Download or read book Mechanistic Study of Plasma Damage to Porous Low k written by Hualiang Shi and published by . This book was released on 2010 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O2 plasma, and increasing N2 addition in CO2/N2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

Download or read book Plasma Damaging Process of Porous Ultra low k Dielectrics and Dielectric Repair written by Huai Huang (Ph. D.) and published by . This book was released on 2012 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the on-chip interconnects was impeded by the plasma induced damage during etching and photoresist stripping processes. This dissertation aims to study the mechanism of plasma damage to porous ultra-low-k dielectrics with the objective to minimize the damage and to develop methods and processes to restore the low-k dielectric after the plasma damage. First, the plasma etching induced surface roughening was studied on blanket porous SiCOH films in the fluorocarbon based plasma. Substantial surface roughening was found in the low polymerization region, where the surface roughening process was initiated by the unevenly distribution of surface fluorocarbon polymers in the pore structure and enhanced by ion induced surface densification. With oxygen addition, the surface densification layer increased the radial diffusion rate difference between the top and the bottom of the pits, resulting in further increase of the surface roughness. The best process optimization was found at a "threshold point" where the surface polymerization level is just high enough to suppress the roughness initiation. The second part of this dissertation investigates the mechanism of the oxygen plasma damaging process. The roles of plasma constituents (i.e. ions, radicals and photons with different wavelengths) were differentiated by an on-wafer filter system. Oxygen radical was identified as the most critical and its damage effect was enhanced by photons with wavelength smaller than 185nm. The oxygen radical kinetics in the porous structure of low-k, including diffusion, reaction and recombination, was described analytically with a plasma altered layer model and then simulated with a Monte Carlo computational method, which give guidelines to minimize the damage. The analytical model of oxygen radical kinetic process is also used to investigate the oxygen plasma damage to patterned low-k structure, which is confirmed by experiments. Finally, the dielectric recovery was studied using silylation and UV broadband thermal treatment, both individually and in combination. After both vapor and supercritical CO2 silylation, surface carbon and hydrophobicity were partially recovered. However, the recovery effect was limited to the surface. In comparison, UV treatment can effectively remove water from the bulk of the damaged film and consolidate the silanol bonds with the help of thermal activation. The combination of UV and silylation treatments is more effectively for dielectric recovery than UV or silylation alone. The "UV first" treatment provided a better recovery in sequential processes. Under the same conditions, simultaneous treatments by silylation and UV irradiation achieved better bulk and surface recovery than the sequential process.

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Download or read book Interactions of Plasma Generated Species on Porous Dielectric Thin Films written by Joe Lee and published by . This book was released on 2013 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low pressure plasma processing is used extensively in the semiconductor industry for modern technology. As a result, the understanding of plasma/material interactions is very important to the improvement and design of materials and treatment methods. This dissertation focuses on the understanding of interactions between individual plasma species and materials that are used in the fabrication of the interconnect in semiconductor devices, namely porous low-k dielectrics. Proper insulation of the metal lines in the interconnect relies on maintaining the integrity of the insulator's dielectric properties. As the features of the interconnect are shifting to smaller dimensions, techniques used to implement lower dielectric permittivity have also lowered the material's resistance to plasma-induced damage. As a result, plasma processing of these materials have become a major challenge for future advances in interconnect technology. This study examines specific species generated from typical plasma discharges and their effect on porous low-k materials. The first part of this dissertation studies the mechanism for photon-induced effects and demonstrates the influence of emission wavelength on carbon removal from carbon-doped oxide films. VUV photons emitted from the plasma were observed to break Si-C bonds. However, oxidizing gas species must be present in the background to cause carbon removal. Depending on gas chemistry, VUV photons of different wavelengths are emitted, which affects the depth of the damage penetration into the film. Shorter wavelength emissions are absorbed by the SiO2-like damage layer that is produced after carbon extraction, thereby preventing further removal of carbon. The dissertation continues by examining the effects of photons and radicals individually by isolating the species to obtain separate exposures. By doing so, radicals and photons generated from O2 plasma were observed to remove carbon in different ways, creating different carbon profiles as a function of depth. 130 nm wavelength photons are fairly transparent through the material, leading to a gradual removal of carbon throughout the modification depth. In contrast, oxygen radicals are diffusion-limited, leading to removal of carbon occurring as a front. Modeling of damage effects by these species was performed in each case, and good predictions of their behavior were obtained. However, direct plasma exposures were observed to behave differently, exhibiting much less carbon removal than predicted by the model. Further experimentation found evidence that synergy between photon and radical species led to an effective decrease in the diffusivity of the modified material, reducing subsequent plasma damage. Through fundamental study of plasma/material interactions, the role of photons and radicals in plasma-induced damage has been determined. As a result, treatment methods to reduce plasma damage based on inhibiting these species can be designed. These include plasma filtration techniques, densification by ion bombardment, and the use of plasmas with reducing chemistries. While the scope of this research has focused on interactions with dielectric thin films, these approaches to plasma interactions are relevant to other processes that rely on plasma processing.

Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Download or read book 3D Microelectronic Packaging written by Yan Li and published by Springer Nature. This book was released on 2020-11-23 with total page 629 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging. It provides readers an in-depth understanding of the latest research and development findings regarding this key industry trend, including TSV, die processing, micro-bumps for LMI and MMI, direct bonding and advanced materials, as well as quality, reliability, fault isolation, and failure analysis for 3D microelectronic packages. Images, tables, and didactic schematics are used to illustrate and elaborate on the concepts discussed. Readers will gain a general grasp of 3D packaging, quality and reliability concerns, and common causes of failure, and will be introduced to developing areas and remaining gaps in 3D packaging that can help inspire future research and development.

Download or read book Developments in Surface Contamination and Cleaning Applications of Cleaning Techniques written by Rajiv Kohli and published by Elsevier. This book was released on 2018-11-27 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques, Volume Eleven, part of the Developments in Surface Contamination and Cleaning series, provides a guide to recent advances in the application of cleaning techniques for the removal of surface contamination in various industries, such as aerospace, automotive, biomedical, defense, energy, manufacturing, microelectronics, optics and xerography. The material in this new edition compiles cleaning applications into one easy reference that has been fully updated to incorporate new applications and techniques. Taken as a whole, the series forms a unique reference for professionals and academics working in the area of surface contamination and cleaning. Presents the latest reviewed technical information on precision cleaning applications as written by established experts in the field Provides a single source on the applications of innovative precision cleaning techniques for a wide variety of industries Serves as a guide to the selection of precision cleaning techniques for specific applications

Download or read book Dielectric Breakdown in Gigascale Electronics written by Juan Pablo Borja and published by Springer. This book was released on 2016-09-16 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry

Download or read book Plasma Damage on Low k Dielectric Materials written by Yi-Lung Cheng and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for low-k dielectric materials. This is called ,Äúplasma damage,Äù on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

Download or read book Plasma Science and Technology written by Haikel Jelassi and published by BoD – Books on Demand. This book was released on 2019-02-27 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Usually called the "fourth state of matter," plasmas make up more than 99% of known material. In usual terminology, this term generally refers to partially or totally ionized gas and covers a large number of topics with very different characteristics and behaviors. Over the last few decades, the physics and engineering of plasmas was experiencing a renewed interest, essentially born of a series of important applications such as thin-layer deposition, surface treatment, isotopic separation, integrated circuit etchings, medicine, etc. Plasma Science

Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Download or read book Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect written by Jie Cheng and published by Springer. This book was released on 2017-09-06 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Download or read book ISTFA 2013 written by A. S. M. International and published by ASM International. This book was released on 2013-01-01 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume features the latest research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detect, understand, and eliminate electronic device and system failures.

Download or read book Issues in Specialized Chemical and Chemistry Topics 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 1316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Specialized Chemical and Chemistry Topics: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Specialized Chemical and Chemistry Topics. The editors have built Issues in Specialized Chemical and Chemistry Topics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Specialized Chemical and Chemistry Topics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Specialized Chemical and Chemistry Topics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Stress Induced Phenomena in Metallization written by Shinichi Ogawa and published by American Institute of Physics. This book was released on 2007-11-13 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Kyoto, Japan, 4-7 April 2007