Download or read book Mechanism of Valence Band Discontinuity Control at Heterojunction Interfaces written by David Winslow Niles and published by . This book was released on 1988 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heterojunction Band Discontinuities written by Federico Capasso and published by North Holland. This book was released on 1987 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Now also available in paperback is a work which provides the first comprehensive overview of the results obtained after the 1970s. A thorough description is given of the properties of semiconductor heterojunctions, and their applications in novel devices. Particular emphasis is given to the interface band discontinuities. Written by top experts in the field this book will be welcomed by engineers, physicists and students interested in modern microelectronics.
Download or read book Theoretical and Experimental Investigation of Heterojunction Interfaces written by E. A. Kraut and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction energy-band discontinuities afford the device designer additional control over electron and hole transport near p-n junctions. Heterojunctions have been employed to realize new types of solid-state electron devices with properties not available from homojunction based technology. We have developed an experimental technique, based on the use of x-ray photoelectron spectroscopy (XPS), that enables us to measure band offsets to a precision of + or - 0.04 eV and to measure changes in band offsets to a precision of + or -0.01 eV. With the aid of this powerful experimental approach, we have been able to uncover much new heterojunction physics including crystallographic orientation dependence of band offsets, growth sequence variation, nontransitivity and time dependent shifts in band offsets.
Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Download or read book Surfaces and Interfaces Physics and Electronics written by R.S. Bauer and published by Elsevier. This book was released on 2012-12-02 with total page 663 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
Download or read book 1997 Advanced Workshop on Frontiers in Electronics written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1997 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text presents advances in the frontiers of electronic device and circuit research and development. It also discusses low-paper digital electronics, microwave power circuits and optoelectronics.
Download or read book Materials Interfaces written by D. Wolf and published by Springer Science & Business Media. This book was released on 1992-10-31 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: Many of the most important properties of materials in high-technology applications are strongly influenced or even controlled by the presence of solid interfaces. In this work, leading international authorities review the broad range of subjects in this field focusing on the atomic level properties of solid interfaces.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the 13th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces 28 30 January 1986 Pasadena Convention Center and the Holiday Inn Pasadena California written by Robert S. Bauer and published by . This book was released on 1986 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1982 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 1252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide band gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
