in Silicon based Technologies written by Jihwan Kim and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.
Download or read book Data Transmission at Millimeter Waves written by Khaled Khalaf and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the design of a receiver front-end circuit for operation in the 60GHz range in 90nm CMOS. Physical layout of the test circuit and post-layout simulations for the implementation of a test chip including the QVCO and the first stage divider are also presented. The content of this book is particularly of interest to those working on mm-wave frequency generation and signal reception.
Download or read book Design Simulation and Applications of Inductors and Transformers for Si RF ICS written by Ali M. Niknejad and published by . This book was released on 2014-01-15 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Based RF Front Ends for Ultra Wideband Radios written by Aminghasem Safarian and published by Springer. This book was released on 2009-09-03 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive study of silicon-based distributed architectures in wideband circuits are presented in this book. Novel circuit architectures for ultra-wideband (UWB) wireless technologies are described. The book begins with an introduction of several transceiver architectures for UWB. The discussion then focuses on RF front-end of the UWB radio. Therefore, the book will be of interest to RF circuit designers and students.
Download or read book Ultrabreitbandige Millimeterwellen Schaltungen und Systeme in Silizium Germanium Technologie written by Ismail Nasr and published by . This book was released on 2014 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Silicon Substrate Properties at Mm wave and THz Frequencies and Their Impact on Passive and Active Devices written by Wen Shu and published by . This book was released on 2015 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Millimeter-wave (mm-wave) complementary metal-oxide semiconductor (CMOS) circuits have emerged because of improved device performance with silicon technology which realizes high level integration and low cost. Accurate substrate modeling is very important for circuit design especially at mm-wave frequencies. The Drude model can be used to capture the silicon properties at terahertz (THz) frequencies. Fourier Transform Infrared Spectroscopy (FTIR) measurement is used to confirm the necessary consideration of the Drude model for silicon substrate modeling at THz frequencies. Useful information about the silicon substrate properties at mm-wave frequencies have been obtained by using the devices built on various substrates up to sub-millimeter wave frequencies. A coplanar waveguide (CPW) transmission line is one of the widely used passive devices in mm-wave circuits. Silicon-based CPWs are designed and analyzed using electromagnetic simulation tools (HFSS and Momentum) on different resistivity silicon substrates. The silicon substrate effects are captured and visualized by the field distribution. A simple, physics-based, frequency-dependent lumped circuit is proposed to model the physical behavior of the CPWs over a broad-frequency range (up to 110 GHz), with various geometries and substrate resistivities using accurate substrate loss modeling. The transitions between three operation modes (the slow-wave mode, skin-effect mode and dielectric quasi-transverse electromagnetic (TEM) mode) are obtained smoothly with one circuit. Measured S-parameters for different geometrical CPWs are used to derive the RLGC parameters and show good agreement with the circuit model. The lumped circuit model derived from the CPWs is a unified one that can also be applied to other devices such as an inductor and transformer. New circuit models for a simple inductor and transformers are proposed based on the lumped CPW model with the same elements and equations. Measured results from simple single-layer inductors and transformers are analyzed to validate the new circuits beyond their self-resonance frequency and good agreement is obtained. Beyond passive components, the substrate network of an active device model is being studied using concepts from the unified model. Finally, a graphical calculator is developed and based on the unified model for use in the design, analysis and optimization of planar transmission lines and inductors.
Download or read book Highly Integrated Millimeter Wave CMOS Transceiver Frontend Circuits for Radar and Communication Systems written by Radu Ciocoveanu and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
