Download or read book Measurement of Charge Limit in a Strained Lattice GaAs Photocathode written by and published by . This book was released on 1993 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The SLAC Linear Collider (SLC) Polarized Electron Source (PES) photocathodes have shown a charge saturation when illuminated with a high intensity laser pulse. This charge limit in the cesium-activated GaAs crystal seems to be strongly dependent on its surface condition and on the incident light wavelength. Charge limit studies with highly polarized strained lattice GaAs materials are presented.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photodetectors and Power Meters written by and published by . This book was released on 1993 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polarization and Charge Limit Studies of Strained GaAs Photocathodes written by Pablo J. Saez and published by . This book was released on 1997 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polarization and Charge Limit Studies of Strained GaAs Photocathodes written by and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents studies on the polarization and charge limit behavior of electron beams produced by strained GaAs photocathodes. These photocathodes are the source of high-intensity, high-polarization electron beams used for a variety of high-energy physics experiments at the Stanford Linear Accelerator Center. Recent developments on P-type, biaxially-strained GaAs photocathodes have produced longitudinal polarization in excess of 80% while yielding beam intensities of (approximately) 2.5 A/cm2 at an operating voltage of 120 kV. The SLAC Gun Test Laboratory, which has a replica of the SLAC injector, was upgraded with a Mott polarimeter to study the polarization properties of photocathodes operating in a high-voltage DC gun. Both the maximum beam polarization and the maximum charge obtainable from these photocathodes have shown a strong dependence on the wavelength of illumination, on the doping concentration, and on the negative electron affinity levels. The experiments performed for this thesis included studying the effects of temperature, cesiation, quantum efficiency, and laser intensity on the polarization of high-intensity beams. It was found that, although low temperatures have been shown to reduce the spin relaxation rate in bulk semiconductors, they don't have a large impact on the polarization of thin photocathodes. It seems that the short active region in thin photocathodes does not allow spin relaxation mechanisms enough time to cause depolarization. Previous observations that lower QE areas on the photocathode yield higher polarization beams were confirmed. In addition, high-intensity, small-area laser pulses were shown to produce lower polarization beams. Based on these results, together with some findings in the existing literature, a new proposal for a high-intensity, high-polarization photocathode is given. It is hoped that the results of this thesis will promote further investigation on the properties of GaAs photocathodes.
Download or read book Experimental Studies of the Charge Limit Phenomenon in GaAs Photocathodes written by and published by . This book was released on 1993 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs photocathodes have been in use for generating high intensity polarized electron beams (up to a peak current of 6 A in 2 ns pulses) for the SLC high energy physics program. If the quantum efficiency (measured at low light intensities) of a GaAs photocathode is below a certain level, the maximum photoemitted charge is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this charge limit phenomenon in a variety of GaAs photocathodes. The effects of the quantum efficiency, excitation laser wavelength, and extraction electric field on the charge limit have been examined. The temporal behavior of the charge limit as manifested in both intrapulse and interpulse effects has also been studied. These results will be discussed in light of possible mechanisms.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1995 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Strained Superlattice Photocathodes for Polarized Electron Sources written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarized electrons have been essential for high-energy parity-violating experiments and measurements of the nucleon spin structure. The availability of a polarized electron beam was crucial to the success of the Stanford Linear Collider (SLC) in achieving a precise measurement of the electroweak mixing angle, and polarized electron beams will be required for all future linear colliders. Polarized electrons are readily produced by GaAs photocathode sources. When a circularly polarized laser beam tuned to the bandgap minimum is directed to the negative-electron-affinity (NEA) surface of a GaAs crystal, longitudinally polarized electrons are emitted into vacuum. The electron polarization is easily reversed by reversing the laser polarization. The important properties of these photocathodes for accelerator applications are: degree of polarization of the extracted beam; ability to extract sufficient charge to meet accelerator pulse-structure requirements; efficiency and stability of operation; and absence of any asymmetries in the beam properties (charge, position, energy, etc.) upon polarization reversal. The performance of GaAs photocathodes has improved significantly since they were first introduced in 1978 [1]. The theoretical maximum polarization of 50% for natural GaAs was first exceeded in 1991 using the lattice mismatch of a thin InGaAs layer epitaxially grown over a GaAs substrate to generate a strain in the former that broke the natural degeneracy between the heavy- and light-hole valence bands [2]. Polarizations as high as 78% were produced for the SLC from photocathodes based on a thin GaAs epilayer grown on GaAsP [3,4]. After 10 years of experience with many cathode samples at several laboratories [5], the maximum polarization using the GaAs/GaAsP single strained-layer cathode remained limited to 80%, while the quantum efficiency (QE) for a 100-nm epilayer is only 0.3% or less. Two factors were known to limit the polarization of these cathodes: (1) the limited band splitting; and (2) a relaxation of the strain in the epilayer since the 10-nm critical thickness for maintaining perfect strain is exceeded for a 1 % lattice-mismatch [6]. Strained superlattice structures, consisting of very thin quantum well layers alternating with lattice-mismatched barrier layers are excellent candidates for higher polarization. Due to the difference in the effective mass of the heavy- and light-holes, a superlattice exhibits a natural splitting of the valence band, which adds to the strain-induced splitting. In addition, each of the SL layers is thinner than the critical thickness. Polarized photoemission from strained InGaAs/GaAs [7], InGaAdAlGaAs [8], and GaAs/GaAsP [9,10] superlattice structures have been reported in the literature. For this Phase II program, SVT Associates worked with the Stanford Linear Accelerator Center (SLAC) and University of Wisconsin at Madison to create photocathodes with improved polarization by employing GaAs/GaAsP superlattices. These superlattices consist of alternating thin layers of GaAs and GaAsP. The thicknesses and alloy compositions are designed to create a strained GaAs photoemission layer. Under strain, the heavy-hole and light-hole valence bands in GaAs split, removing degeneracy and allowing high polarization, theoretically 100%. This final report discusses the efforts and results achieved, comparing the device performance of newly created superlattice photocathodes grown by molecular beam epitaxy (MBE) with the devices created by other fabrication technologies, and efforts to optimize and improve the device operation.
Download or read book JJAP written by and published by . This book was released on 1995 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Studies of the Charge Limit Phenomenon in NEA GaAs Photocathodes written by and published by . This book was released on 1994 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode's quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density.
Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2000-08-08 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Download or read book Surface Science Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.
Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1994 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Spin Physics written by Donald G. Crabb and published by American Inst. of Physics. This book was released on 2009-08-25 with total page 1236 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics covered in the conference ranged from the physics that can be done with polarized beams of particles (protons, electrons, gamma-rays, etc.) to the techniques and instrumentation necessary to achieve this. Topics included: nucleon structure measurements (from where does the spin of the proton and neutron come), the acceleration, storage and polarization of particle beams and the polarized targets and sources necessary for mounting the experiments.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Parity Violation In Electron Scattering Proceedings Of The Workshop written by E J Beise and published by World Scientific. This book was released on 1990-08-23 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings cover the recent progress and future directions of parity violation in electron scattering. Both experimental and theoretical issues are discussed, such as those of hadronic structure, radiative corrections, and tests of the standard model. There are three sessions, the first of which serves as a general overview of theory and experiment. The second session deals with the technical aspects of making a measurement of the parity violating asymmetry in electron scattering, including not only detector design but polarized electron beams and beam polarimeters.. The remaining session covers the corrections to lowest order parity violating cross sections.
