Download or read book Millimeter wave Harmonic Oscillator Design for Wide Tuning Range and High Power written by Rouzbeh Kananizadeh and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A voltage controlled oscillator (VCO) with ultra wide tuning range is presented in the second chapter. This VCO incorporates a system of coupled oscillators with two Active Mode Switching (AMS) blocks. The AMS blocks excite the main VCO’s to operate in two distinct frequency bands. An overlap between the two frequency bands has extended the tuning range of the VCO. By turning the AMS blocks off, low-loss and low-capacitance behavior of these blocks result in wide tuning range and high harmonic output power at high millimeter-wave (mmwave) frequencies. On the other hand, by turning the AMS blocks on, their loss-cancelling and capacitance-tuning behavior yield to higher power and wider tuning range with a lower center frequency. By having sufficient frequency overlap between the two modes, the implementedV CO achieves record tuning range of 20.7% at 190.5 GHz with maximum output power of -2.1dBm. This tuning range is significantly higher than other reported silicon-based VCO’s with center frequencies higher than 120 GHz. The second chapter also includes a thorough study on Colpitts oscillators and their capability for wide tuning range. Third chapter studies nonlinear behavior of transistors to boost the output power of harmonic oscillators. Based on time-variant behavior of Metal Oxide Semiconductor Field Effect Transistors (MOS-FETs) in large-signal operations, harmonic translations and their mutual effects are analyzed. Large amplitudes at terminal voltages of these transistors, push them into different regions of operation. In this chapter, harmonic translations are derived as a result of such changes in operation region of transistors. Operation in triode region for a portion of oscillation cycle results in iterative harmonic translations between fundamental frequency and second harmonic. They boost each other constructively for significantly stronger oscillation, more second harmonic output power and enhanced dc-to-RF efficiency. Based on these analysis, a 215 GHz signal source, implemented in a TSMC 65 nm CMOS LP is presented. The proposed oscillator achieves maximum output power of 5.6 dBm and dc-to-RF efficiency of 4.6%. The measured phase noiseis -94.6 dBc/Hz at 1 MHz offset. The proposed oscillator occupies only 0.08 mm2 of chip area. Using the concept of harmonic translations in nonlinear circuits, the fourth chapter analyzes the fundamental limits for maximum second harmonic power generation for any given transistor. Moreover, optimum waveforms at gate-source and drain-source terminals which yield to this maximum limit in CMOS transistors are derived. Two oscillators are implemented in a TSMC 65nm CMOS GP process. Transistors in these oscillators have optimum voltage waveforms at their terminals. Thus, they deliver state-of-the-art second harmonic output power, while operating at relatively higher frequencies than related arts. One of the proposed oscillators has maximum output power of 4.9 dBm and peak dc-to-RF efficiency of 3% at 300 GHz. The implemented oscillators occupy 0.16 mm2 of chip area.

Download or read book Ultra wide Tuning Range Signal Generation in CMOS for Millimeter Wave Rotational Spectroscopy written by Jing Zhang and published by . This book was released on 2015 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromagnetic waves in the millimeter and submillimeter wave frequency range are being utilized in fast-scan rotational spectroscopy for detection and identification of gas molecules. This technique can be used for monitoring indoor air quality, gas leaks, human breath, and others for a wide variety of safety, security and medical applications. Advances of the high frequency capability of complementary metal-oxide semiconductor (CMOS) have made it an affordable means for implementing the electronics for these spectroscopy systems. A signal generation circuit operating at ~100 GHz and higher with an ultra-wide frequency tuning range (~50%) is a key component for the systems. This research focuses on developing key techniques for ultra-wide tuning millimeter wave signal generation in CMOS. First, the applicability of using NMOS switched variable inductors in millimeter wave frequencies for wide frequency tuning is demonstrated via design of an LC voltage-controlled oscillator (LC VCO) incorporating NMOS switched variable inductors and tunable output buffers. The prototype fabricated in a TI 65-nm bulk CMOS process demonstrated a wide frequency tuning of 21.5 to 33.4 GHz without a frequency tuning gap. The phase noise at 10-MHz offset of VCO varies from -117 to -109 dBc/Hz. The oscillator core consumes 4 or 6 mA from a 1.2-V power supply. These represent a record 43.3% tuning range with FOMT ranging from -191.7 to -181.9 dBc/Hz. With tunable output buffers, the measured signal output power is above -15 dBm across the entire frequency range. Second, a passive quadrature coupling and broadband harmonic combining network is demonstrated. This network has 3-dB lower theoretical fundamental-to-4th order harmonic conversion loss than that of the linear superposition technique, with no extra DC power consumption, lower phase noise, while bypassing the need for a broadband on-chip bias-tee. A quadrature LC VCO incorporating this novel passive coupling and broadband harmonic combining for frequency multiplication by 4 is fabricated to generate signals over a wide frequency range above 90 GHz. The prototype fabricated in TI 65-nm bulk CMOS demonstrated a continuous frequency tuning from 85 to 127 GHz. This ~40% frequency tuning range is at least 4X higher than the other CMOS implementations with center frequency over 90 GHz. At power consumption of 30~45 mW from a 1.5-V power supply, the measured output power varies from -15 to -23 dBm and phase noise at 10-MHz offset varies from -108 to -102 dBc/Hz over the output frequency range. These are sufficient for use in millimeter wave rotational spectroscopy. This work paves the way for implementing a single-chip CMOS transmitter for rotational spectroscopy at 180-300 GHz.

Download or read book Design of Millimeter Wave High Efficiency Oscillator and High Gain Amplifier written by Hao Wang and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of dissertation is to explore feasibility of designing millimeter-wave (mmWave) circuits in CMOS technology, especially when frequency is close to the maximum oscillation frequency f[subscript max] of the active device. In this dissertation, an embedding network method is proposed to design high efficiency fundamental oscillators and high gain amplifier. First, it reports an approach to designing compact high efficiency mmWave fundamental oscillators operating above the f[subscript max]/2 of the active device. The approach takes full consideration of the nonlinearity of the active device and the finite quality factor of the passive devices to provide an accurate and optimal oscillator design in terms of the output power and efficiency. 213-GHz single-ended and differential fundamental oscillators in 65-nm CMOS technology are presented to demonstrate the effectiveness of the proposed method. Using a compact capacitive transformer design, the single-ended oscillator achieves 0.79-mW output power per transistor (16 [mu]m) at 1.0-V supply and a peak dc-to-RF efficiency of 8.02% (V[subscript DD]=0.80 V) within a core area of 0.0101 mm2, and the measured phase noise is −93.4 dBc/Hz at 1-MHz offset. The differential oscillator exhibits approximately the same performance. A 213-GHz fundamental voltage-controlled oscillator (VCO) with bulk tuning method is also developed in this work. The measured peak efficiency of the VCO is 6.02% with a tuning rang of 2.3% at 0.6-V supply.In order to further improve dc-to-RF efficiency, an optimization-based design methodology is then proposed for high-power and high-efficiency mmWave fundamental oscillators in CMOS technology. The optimization is formulated to take into account the loss of the passive components to result in an optimal circuit design. The proposed approach can produce the final design in a single pass of optimization with a fast and robust convergence profile. A comparative study between the T - and the [pi]-embedding networks is presented. It shows that T -embedding is superior to [pi]-embedding in terms of flexibility in biasing and sensitivity to component Q. A design example of a 215-GHz fundamental oscillator in a 65-nm CMOS technology is presented to demonstrate the effectiveness of the proposed design approach. The oscillator achieves 5.17-dBm peak output power at 1.2-V supply with a corresponding dc-to-RF efficiency 12.3% and a peak efficiency of 13.7%. The measured phase noise is −90.0 dBc/Hz and −116.2 dBc/Hz at 1 MHz and 10 MHz offset, respectively. Lastly, embedding network theory is presented to design high gain amplifier in this dissertation. Two embedding theories, constant GC/U and G[subscript max]/GC, are proposed. A 210-GHz high gain amplifier example is designed. Two 16 [mu]m NMOS transistors consist of a differential circuit with V[subscript DD] = 1.2 V and VG = 0.45 V. The total dc power of the designed 210-GHz amplifier is 12.8 mW. The simulated Gain S21 is 16.66 dB. NF is 7.38 dB. Stability factor k is 3.82 at 210 GHz. The simulated 1dB compression point P1dB, input referred third-order intercept point, IIP3 is -22.33 dB, and -12.97 dB, respectively. These simulated results demonstrate the effectiveness of the proposed design theory.

Download or read book Mm wave Circuit Design in 16nm FinFET for 6G Applications written by Bart Philippe and published by Springer Nature. This book was released on 2022-09-24 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.

Download or read book Standing Wave Integrated Circuits for Power Generation Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum written by Hossein Jalili and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.

Download or read book Frequency Synthesizers and Oscillator Architectures Based on Multi order Harmonic Generation written by Mohammed Abdul-Latif and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Frequency synthesizers are essential components for modern wireless and wireline communication systems as they provide the local oscillator signal required to transmit and receive data at very high rates. They are also vital for computing devices and microcontrollers as they generate the clocks required to run all the digital circuitry responsible for the high speed computations. Data rates and clocking speeds are continuously increasing to accommodate for the ever growing demand on data and computational power. This places stringent requirements on the performance metrics of frequency synthesizers. They are required to run at higher speeds, cover a wide range of frequencies, provide a low jitter/phase noise output and consume minimum power and area. In this work, we present new techniques and architectures for implementing high speed frequency synthesizers which fulfill the aforementioned requirements. We propose a new architecture and design approach for the realization of wideband millimeter-wave frequency synthesizers. This architecture uses two-step multi-order harmonic generation of a low frequency phase-locked signal to generate wideband mm-wave frequencies. A prototype of the proposed system is designed and fabricated in 90nm Complementary Metal Oxide Semiconductor (CMOS) technology. Measurement results demonstrated that a very wide tuning range of 5 to 32 GHz can be achieved, which is costly to implement using conventional techniques. Moreover the power consumption per octave resembles that of state-of-the art reports. Next, we propose the N-Push cyclic coupled ring oscillator (CCRO) architecture to implement two high performance oscillators: (1) a wideband N-Push/M-Push CCRO operating from 3.16-12.8GHz implemented by two harmonic generation operations using the availability of different phases from the CCRO, and (2) a 13-25GHz millimeter-wave N-Push CCRO with a low phase noise performance of -118dBc/Hz at 10MHz. The proposed oscillators achieve low phase noise with higher FOM than state of the art work. Finally, we present some improvement techniques applied to the performance of phase locked loops (PLLs). We present an adaptive low pass filtering technique which can reduce the reference spur of integer-N charge-pump based PLLs by around 20dB while maintaining the settling time of the original PLL. Another PLL is presented, which features very low power consumption targeting the Medical Implantable Communication Standard. It operates at 402-405 MHz while consuming 600microW from a 1V supply.

Download or read book A Dual Mode Wide Band Cmos Oscillator written by Shatam Agarwal and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband voltage-controlled oscillators are critical to the design of millimeter-wave (mm-wave) frequency synthesizers. This thesis proposes a design technique that can be used to significantly extend the achievable frequency span of an oscillator. A dual-band oscillator topology is described that can be configured to operate in one of two modes, by an electrical reconfiguration of the negative resistance core around the resonant tank, without switching passive elements within the tank itself. The configuration helps to minimize the difference in phase noise performance between the two modes, while achieving a wide tuning range. To verify the concept, an mm-wave VCO that operates at 30 GHz is designed in a commercial 0.18-um CMOS technology, with an approximate simulated tuning range of 20%. A dual-mode oscillator is also designed in 0.13-um CMOS technology at 60 GHz.

Download or read book A Dual mode Wide band CMOS Oscillator for Millimeter wave Applications written by Shatam Agarwal and published by . This book was released on 2010 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband voltage-controlled oscillators are critical to the design of millimeter wave frequency synthesizers. This thesis proposes a design technique that can be used to significantly extend the achievable frequency span of an oscillator. A dual-band oscillator topology is described that can be configured to operate in one of two modes, by an electrical reconfiguration of the negative resistance core around the resonant tank, without switching passive elements within the tank itself. The configuration helps to minimize the difference in phase noise performance between the two modes, while achieving a wide tuning range. To verify the concept, a mm-wave VCO that operates at 30-GHz is designed in a commercial 0.18-um CMOS technology, with an approximate simulated tuning range of 20%. A dual-mode oscillator is also designed in a 0.13-um technology at 60-GHz.

Download or read book Reconfigurable Dual mode Voltage controlled Oscillator and Wideband Frequency Synthesizer for Millimeter wave Applications written by Cheng-Hsien Hung and published by . This book was released on 2015 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Demands for high data-rate communications and high-precision sensing applications have pushed wireless systems towards higher operating frequencies where wider bandwidth is available. Examples of such applications include 60 GHz indoor communications and vehicular RADAR around 77 GHz. High-speed frequency synthesizers integrated in a CMOS process, with wide operating bandwidth, and low phase noise are key to low-cost transceiver implementations for such applications. The requirement to operate over a wide span of carrier frequencies arises from two key sources. The system itself often requires a wide tuning range, in excess of 5-10% of the carrier frequency. Further, it is necessary to compensate for the uncertainty in operating frequencies, caused by process and temperature variations. This dissertation introduces a dual-mode voltage-controlled oscillator (VCO) topology, embedded in a frequency synthesizer, for wideband operation. The VCO can operate in two oscillation modes by reconfiguring the active negative resistance core around the LC tank that is employed as the resonator element in the oscillator. A key aspect to the design is that the switches used for mode reconfiguration do not contribute to the tank loss. The frequency spacing of the two modes is determined by an accurate inductor ratio. It is demonstrated through analysis that in order to ensure mode-switching, the size of the switches needs be larger than a critical value, which is a function of the electrical properties of the cross-coupled, negative resistance core, as well as the resonator used in the design. The impact of noise injection and mismatch on switching behavior is also analyzed. The VCO topology has been implemented in a 65nm CMOS process. The design demonstrates measured tuning ranges of 56.9 GHz to 65.4 GHz, and 64.6 GHz to 75.3 GHz, in the two respective modes, for a total effective tuning range of 28%. The oscillator consumes 13 mW, with a 1 V-supply, and its Figure of Merit with tuning range (FOM[subscript T]) is -177.2 dB. An integer-N frequency synthesizer that employs the dual-mode VCO, has also been designed and verified in a 65 nm CMOS process. The synthesizer has a locking range from 56 GHz to 63.9 GHz in its low frequency mode. The total power consumption of the synthesizer, including output buffers, is approximately 50 mW. The in-band phase noise, at a locked frequency of 63.04 GHz, is -88.4 dBc/Hz at 1 MHz offset.

Download or read book Millimeter Wave Digitally Intensive Frequency Generation in CMOS written by Wanghua Wu and published by Academic Press. This book was released on 2015-09-23 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the digitally intensive time-domain architectures and techniques applied to millimeter-wave frequency synthesis, with the objective of improving performance and reducing the cost of implementation. Coverage includes system architecture, system level modeling, critical building block design, and digital calibration techniques, making it highly suitable for those who want to learn about mm-wave frequency generation for communication and radar applications, integrated circuit implementation, and time-domain circuit and system techniques. Highlights the challenges of frequency synthesis at mm-wave band using CMOS technology Compares the various approaches for mm-wave frequency generation (pros and cons) Introduces the digitally intensive synthesizer approach and its advantages Discusses the proper partitioning of the digitally intensive mm-wave frequency synthesizer into mm-wave, RF, analog, digital and software components Provides detailed design techniques from system level to circuit level Addresses system modeling, simulation techniques, design-for-test, and layout issues Demonstrates the use of time-domain techniques for high-performance mm-wave frequency synthesis

Download or read book High Frequency Oscillator Design for Integrated Transceivers written by J. van der Tang and published by Springer Science & Business Media. This book was released on 2006-01-12 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text covers the analysis and design of all high-frequency oscillators required to realize integrated transceivers for wireless and wired applications. Starting with an in-depth review of basic oscillator theory, the authors provide a detailed analysis of many oscillator types and circuit topologies.

Download or read book Solid state Terahertz and Millimeter wave Electronics written by Omeed Momeni and published by . This book was released on 2011 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is a growing interest in terahertz and mm-wave systems for compact, low cost and energy efficient imaging and spectroscopy. Detection of concealed weapons, cancer diagnosis, food quality control, and breath analyses for disease diagnosis are among many examples that will rapidly flourish if compact and on-chip terahertz systems are realized. There are few implementations of terahertz building blocks using compound semiconductors at lower terahertz range. Unfortunately, these processes have low yield, are cost inefficient, and are not suitable for integration of digital blocks on the same chip. On the other hand, while CMOS can overcome these challenges, the best reported fmax of CMOS transistors fall well below terahertz frequencies. To overcome these drawbacks, we have introduced systematic methodologies for designing circuits and components operating close to and beyond the conventional limits of the devices. These circuit blocks can effectively generate, combine, and process signals from multiple devices to achieve performances orders of magnitude better than the state of the art. The proposed techniques are general and can be used in any technology, including CMOS and other processes. As an example, in Chapter 1 we show a traveling-wave frequency multiplier for high power and wide-band terahertz and mm-wave signal generation. It takes advantage of standing-wave formation and loss cancelation in a distributed structure to generate high amplitude signals resulting in high harmonic power. Wide bandwidth operation and odd harmonic cancelation around the center frequency are the inherent properties of this frequency multiplier. Using this methodology, we implemented a frequency doubler that operates from 220 GHz to 275 GHz in a standard 65 nm CMOS process. Output power of -6.6 dBm (0.22 mW) and conversion loss of 11.4 dB are measured at 244 GHz. This signal source has twice the operating frequency and tuning range of the best reported CMOS multiplier and 10 times higher output power than the best reported CMOS realization. In Chapter 2 a systematic approach to designing high frequency and high power oscillators using activity condition is introduced. This method finds the best topology to achieve frequencies close to the fmax of the transistors. It also determines the maximum frequency of oscillation for a fixed circuit topology, considering the quality factor of the passive components. Using this technique, in a 0.13 [MICRO SIGN]m CMOS process, we design and implement 121 GHz and 104 GHz fundamental oscillators with the output power of -3.5 dBm and -2.7 dBm, respectively. Next, we introduce a novel triple-push structure to realize 256 GHz and 482 GHz oscillators. The 256 GHz oscillator was implemented in a 0.13 [MICRO SIGN]m CMOS process and the output power of -17 dBm was measured. The 482 GHz oscillator generates -7.9 dBm (160 [MICRO SIGN]W) in a 65 nm CMOS process which is 8,000 times more than any other CMOS sources at this frequency range. A systematic method to design high gain amplifiers at frequencies close to the fmax of the transistors is introduced in Chapter 3. This approach finds the optimum termination conditions to reach the maximum achievable gain of the device. Using this technique in a standard 130 nm CMOS process, we design and implement a 107 GHz amplifier with a gain of 12.5 dB, PAE of 4.4%, and saturated output power of>2.3 dBm, consuming 31 mW from a 0.95 V supply. The center frequency of this amplifier is higher than any other reported amplifier in 130 nm and 90 nm CMOS process. Other specifications such as gain and PAE is comparable to amplifiers in 65 nm CMOS process while consuming 1/3 of the DC power. Moreover, to go beyond the conventional limitations of passive circuits, we develop a method to perform signal processing using 2-D electrical lattices in Chapter 4. The rich 2-D propagation properties of the medium are used to introduce a novel, high quality factor filter called an electrical prism which is compatible with today's conventional integrated circuit processes. The proposed filter shows a quality factor much larger than the quality factor of the individual components at high mm-wave and terahertz frequencies. This structure also provides a negative effective index in a low pass LC lattice. Based on this idea, we show filters with quality factors of 130 at 230GHz and 420 at 460GHz consisting of elements with the quality factor of 10 and 20 respectively. The negative effective index and the filter behavior of the lattice is verified by measuring a prototype on a CMOS process at 32GHz-40GHz.

Download or read book Application of Dual Mode Wide Band CMOS Oscillators written by Abdolhossein Ayoubi and published by CreateSpace. This book was released on 2015-07-21 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband voltage-controlled oscillators are critical to the design of millimeter wave frequency synthesizers. This book proposes a design technique that can be used to significantly extend the achievable frequency span of an oscillator. A dual-band oscillator topology is described that can be configured to operate in one of two modes, by an electrical reconfiguration of the negative resistance core around the resonant tank, without switching passive elements within the tank itself. The configuration helps to minimize the difference in phase noise performance between the two modes, while achieving a wide tuning range. This book includes five chapters and through these chapters the necessary information for designing millimeter wave frequency synthesizers are provided for the readers.

Download or read book Microwave and Millimeter Wave Circuits and Systems written by Apostolos Georgiadis and published by John Wiley & Sons. This book was released on 2012-09-17 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microwave and Millimeter Wave Circuits and Systems: Emerging Design, Technologies and Applications provides a wide spectrum of current trends in the design of microwave and millimeter circuits and systems. In addition, the book identifies the state-of-the art challenges in microwave and millimeter wave circuits systems design such as behavioral modeling of circuit components, software radio and digitally enhanced front-ends, new and promising technologies such as substrate-integrated-waveguide (SIW) and wearable electronic systems, and emerging applications such as tracking of moving targets using ultra-wideband radar, and new generation satellite navigation systems. Each chapter treats a selected problem and challenge within the field of Microwave and Millimeter wave circuits, and contains case studies and examples where appropriate. Key Features: Discusses modeling and design strategies for new appealing applications in the domain of microwave and millimeter wave circuits and systems Written by experts active in the Microwave and Millimeter Wave frequency range (industry and academia) Addresses modeling/design/applications both from the circuit as from the system perspective Covers the latest innovations in the respective fields Each chapter treats a selected problem and challenge within the field of Microwave and Millimeter wave circuits, and contains case studies and examples where appropriate This book serves as an excellent reference for engineers, researchers, research project managers and engineers working in R&D, professors, and post-graduates studying related courses. It will also be of interest to professionals working in product development and PhD students.

Download or read book RF and mm Wave Power Generation in Silicon written by Hua Wang and published by Academic Press. This book was released on 2015-12-10 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: Power amplifier design fundamentals and methodologies Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy Contributions from the world-class experts from both academia and industry

Download or read book Discrete Oscillator Design written by Randall W. Rhea and published by Artech House. This book was released on 2014-05-14 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oscillators are an essential part of all spread spectrum, RF, and wireless systems, and todayOCOs engineers in the field need to have a firm grasp on how they are designed. Presenting an easy-to-understand, unified view of the subject, this authoritative resource covers the practical design of high-frequency oscillators with lumped, distributed, dielectric and piezoelectric resonators. Including numerous examples, the book details important linear, nonlinear harmonic balance, transient and noise analysis techniques. Moreover, the book shows you how to apply these techniques to a wide range of oscillators. You gain the knowledge needed to create unique designs that elegantly match your specification needs. Over 360 illustrations and more than 330 equations support key topics throughout the book.

Download or read book Analog and Mixed Signal Circuits in Nanoscale CMOS written by Rui Paulo da Silva Martins and published by Springer Nature. This book was released on 2023-01-05 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a single-source reference to the state-of-the-art in analog and mixed-signal circuit design in nanoscale CMOS. Renowned authors from academia describe creative circuit solutions and techniques, in state-of-the-art designs, enabling readers to deal with today’s technology demands for high integration levels with a strong miniaturization capability.