Download or read book Metal Contacts to GaN and Its Alloys with AIN written by Ryan Matthew France and published by . This book was released on 2006 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Contacts on ZnSe and GaN written by Kristen Joy Duxstad and published by . This book was released on 1997 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Contacts to P type Gallium Nitride written by Sujit Pillai and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN AIN InN and Their Alloys written by and published by . This book was released on 2004 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Photonics written by Mool C. Gupta and published by CRC Press. This book was released on 1997-05-05 with total page 842 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly growing area of photonics plays a critical role in many segments of industry, such as optical communications, information storage, electronic display, and other areas, and is the subject of intense academic and industrial research. The Handbook of Photonics serves as a single-source reference book for this exciting field. The book is divided into three sections: Photonic Materials Photonic Devices and Optics Photonic Systems Each chapter within these sections is written by well-known and respected authors and covers the latest information in many of the important aspects of photonics. The Handbook of Photonics provides a complete reference for scientists, engineers, and students working in this field.
Download or read book An Analysis of Metal Contacts to GaN written by William Patrick Lewis and published by . This book was released on 2007 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic and Schottky contacts to GaN on sapphire and free standing GaN are investigated. A detailed analysis of the circular Transmission Line Mea-surement (c-TLM) technique is carried out. We show the need to accurately measure the contact radii to extract accurate contact resistivity values, _c using c-TLM, for contacts to p-type GaN. Small measurement errors, _ 0.5 _m, lead to large errors in _c, especially as _c decreases. An alternative technique to extract _c, based on the series resistance of a p-n diode, is investigated. This method relies on uniform current density over the whole metal{semiconductor diode contact and the existence of a singular diode ideality. Defects in p-type GaN on LED material are shown to electroplate preferentially. Ni plated defects annealed in an O2 atmosphere are shown to be passivated, with signi_cant measured improvements in the I{V and L{I char- acteristics of LEDs. Electroless deposition is explored as an alternative contact formation technique. This novel approach yields Ni/Au, p-type ohmic contacts, with a _c comparable with evaporated contacts. A _c of 2.2 x 10_2 cm_2 at room temperature and a _c of 2.5 x 10_2 cm_2 at 410 K indicate the tunneling nature of the contact. The method provides for a reduction in the cost and processing time associated with ohmic contact formation. CoW contacts to n-type GaN are shown to be rectifying even after a 6500C anneal. KOH etching of Ga-face, freestanding, n-type, GaN, is shown to aid ohmic contact formation and remove the need for a high temperature anneal. Schottky contacts were optimised on low doped epi-layers, on free standing n-GaN substrates. The contacts are governed by thermionic emission, with low ideality, 1.04 and low on-state resistance, 0.57 mcm2. The idealities of the devices are shown to decrease with increasing temperature, while the barrier heights remain relatively constant. KOH treatments of the material were shown to increase the Schottky barrier height and reduce reverse leakage currents.
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book III V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth Delivers a methodical technical presentation in over 1500 pages Includes 50+ contributions prepared by leading experts Offers practical support and guidance with detailed examples and applications for lab and field experimentation Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles Features new chapter level templates and a narrative progression to facilitate understanding
Download or read book GaN and Related Alloys 2003 Volume 798 written by Hock Min Ng and published by . This book was released on 2004-04-09 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Download or read book The Development and Characterization of Metal Contacts to P GaN written by David Jonathan King and published by . This book was released on 1998 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors written by and published by . This book was released on 2007 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
