Download or read book Microstructure Study of Electroplated Copper Films for ULSI Metal Interconnections written by Haebum Lee and published by . This book was released on 2001 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Download or read book Interconnect and Contact Metallization for ULSI written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.
Download or read book Room Temperature Evolution of Microstructure and Resistivity in Electroplated Copper Films written by International Business Machines Corporation. Research Division and published by . This book was released on 1998 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "We demonstrate that at room temperature (21 C̊), electroplated Cu films undergo microstructural changes which are manifested by a large decrease in resistivity. The electroplated, 1 [mu]m thick films were monitored in situ using resistance and stress analysis and ex situ using focused ion beam (FIB), theta-theta x-ray diffraction (XRD) and pole figure analysis. The films, while held at 21 C̊, undergo a 20 to 25% decrease in resistivity and a decrease in compressive stress to near zero values. The resistance and stress changes are driven by complete recrystallization of the film where grains grow in size by over an order of magnitude. The recrystallization leads to a microstructure which has a stronger Cu(111) fiber texture. The effective activation energy for the process was calculated using the Kissinger analysis method applied to plots of in situ resistance as a function of temperature with varied heating ramp rates. The processes involved in the evolution of the new microstructure in the electroplated Cu films have an effective activation energy of 0.92 [+ or -] 0.04 eV, which is consistent with grain boundary diffusion as the dominant mechanism."
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Download or read book Room Temperature Evolution of Microstructure and Resistivity in Electroplated Copper Films written by C. Cabral and published by . This book was released on 1998 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrochemical Processing in ULSI Fabrication and Semiconductor metal Deposition II written by Panayotis C. Andricacos and published by The Electrochemical Society. This book was released on 1999 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Film Microstructure and Line Geometry on the Reliability of Passivated Copper Interconnects written by Julie Ann Nucci and published by . This book was released on 1996 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Metallization Conference 1999 AMC 1999 Volume 15 written by Mihal E. Gross and published by Mrs Conference Proceedings. This book was released on 2000 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Evolving Microstructure written by and published by . This book was released on 1996 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on a collective body of work wherein we have studied the mass transport phenomena which are likely to be operative during stress driven changes in microstructure arising from electromigration and stress voiding. Our goal is to understand such microstructural evolution leading to failure of the metal lines or interconnects associated with integrated electronic circuits or chips. This work, when complete, will lead to improved electronics performance and reliability and faster product development arising from accurate and predictive models of wearout phenomena. We report on the role of thermal induced strain leading to hole and hillock formation, the influence of grains structure on the reliability of Al- based interconnects, and the observation of counter-current electromigration of Ua in Al grain boundaries.
Download or read book Microstructure and Texture of Electroplated Copper Films and Damascene Lines written by Tejodher Muppidi and published by . This book was released on 2003 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Copper Electroplating for ULSI Interconnection written by and published by . This book was released on 1999 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Learning Through Movement written by and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
