Download or read book Measurement of Transistor Hybrid Parameters as a Function of Frequency written by J. B. Oakes and published by . This book was released on 1954 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reasonably accurate measurements of the h parameters for junction transistors can be made up to frequencies of several megacycles if precautions are taken to reduce stray capacity and circuit noise. With the information thus obtained, analytic expressions for the h parameters can be found which will allow the accurate design of high frequency transistor circuits. (Author).
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Measurement of Transistor High frequency Hybrid pi Parameters written by David G. Sant and published by . This book was released on 1963 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government wide Index to Federal Research Development Reports written by and published by . This book was released on 1967-10 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Methods of Measurement for Semiconductor Materials Process Control and Devices written by United States. National Bureau of Standards and published by . This book was released on 1972 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Dynamic Method for Measuring the Low Frequency Hybrid Parameters of Junction Transistors written by J. F Jenkins (Jr) and published by . This book was released on 1954 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: Theory; Design of the dynamic h meter; Construction of the dynamic h meter; Specific operating instructions; Other uses.
Download or read book Solid State Physics Solid State Device And Electronics written by C M Kachhava and published by New Age International. This book was released on 2003 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Book Is Designed To Cater The Need Of Students Of B.Sc. (Pass And Hons.) Students Of Various Indian Universities On The Basis Of Model Curriculum Recently Proposed By Cdc Of Ugc. The Book Comprises 569 Figures, 266 Examples, 233 Problems And 336 Objective Questions, Distributed In 13 Chapters. Each Problem Is Followed By Its Answer.The Inclusion Of A Large Number Of Problems And Review Questions Are Aimed At Evaluating The Degree Of Conceptual Comprehension A Student Has Acquired As A Result Of Studying The Book. The Solved Examples Are Targetted To Illustrate The Theoretical Ideals Described In The Text.Although The Book Is Aimed To Target B.Sc. Students, Yet Chemists, Material Scientists And Electrical Engineers Would Find It Useful Not Only In Persuing Their Studies, But Also In Professional Applications.The Existence Of Sufficient Number Of Objective Questions Are Framed To Help The Student Immensely To Encounter Competitive Examinations Like Net, Slet, Ics And State Civil Services.
Download or read book NBS Technical Note written by and published by . This book was released on 1972 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Applications of Transistors written by J. P. Vasseur and published by Elsevier. This book was released on 2016-06-06 with total page 473 pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.
Download or read book A Time Domain Method of Measuring Transistor Parameters for Complete Small Signal Characterization Up to 1 Gc written by Frank Richard Davis and published by . This book was released on 1965 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes a method of measuring transistor small signal parameters over a wide frequency range using time domain techniques. A sampling oscilloscope and tunnel diode pulse generator are used to obtain five times response curves from the transistor which is inserted into a 50 ohm coaxial air-dielectric transmission line. A digital computer is used to perform frequency spectrum analysis on the curves, and to calculate the open and short circuit parameters for complete characterization of the transistor. The hybrid parameters of an RC network and three transistors were measured and compared with measurements made in the frequency domain. Good agreement was obtained between methods up to 500 Mc with reduced accuracy to 1 Gc. (Author).
Download or read book High frequency Circuit Engineering written by Ferdinand Nibler and published by IET. This book was released on 1996 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a translation originally published by Expert-Verlag and Technical Academy of Esslingen and based on courses taught there, eight German engineers discuss the theory and practice of radio-frequency engineering in the field of wireless communications. Focusing on computer supported problem solving, the authors discuss network parameters, CAD programs, noise measurement, and transistor circuits. The text is illustrated by sample calculations and design examples to illustrate techniques. Lacks a bibliography. Annotation copyright by Book News, Inc., Portland, OR
Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Download or read book RF and Time domain Techniques for Evaluating Novel Semiconductor Transistors written by Keith A. Jenkins and published by Springer Nature. This book was released on 2021-12-15 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
Download or read book Nanomaterials Polymers and Devices written by E. S. W. Kong and published by John Wiley & Sons. This book was released on 2015-04-21 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an eclectic snapshot of the current state of the art and future implications of the field, Nanomaterials, Polymers, and Devices: Materials Functionalization and Device Fabrication presents topics grouped into three categorical focuses: The synthesis, mechanism and functionalization of nanomaterials, such as carbon nanotubes, graphene, silica, and quantum dots Various functional devices which properties and structures are tailored with emphasis on nanofabrication. Among discussed are light emitting diodes, nanophotonic, nano-optical, and photovoltaic devices Nanoelectronic devices, which include semiconductor, nanotube and nanowire-based electronics, single-walled carbon-nanotube based nanoelectronics, as well as thin-film transistors
Download or read book Common base Transistor Equivalent Circuits for Wideband Amplification written by Stanford University. Electronics Research Laboratory and published by . This book was released on 1955 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Some New High frequency Equivalent Circuits for Junction Transistors written by Robert Michael Scarlett and published by . This book was released on 1956 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Methods of Measurement for Semiconductor Materials Process Control and Devices written by W. Murray Bullis and published by . This book was released on 1972 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
