Download or read book Modeling of Vertical Double Diffused Metal Oxide Semiconductor VDMOS Transistors Including High Frequency Effects Using Computer aided Design Tools written by Isaac Vinod Kumar Jacob and published by . This book was released on 1993 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of Nanoscale Vertical Impact Ionization Metal Oxide Semiconductor Field Effect Transistor mosfet for Short Channel Effect Control written by Muhammad Aiman Md. Shariff and published by . This book was released on 2011 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterizing the Channel Interface Properties of Vertical Double diffused Metal oxide Semiconductor DMOS with Charge Pumping Method written by Mohd Hanif Kamaruddin and published by . This book was released on 2014 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Subject Headings written by Library of Congress and published by . This book was released on 2013 with total page 1160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Subject Headings written by Library of Congress. Cataloging Policy and Support Office and published by . This book was released on 2009 with total page 1924 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book P Z written by Library of Congress. Office for Subject Cataloging Policy and published by . This book was released on 1990 with total page 1644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Subject Headings written by Library of Congress. Office for Subject Cataloging Policy and published by . This book was released on 1991 with total page 1698 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Subject Headings F O written by Library of Congress. Subject Cataloging Division and published by . This book was released on 1988 with total page 1452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of Semiconductor Devices written by Rajendra Singh and published by Springer Nature. This book was released on with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Subject Headings P Z written by Library of Congress. Subject Cataloging Division and published by . This book was released on 1988 with total page 1436 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book F O written by Library of Congress. Office for Subject Cataloging Policy and published by . This book was released on 1990 with total page 1636 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of 1700 V 4H SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistors Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China Under Grant No 2013ZX02305 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-17 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Download or read book Total Ionizing Dose Effects in Power Vertical Double diffused Metal oxide semiconductor Field Effect Transistors written by Mun-Soo Park and published by . This book was released on 2004 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Oxide Semiconductors written by Zhigang Zang and published by John Wiley & Sons. This book was released on 2023-12-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.

Download or read book A Study of Vertical Channel Metal Oxide Semiconductor Field Effect Transistor MOSFET Using Fillet Local Oxidation FILOX written by Yi Tong and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.