Download or read book MBE Growth and Properties of GaAsSbN GaAs Single Quantum Well Heterostructures written by Liangjin Wu and published by . This book was released on 2005 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigates molecular beam epitaxy (MBE) growth of coherently strained galium arsenic antimony nitrogen/galium arsenic (GaAsSbN/GaAs) single quantum well (SQW) heterostructures with nitrogen composition. Uses an elemental solid source MBE system with radio frequency (RF) plasma for the growth. Investigates a comprehensive and systematic study of the effect of important growth conditions on the structural and optical properties of the heterostructures as well as on the composition of the quantum wells (QW). Conditions include the source shutter opening sequences, which expose the substrate to antimony (Sb) flux prior to the QW growth and simultaneously open all source shutters; the substrate temperature (400-490 °C); the annealing ambient (ex-situ annealing in a nitrogen ambient and in-situ annealing in an arsenic overpressure); and the annealing temperature (650-800 °C).
Download or read book Molecular Beam Epitaxial Growth of Lattice matched GaAsSbN GaAs and InGaAsSbN GaSb Quantum Wells for Optoelectronic Devices written by Sudhakar K. Bharatan and published by . This book was released on 2009 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses a growth and characterization study of thick gallium arsenic antimony nitrogen (GaAsSbN) layers lattice matched to gallium arsenic (GaAs) for solar cell applications and indium gallium arsenic antimony nitrogen / gallium antimony (InGaAsSbN/GaSb) single quantum well (SQW) heterostructures for optoelectronic applications. Includes detailed structural, vibrational, and optical characteristics of the structures. Presents the effects of in-situ annealing in As ambient and ex-situ annealing in nitrogen (N) ambient on the low temperature photoluminescence (PL) characteristics.
Download or read book Effects of N Incorporation on the Properties of GaAsSbN Single Quantum Wells and Light Emitting Devices in the 1 55 Micron Wavelength Region written by Kalyan C. Nunna and published by . This book was released on 2007 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents the growth and characterization of the gallium arsenic antimony nitrogen (GaAsSbN) single quantum well (SQW) heterostructures grown by plasma assisted solid source molecular beam epitaxy (MBE) technique. Studies high resolution x-ray diffraction (HRXRD), photoluminescence (PL), and magneto-photoluminescence (MPL) as functions of nitrogen (N) concentration.
Download or read book Optical Studies Of GaAsSbN Alloys and Their Quantum Well Heterostructures written by and published by . This book was released on 2004 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the growth and characterization of GaAsSbN quantum wells (QWs) grown in an elemental solid source molecular beam epitaxy (MBE) system with a RF plasma nitrogen source is presented. A systematic study has been carried out to determine the influence of various growth conditions such as the source shutter opening sequence, substrate temperature, various nitrogen (N) pressures and annealing in various ambient on the optical and structural properties of the QWs. N and Sb incorporations were found to depend strongly upon both the substrate temperature and source shutter opening sequence. The substrate temperature in the range of 430-470 deg C was found to be Optimum. The presence of Pendullusong and high frequency fringes due to the cap layer were observed in high-resolution x-ray diffraction (HRXRD) spectra of QWs, for N composition variation up to 2.3%, attesting to the excellent structural quality of the grown layers and interfaces. With increase in N concentration up to 0.7% the energy gap decreases at a rate of 270meV/% change in N, while with further increase in N concentration the change in PL peak energy reduces to 30meV/% change in N. Narrow PL FWHM of 20 meV at PL peak energy of 0,82 eV at 4K has been achieved on annealed samples. The PL temperature dependence studies carried out on these samples indicate evidence of "inverted s-shaped" behavior in the low temperature regime, being more pronounced in samples annealed in a N ambient. The samples annealed in Situ under an As overpressure exhibit less carrier localization, which is attributed to a reduction in the nonradiative recombination centers.
Download or read book Gaas And Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994-10-25 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book A Study of GaAsSb GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy written by Kalyan C. Nunna and published by . This book was released on 2003 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single and multiple quantum well (QW) structures of GaAsSb/GaAs have been grown by Molecular Beam Epitaxy (MBE) for different compositions of Sb ranging from 17 to 33 % with corresponding shift in the 4K photoluminescence (PL) peak positions form 1.125 eV to 0.98 of eV. Low values of the full width at half maxima of the 4K PL linewidth in the range of 17-23 meV, and the presence of GaAs free exciton peak, attest to the good quality of the QW heterostructures grown. Significant blue shifts in PL peak positions with laser intensity are observed. Includes the in-situ monitoring technique, Reflected High Energy Electron Diffraction (RHEED).
Download or read book Progress in Compound Semiconductors III Electronic and Optoelectronic Applications Volume 799 written by Daniel J. Friedman and published by . This book was released on 2004-04-07 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book A Study of GaAsSbN GaAs and GaAsSb GaAs Quantum Wells Using High Resolution X ray Diffraction written by Sreenivasa V. Kothamasu and published by . This book was released on 2003 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single and multiple quantum wells of GaAsSb/GaAs, GaAsSbN/GaAs, and GaAsSbN/GaAs bulk samples have been grown using an EPI 930 MBE system and characterized by high resolution x-ray diffraction. The rocking curves were simulated using RADS Mercury software where the lattice parameter, composition and thickness of the layers were used as the fitting parameters.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Quantum Effects in Heterostructures written by L. Esaki and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: InAs/GaSb and GaSb/AlSb superlattices, GaSb/InAs/GaSb quantum wells and GaAs/GaAlAs heterojunctions were prepared by MBE. Their electronic properties were investigated by optical and transport measurements including photoluminescence, far-infrared magneto-absorption, and the quantized Hall effect.
Download or read book Transport Properties of GaAs InGaAs Double Quantum Wells and Graded InGaAs Heterostructures written by M. D. Godfrey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Investigations of Transport and Optical Properties of 3 5 Quantum Well Structures Grown Via Molecular Beam Epitaxy Under Optimal Growth Conditions written by and published by . This book was released on 1989 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zero field mobilities in GaAs/A1(x)Ga(1-x)As(100) inverted HEMT structures in excess of 100,000 sq cm/V-Sec at LN2 temperatures have been achieved . The possibility of high mobilities in square single quantum wells with modulation doping on the inverted interface side only is demonstrated. Photoluminescences linewidth dependence on the square single quantum well width shows inverse proportion rather than the inverse cubic proportion behavior expected from the popularly used notion of well width fluctuations. The observed behavior is shown to be consistent with fluctuations in the band edge discontinuity (i.e. well depth) arising from in-plane fluctuations in the alloy composition of the A1xGa(1-x)As barrier layers in high quality structures. Influence of an electric field across single and coupled-double quantum wells on their optical characteristics is examined theoretically and through photoluminescence, photocurrent, electroreflectance, photoreflectance and Photovoltage measurements. Exploiting growth conditions controlled thermodynamic and kinetic effects on facet formation and inter-facet migration, a unique in-situ method for realization of quantum wire and quantum box structures without the need for lithography or direct-write patterning on such small dimensions is demonstrated. Finally, some initial results on resonant tunneling diodes are reported.
Download or read book Electronic properties and device applications of GaAs AlGaAs quantum barrier and quantum well heterostructures written by Alice R. Bonnefoi and published by . This book was released on 1989 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth and Microstructural Characterization of ZnSe GaAs Quantum Wells and Double Heterostructures written by Jody Lee House and published by . This book was released on 1997 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of GaAs Al Ga As and GaAs Al Ga as Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy on the 211 Orientation of GaAs written by Seshadri Subbanna and published by . This book was released on 1985 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties and Device Applications of GaAs Al Subscript X GA Subscript 1 x AS Quantum Barrier and Quantum Well Heterostructures written by Alice Renee Bonnefoi and published by . This book was released on 1987 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAsSb InGaAs Type II Quantum Wells for Long wavelength Lasers on GaAs Substrates written by and published by . This book was released on 2000 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
