Download or read book Measurement and Control of Oxygen in Liquid Phase Epitaxial Growth of GaAs written by James Sheng-Chung Chang Chang and published by . This book was released on 1983 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Controlled Liquid Phase Epitaxial Growth of GaAs written by Salem Omar Issa and published by . This book was released on 1977 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Control of Impurities in the Epitaxial Growth of High Quality GaAs written by David A. Stevenson and published by . This book was released on 1983 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A research program is described on the topic of impurity incorporation during the growth of GaAs epitaxial layers. The major portion of the research was the design, construction, and characterization of a molecular beam mass spectrometry (MBMS) system and its use as a diagnostic analytical tool to evaluate typical gaseous environments used in the growth of III-V single crystal layers. The fundamental gas dynamics of the MBMS sampling process were studied as well as the limitations and correction factors for this technique. Two crystal growth environments were analyzed: a liquid phase epitaxial (LPE) GaAs growth system; and an organometallic vapor phase epitaxy (OMVPE) system. In the former system, it was shown that there are significant concentrations of O, C, Si gaseous species in the gas ambient which appear to be the major potential impurities. For OMVPE, two topics were emphasized: the side reactions of the organometallic (OM) reactants, particularly those involving oxygen containing species; and the graphite-OM interaction.

Download or read book Proceedings of the Symposium on High Temperature Materials Chemistry II written by Zuhair A. Munir and published by . This book was released on 1983 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Download or read book Liquid Phase Epitaxial Growth of GaAs written by and published by . This book was released on 1997 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into new semiconductor materials for measurement of electromagnetic radiation over a wide range of energies has been an active field for several decades. There is a strong desire to identify and develop new materials which can lead to improved detectors. Such devices are expected to solve problems that cannot be solved using the semiconductor materials and device structures which have been traditionally used for radiation detection. In order for a detector which is subjected to some type of irradiation to respond, the radiation must undergo an interaction with the detector. The net result of the radiation interaction in a broad category of detectors is the generation of mobile electric charge carriers (electrons and/or holes) within the detector active volume. This charge is collected at the detector contacts and it forms the basic electrical signal. Typically, the collection of the charge is accomplished through the imposition of an electric field within the detector which causes the positive and/or negative charges created by the radiation to flow in opposite directions to the contacts. For the material to serve as a good radiation detector, a large fraction (preferably 100%) of all carriers created by the interacting incident radiation must be collected. Charge trapping by deep level impurities and structural defects can seriously degrade detector performance. The focus of this thesis is on far infrared and X-ray detection. In X-ray detector applications of p-I-n diodes, the object is to measure accurately the energy distribution of the incident radiation quanta. One important property of such detectors is their ability to measure the energy of individual incident photons with high energy resolution.

Download or read book Liquid Phase Epitaxial Growth of GaAs written by Dawnelle Ivy Wynne and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Liquid Phase Epitaxial LPE GaAs Layers written by Robindra Dat and published by . This book was released on 1979 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rapid Liquid Phase Epitaxial Growth Studies of GaAs written by Hendrik J. Gerritsen and published by . This book was released on 1987 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vapor Phase Epitaxial Growth of GaAs written by William Marlin Evey and published by . This book was released on 1978 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bibliography on the High Temperature Chemistry and Physics of Materials written by and published by . This book was released on 1982 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Epitaxial Growth of GaAs from Liquid Phase written by Maciej Piskorski and published by . This book was released on 1974 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1983 with total page 1334 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book LIQUID PHASE EPITAXIAL GROWTH OF Ga1 Al As GaAs HETEROSTRUCTURES written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book On the Growth of Thin Liquid Phase Epitaxial GaAs Layers on Semi insulating GaAs written by Vincent John Watters and published by . This book was released on 1985 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt: