Download or read book Mid infrared Type I Diode Laser Design Using Molecular Beam Epitaxy written by Scott Daniel Sifferman and published by . This book was released on 2020 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mid-infrared region of the electromagnetic spectrum, particularly in the wavelength range between 3 and 5 μm, is important for a number of applications in spectroscopy, gas sensing, infrared countermeasures, and communications. Despite these motivations, mid-infrared laser development has lagged behind that of visible and near-infrared technology. This is in part because semiconductor laser sources, while they exist across the mid-infrared, suffer from one or several drawbacks such as high power consumption, high threshold currents, low characteristic temperatures, limited wallplug efficiency, parasitic non-radiative recombination processes, or reduced carrier confinement. The latter impediment, specifically reduced carrier confinement of holes, is endemic to the active regions of GaSb-based type-I quantum-well diode lasers as the optical emission wavelength is extended past 3 μm. In this work, we present our efforts toward enhancing mid-infrared active regions to extend the emission wavelength of type-I emitters. Through the use of highly-strained, high indium-content quantum wells we demonstrate type-I diode laser operation from aluminum-free active regions up to 3.62 μm, and photoluminescence emission from type-I quantum wells out past 4 μm. Additional studies focused on the effect of using bismuth during the growth of these materials. While increased compressive strain in the quantum well alloy enables greater hole confinement at longer emission wavelengths, it also leads to material roughening and defect formation that restrict the number of and thickness of strained regions that can be grown before material quality irreparably degrades. We observed that by using bismuth as a surfactant during the growth of highly-strained GaIn(As)Sb alloys, material degradation was suppressed as these materials were grown well beyond classical critical thickness limits. We were also able to leverage the epitaxial growth conditions used for highly-strained, high indium-content quantum wells to incorporate dilute amounts of bismuth, up to 3%, into the quantum well materials. The addition of bismuth to the quantum well alloys modifies the valence band to provide additional hole confinement, leading to brighter emitters with up to 34% higher peak intensity. It also resulted in overall lower materials strain without reducing the emission wavelength or performance. This opens a promising approach to overcome strain-related limitations to laser performance and emission wavelength, allowing for device designs with increased numbers of quantum wells and potentially reducing the effects of gain saturation. An additional path toward improved mid-infrared devices is to switch the quantum well barrier material from GaSb to a lattice-matched AlGaAsSb alloy. This is the same strategy employed for many other mid-infrared type-I diode lasers, albeit for emission wavelengths less than 3.1 μm. By changing the barrier alloy, the quantum well valence band offset is increased, providing stronger hole confinement. Coupling these barriers with the highly-strained, high indium-content quantum wells results in a 3× improvement in peak photoluminescence and a >30% reduction in emission linewidth for quantum wells operating up to 4.2 μm. Using this coupled approach, we propose a laser diode device designed to operate at 4.1 μm
Download or read book MBE Growth of GaSb based Alloys for Mid infrared Semiconductor Diode Lasers written by Hari Parameswaran Nair and published by . This book was released on 2013 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared lasers in the 3-5 [mu]m range are important for wide variety of applications including trace gas sensing, infrared counter measures, free space optical communications, etc. GaSb-based type-I quantum well (QW) diode lasers are an attractive choice due to their relatively simple design and growth tolerances, as compared with quantum cascade lasers and interband cascade lasers. Excellent diode lasers have been demonstrated for wavelengths up to ~3.0 [mu]m, employing GaInAsSb/AlGaAsSb QW active regions. But, device performance tends to degrade at longer wavelengths, due to Auger recombination and decreasing QW valence band offsets. In this work we look into the feasibility of using highly strained GaInAsSb/GaSb QWs as active regions for diode lasers operating at wavelengths beyond 3.0 mu]m. Heavy strain in the QW can improve valence band offset and also increase the splitting between the heavy and light hole bands which can help minimize Auger recombination. Through optimized molecular beam epitaxy (MBE) growth conditions we were able to incorporate up to 2.45 % compressive strain in these QWs enabling laser operation up to 3.4 [mu]m at room temperature. An alternate path to extend the emission wavelength is to incorporate dilute quantities of nitrogen into the QW. Incorporating dilute quantities of substitutional nitrogen into traditional III-V's strongly reduces the bandgap of the alloy. The advantage for the case of GaSb based dilute-nitrides is that the bandgap reduction is almost exclusively due to the lowering of the conduction band leaving the valence band offsets unaffected; thus providing a path to mitigating hole leakage while extending the emission wavelength. Although GaSb-based dilute-nitrides are a potentially elegant solution for extending the operating wavelength of GaSb-based type-I QW diode lasers, the luminescence efficiency of this material system has been relatively poor. This is most likely due to the presence of a high concentration of point defects, like nitrogen substitutional clusters. Through careful optimization of MBE growth conditions and post growth annealing, we demonstrate improved luminescence efficiency. With further optimization this material system can potentially extend the emission wavelength of GaSb-based type-I QW diode lasers even further into the mid-infrared spectrum.
Download or read book Solid State Mid Infrared Laser Sources written by Irina T. Sorokina and published by Springer Science & Business Media. This book was released on 2003-07-10 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book describes the most advanced techniques for generating coherent light in the mid-infrared region of the spectrum. These techniques represent diverse areas of photonics and include heterojunction semiconductor lasers, quantum cascade lasers, tunable crystalline lasers, fiber lasers, Raman lasers, and optical parametric laser sources. Offering authoritative reviews by internationally recognized experts, the book provides a wealth of information on the essential principles and methods of the generation of coherent mid-infrared light and on some of its applications. The instructive nature of the book makes it an excellent text for physicists and practicing engineers who want to use mid-infrared laser sources in spectroscopy, medicine, remote sensing and other fields, and for researchers in various disciplines requiring a broad introduction to the subject.
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Band Structure Engineering of the Carrier Induced Refractive Index in High Power Midwave Infrared Laser Diodes written by and published by . This book was released on 2000 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program was aimed at developing the understanding of advanced type-II antimonides heterostructures required to realize high-power, room-temperature, diode lasers. The program incorporated elements of theory, semiconductor growth by molecular beam epitaxy, ultrafast and continuous-wave optical characterization, and device processing, fabrication, and testing. Accomplishments include: 1) development of a highly-accurate 14-band k-dot-p band structure model and its application to calculations of Auger and radioactive recombination, gain and index spectra, and carrier transport, and to mid-infrared laser design, 2) measurements of Auger recombination, carrier transport, and gain and refractive index spectra in mid-infrared laser structures, 3) development of figures of merit for designing mid-infrared lasers, 4) design, growth, and characterization of optimized multiconstituent antimonides quantum wells for 3.5 micron lasers, and 5) the theoretical and experimental demonstration of superior Auger suppression in this structure.
Download or read book Mid infrared Optoelectronics written by Eric Tournié and published by Woodhead Publishing. This book was released on 2019-10-19 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
Download or read book State of the Art Program on Compound Semiconductors XL SOTAPOCS XL and Narrow Bandgap Optoelectronic Materials and Devices II written by D. N. Buckley and published by The Electrochemical Society. This book was released on 2004 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Download or read book Mid infrared Semiconductor Optoelectronics written by Anthony Krier and published by Springer. This book was released on 2007-05-22 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Download or read book Asymmetric Hybrid A1 Ga SbAs InAs Cd Mg Se Heterostructures for Mid IR LEDS and Lasers written by S. V. Ivanov and published by . This book was released on 2002 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a mid-infrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy (MBE) and exhibited an intense long-wavelength electroluminescence at 3.12 micrometers (300 K). A II-VI MBE growth initiation with a thin ZnTe buffer layer prior to the CdMgSe deposition results in a dramatic reduction of defect density originating at the II-VI/III-V interface, as demonstrated by transmission electron microscopy. A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as delta E(sub c) = 1.28 eV and delta E(sub v) ^ 1.6 eV. An increase in the pumping current results in a super-linear raising the EL intensity. The type of band line up at the coherent InAs/Cd(1-x)Mg(x)Se interface is discussed for 0
Download or read book Handbook of Laser Technology and Applications Laser design and laser systems written by Colin E. Webb and published by CRC Press. This book was released on 2004 with total page 1282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book EMC 2008 written by Silvia Richter and published by Springer Science & Business Media. This book was released on 2008-09-20 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the14th European Microscopy Congress, held in Aachen, Germany, 1-5 September 2008. Jointly organised by the European Microscopy Society (EMS), the German Society for Electron Microscopy (DGE) and the local microscopists from RWTH Aachen University and the Research Centre Jülich, the congress brings together scientists from Europe and from all over the world. The scientific programme covers all recent developments in the three major areas of instrumentation and methods, materials science and life science.
Download or read book Handbook of Laser Technology and Applications written by Colin Webb and published by CRC Press. This book was released on 2020-09-29 with total page 1266 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of the laser was one of the towering achievements of the twentieth century. At the opening of the twenty-first century we are witnessing the burgeoning of the myriad technical innovations to which that invention has led. The Handbook of Laser Technology and Applications is a practical and long-lasting reference source for scientists and engineers who work with lasers. The Handbook provides, a comprehensive guide to the current status of lasers and laser systems; it is accessible to science or engineering graduates needing no more than standard undergraduate knowledge of optics. Whilst being a self-contained reference work, the Handbook provides extensive references to contemporary work, and is a basis for studying the professional journal literature on the subject. It covers applications through detailed case studies, and is therefore well suited to readers who wish to use it to solve specific problems of their own. The first of the three volumes comprises an introduction to the basic scientific principles of lasers, laser beams and non-linear optics. The second volume describes the mechanisms and operating characteristics of specific types of laser including crystalline solid - state lasers, semiconductor diode lasers, fibre lasers, gas lasers, chemical lasers, dye lasers and many others as well as detailing the optical and electronic components which tailor the laser's performance and beam delivery systems. The third volume is devoted to case studies of applications in a wide range of subjects including materials processing, optical measurement techniques, medicine, telecommunications, data storage, spectroscopy, earth sciences and astronomy, and plasma fusion research. This vast compendium of knowledge on laser science and technology is the work of over 130 international experts, many of whom are recognised as the world leaders in their respective fields. Whether the reader is engaged in the science, technology, industrial or medical applications of lasers or is researching the subject as a manager or investor in technical enterprises they cannot fail to be informed and enlightened by the wide range of information the Handbook supplies.
Download or read book Handbook of Laser Technology and Applications written by Chunlei Guo and published by CRC Press. This book was released on 2021-06-23 with total page 711 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Disk Lasers written by Oleg G. Okhotnikov and published by John Wiley & Sons. This book was released on 2010-03-30 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely publication presents a review of the most recent developments in the field of Semiconductor Disk Lasers. Covering a wide range of key topics, such as operating principles, thermal management, nonlinear frequency conversion, semiconductor materials, short pulse generation, electrical pumping, and laser applications, the book provides readers with a comprehensive account of the fundamentals and latest advances in this rich and diverse field. In so doing, it brings together contributions from world experts at major collaborative research centers in Europe and the USA. Each chapter includes a tutorial style introduction to the selected topic suitable for postgraduate students and scientists with a basic background in optics - making it of interest to a wide range of scientists, researchers, engineers and physicists working and interested in this rapidly developing field. It will also serve as additional reading for students in the field.
