Download or read book Metal Organic Chemical Vapor Depostion MOCVD of Gallium Arsenide written by Devesh Kapur and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition MOCVD of GaAs Using Organometallic Arsenic Precursors written by Thomas Robert Omstead and published by . This book was released on 1989 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The metal organic chemical vapor deposition of gallium arsenide thin films on silicon and gallium arsenide substrates written by Christopher Thomas and published by . This book was released on 1981 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Area Epitaxy of Gallium Arsenide on Silicon Phase 1 written by and published by . This book was released on 1989 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program was to investigate selective-area epitaxy of Gallium Arsenide-on-Silicon by Metal Organic Chemical Vapor Deposition (MOCVD) as a means of reducing the thermal expansion mismatch effects, hence, improving the deposited film quality, wafer bow, and eliminating film cracking. This has been achieved by MOCVD of GaAs through openings patterned in the silicon dioxide coated wafers. The object of this research program was to develop the technology that will yield device quality GaAs-on-Si and a process applicable for monolithic integration of the high speed and/or optical communication capabilities of GaAs with the sophistication of the Si VLSI technology. The feasibility of this approach has been clearly demonstrated in the Phase I research effort, in which successful selective deposition of GaAs films on patterned Si wafers was achieved and the deposited films were characterized by a number of techniques. Preliminary results clearly indicate the effectiveness of this approach to eliminate wafer bow, minimize film cracking, and improve the quality of the heteroepitaxial films. A new deposition technique for GaAs-on-Si by Atomic Layer Epitaxy (ALE) has been introduced which has the potential of producing superior quality GaAs-on-Si films. Keyword: Semiconductors.

Download or read book The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition written by Nicholas G. Minutillo and published by . This book was released on 2014 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires hold a wealth of promise for studying the fundamental physics of electron behavior and interactions in a quasi-one dimensional environment and as components in or the foundation of technological advancement in electronic and spintronic devices. Especially in the case of spintronic applications, the crystalline environment must be highly controlled. Spintronic devices often depend on relative phases of spin states which are easily lost in an environment with high scattering probabilities. In any material system, control of the fabrication is the limiting factor to achieving the theoretical characteristics and operation. Bottom-up synthesis of semiconductor nanowires has yet to reach the level of control required for use as a base system in research. Material synthesis that meets the criteria for advanced applications remains a bottle neck in advancing the application of GaAs or any other semiconductor nanowires. We discuss the vapor-liquid-solid (VLS) mechanism and the growth of gallium arsenide and other III-V semiconductors. This mechanism has become a foundation of bottom-up nanowire growth, the physics of which remains the subject of ongoing research. We also discuss metal organic chemical vapor deposition (MOCVD), an epitaxial technique for III-V semiconductor thin films that is prominent in semiconductor nanowire growth.

Download or read book Low Pressure Metalorganic Chemical Vapor Deposition MOCVD of Ga0 5In0 5P GaAs written by KaiCheng Chou and published by . This book was released on 1993 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Organic Chemical Vapor Deposition of 111 v Compounds on Silicon written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Download or read book A Computational Model of the Metalorganic Chemical Vapor Deposition of Gallium Arsenide written by Rena Michelle Zurn and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal organic Chemical Vapor Deposition in Gaas Semiconductor Fabrication written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition of Gallium Arsenide aluminum Gallium Arsenide Thin layer Superlattices and Laser Structures written by Gregory Costrini and published by . This book was released on 1986 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book The Selective Deposition of Gallium Arsenide and Aluminum Gallium Arsenide by Laser enhanced Metalorganic Chemical Vapor Deposition written by James Howard Edgar and published by . This book was released on 1987 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition of Gallium Arsenide aluminum Gallium Arsenide Thin Layer Superlattices Andlaser Structures written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Residual Impurity Incorporation in the Growth of High Purity Gallium Arsenide by Metalorganic Chemical Vapor Deposition written by Andrew Dean Reed and published by . This book was released on 1988 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.