Download or read book Metallization and Metal Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Download or read book Metal semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Download or read book VLSI Metallization written by Krishna Shenai and published by Artech House Publishers. This book was released on 1991 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive collection of reprinted articles presents the most important developments on VLSI contact and interconnect technologies and applications. The book covers important developments in metallization of compound semiconductor technologies, and includes a section on metallization reliability and high speed testing.
Download or read book The Structure and Properties of Metal semiconductor Interfaces written by L. J. Brillson and published by . This book was released on 1982 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metallization written by S. P. Murarka and published by Butterworth-Heinemann. This book was released on 1993 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
Download or read book Electronic States at Metal Semiconductor Interfaces written by G. Hughes and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Engineering of Metal semiconductor Interfaces written by Liangjin Chen and published by . This book was released on 2000 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural Chemical and Electrical Characterization of Metal semiconductor Interfaces written by Ilija Milija Vitomirov and published by . This book was released on 1989 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Some Metal semiconductor Interfaces written by Colette Maani and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Interfaces Microstructures and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 1993-01-01 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Download or read book The ellipsometric characterization of metal semiconductor interfaces written by Shiuh Chao and published by . This book was released on 1981 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure of Metal semiconductor Interfaces written by Jason Charlesworth and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book VLSI Metallization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Download or read book Growth and Structure at Metal semiconductor Interfaces written by Neil Jonathan Curson and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation Of Semiconductor Interfaces Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Download or read book Interfaces of Electrical Contacts in Organic Semiconductor Devices written by Korhan Demirkan and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5,2'-ethyl-hexyloxy-phenylene vinylene) (MEH-PPV), polystyrene (PS) and ozone treated polystyrene (PS-O3) surfaces by thermal deposition of aluminum. Photoelectron spectroscopy showed the degree of chemical interaction between Al and each polymer, for MEH-PPV, the chemical interactions were mainly through the C-O present in the side chain of the polymer structure. The chemical interaction of Al with polystyrene was less significant, but it showed a dramatic increase after ozone treatment of the polystyrene surface (due to the formation of exposed oxygen sites). Formation of metal oxide and metal-organic compound is detected during the Al metallization of MEH-PPV and ozone-treated PS surfaces. Our results showed that the condensation of Al on polymer surfaces is highly dependent on surface reactivity. Enormous differences were observed for the condensation coefficient of Al on PS and PS-O3 surfaces. For the inert PS surface, results showed that Al atoms poorly wet the polymer surface and form distributed clusters at the surface. Results on reactive polymer surfaces suggest morphology reminiscent of a Stranski- Krastanov-type growth and high contact area. Many studies have shown that the insertion of a thin interlayer of the oxide or fluoride of alkali or alkaline metals between the low work function electrode and the organic semiconductor layers dramatically lowers the onset voltage and increases the efficiency compared to identical devices without the insulating layer. Various modes have been suggested for the mechanism of device performance enhancement. We have investigated the chemical and electrical interaction of (i) LiF with MEH-PPV, (ii) Al with MEH-PPV in the presence of a thin LiF layer at the interface, and finally (iii) the interaction of Al with LiF. AFM and XPS data showed that LiF forms island on the surface. Our data in agreement with various existing models suggested the (i) alteration in the electronic properties under applied bias, (ii) doping of the organic semiconductor, (iii) formation of metal alloy (Au-Li). In addition to the possible electrical modifications at the interface suggested previously, our data also suggest a change in the film growth on LiF modified surfaces.
