Download or read book Measurement and Modeling of 1 f Noise in MOSFET Devices with High kappa Material as the Gate Dielectric written by Tanvir Hasan Morshed and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new 1/f noise model has been developed for MOSFET devices with high-kappa gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-kappa dielectric was used. These devices were provided by Texas Instruments, having four different interfacial layer thicknesses with a stack composition of SiON/HfSiON. The dominant mechanism affecting the noise behavior of these devices was experimentally determined to be correlated number and mobility fluctuation. The impact of remote phonon scattering was investigated in the temperature range of 172K to 300K. It has been observed that the mobility characteristics of these devices were significantly affected by remote phonon scattering. However, the impact of remote phonon scattering was not observed on the flicker noise characteristics. The new model was developed in the frame work of the original Unified Model incorporating two distinct features that distinguish high-kappa gate stacks from SiO2. The new model considers energy and spatial dependence of trap distribution in the dielectric, thus generates a more realistic trap profile. Furthermore, it incorporates the multi layered structure of the gate stack by considering tunneling of carriers through a double step cascaded barrier. The newly developed model is accordingly called MSUN (Multi Stack Unified Noise) Model, named after the original Unified Model. MSUN Model has been successfully verified with data on MOSFETs having four different interfacial layer thicknesses, in the temperature range of 172K to 300K. The model predictions show very good agreement with data in the bias range of moderate to strong inversion. No specific impact due to nitridation was observed on these devices. The model has been successfully transformed into a compact form which is compatible with leading device simulation package used in the industry.
Download or read book 1 f Noise in Hafnium Based High k Gate Dielectric MOSFETs and a Review of Modeling written by Siva Prasad Devireddy and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For next generation MOSFETs, the constant field scaling rule dictates a reduction in the gate oxide thickness among other parameters. Consequently, gate leakage current becomes a serious issue with very thin SiO2 that is conventionally used as gate dielectric since it is the native oxide for Si substrate. This has driven an industry wide search for suitable alternate 'high-k' gate dielectric that has a high value of relative permittivity compared to SiO2 thereby presenting a physically thicker barrier for tunneling carriers while providing a high gate capacitance. Consequently, it is essential to study the properties of these novel materials and the interfaces that they form with the substrate, gate or other dielectrics in a multi-level stack. The main focus of this work is the 1/f noise that is specifically used as a characterization tool to evaluate the performance of high-k MOSFETs. Nevertheless, DC and split C-V characterization are done as well to obtain device performance parameters that are used in the noise analysis. At first, the room temperature 1/f noise characteristics are presented for n- and p-channel poly-Si gated MOSFETs with three different gate dielectrics- HfO2, Al2O3 (top layer)/HfO2 (bottom layer), HfAlOx. The devices had either 1 nm or 4 nm SiO2 interfacial layer, thus presenting an opportunity to understand the effects of interfacial layer thickness on noise and carrier mobility. In the initial study, the analysis of noise is done based on the Unified Flicker Noise Model. Next, a comparative study of 1/f noise behavior is presented for TaSiN (NMOS) and TiN (PMOS) gated MOSFETs with HfO2 gate dielectric and their poly-Si gated counterparts. Additionally, in TaSiN MOSFETs, the effect of the different deposition methods employed for interfacial layer formation on the overall device performance is studied. Finally, the 'Multi-Stack Unified Noise' model (MSUN) is proposed to better model/characterize the 1/f noise in multi-layered high-k MOSFETs. This model takes the non-uniform trap density profile and other physical properties of the constituent gate dielectrics into account. The MSUN model is shown to be in excellent agreement with the experimental data obtained on TaSiN/HfO 2/SiO2 MOSFETs in the 78-350 K range. Additionally, the MSUN model is expressed in terms of surface potential based parameters for inclusion in to the circuit simulators.
Download or read book Noise and Fluctuations written by Massimo Macucci and published by American Institute of Physics. This book was released on 2009-05-13 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1 f Noise in MOSFETs and JFETs written by Haksong Park and published by . This book was released on 1981 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin von Haartman and published by Springer. This book was released on 2009-09-03 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Low Frequency Noise in Advanced CMOS Technology written by Chia-Yu Chen and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The main topic of this thesis is to investigate the CMOS scaling impacts on low-frequency noise properties. Such effects come from size (channel length/width) scaling, adoption of advanced doping profiles (halo pocket implantation), incorporation of alternative gate oxide (high-[Kappa]) and channel materials (SiGe). Device-level simulation capabilities have been developed to investigate low-frequency noise behavior. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation and a Hooge mobility fluctuation. Simulations based on such models have been conducted for high-[Kappa], SiGe and small gate area transistors, and the results have been correlated with experimental data, which reveals the important role of the CMOS scaling in the low-frequency noise behavior. In the study of high-[Kappa] gate dielectric it is found that carrier number fluctuation becomes the dominant noise source and the non-uniform trap energy distribution is critical to explain low frequency noise behavior. The negative impact of substrate halo doping on the low frequency noise is also studied quantitatively. Low frequency noise characteristics of Si/SiGe/Si hetero-channel MOSFETs (SiGe MOSFETs) are discussed; the study has been obtained in terms of the noise level dependence on gate bias, drain currents, and body bias, revealing the important role of the dual channels in the low-frequency noise behavior of Si/SiGe/Si hetero-channel devices. Low frequency noise characteristics in small gate area MOSFETs are studied in detail. Due to the ever decreasing gate area, the number of charge carriers in a MOSFET channel is continually going down, and single-electron low frequency noise phenomena (random telegraph noise, RTN) becomes visible, which is quite different from 1/f noise in standard MOSFETs. It is found that random telegraph noise is directly linked to Positive Bias Temperature Instability (PBTI): PBTI and RTN originate from the same physical process, charge trapping in the high-[Kappa] dielectric. The correlation between Id- and Ig-RTN is clearly observed. Ig-RTN is directly related to physical trapping or de-trapping and the Id-RTN reflects sensitivity to charge trapping as determined by gm. This dissertation has explored advanced TCAD simulations to overcome obstacles in low frequency noise and explained a comprehensive view and the underlying physics for low frequency noise in advanced CMOS technology.
Download or read book 1 f Noise in MOSFETs with Ultrathin Gate Dielectrics written by Blaine Jeffrey Gross and published by . This book was released on 1992 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Semiconductor Devices written by Kuang-Hann George Duh and published by . This book was released on 1984 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book G R and 1 F Noise in Semiconductor Devices written by Kostas G. Amberiadis and published by . This book was released on 1982 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability and 1 f Noise Properties of MOSFETs with Nitrided Oxide Gate Dielectrics written by Rajsekhar Jayaraman and published by . This book was released on 1988 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Solid State Devices and Circuits written by Albert Van der Ziel and published by Wiley-Interscience. This book was released on 1986-05-13 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gives basic and up-to-date information about noise sources in electronic devices. Demonstrates how this information can be used to calculate the noise performance, in particular the noise figure, of electronic circuits using these devices. Optimization procedures, both for the circuits and for the devices, are then devised based on these data. Gives an elementary treatment of thermal noise, diffusion noise, and velocity-fluctuation noise, including quantum effects in thermal noise and maser noise.
