Download or read book MBE Growth and Initial Nucleation Kinetics of GaN on GaAs 100 Substrates written by Mark Lee O'Steen and published by . This book was released on 1995 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nucleation and Growth of GaN on GaAs 001 Substrates written by and published by . This book was released on 1999 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.
Download or read book Nucleation and Growth of Gan Islands by Molecular Beam Epitaxy written by Ka-Yan Pang and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Nucleation and Growth of GaN Islands by Molecular-beam Epitaxy" by Ka-yan, Pang, 彭嘉欣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled NUCLEATION AND GROWTH OF GaN ISLANDS BY MOLECULAR-BEAM EPITAXY Submitted by PANG Ka Yan for the degree of Master of Philosophy at The University of Hong Kong in November 2005 Gallium Nitride (GaN) has attracted a lot of attention recently due to its wide energy band gap (3.39 eV) and high breakdown field (3.3 x 10 V/cm). These properties make GaN a promising candidate for high-temperature, high-power electronics and blue and green light-emitting device applications. Due to the lack of bulk GaN crystal, the material is usually grown epitaxially on foreign substrates. There is still much room for improvement for the quality of epitaxial GaN. It is known that GaN grown under excess-Ga flux conditions have a smooth surface, but the kinetics of film growth under such conditions remains unknown. The goal of this research was to study the kinetic processes of island nucleation and GaN growth during molecular-beam epitaxy (MBE). By examining nucleation island density, N, as a function of substrate temperature, T, the surface diffusion energy barrier, E, was derived. The scaling property of the island size distributions for different coverage was also revealed. It was found that the surface diffusion energy barrier of adatoms on the excess-Ga covered surface is 0.70 eV, assuming the critical island size for nucleation is 2, which agrees with the theoretical value. On the other hand, island size distributions at different coverage exhibit the scaling property, where the critical island size for nucleation is one under the conditions of experiments (i.e., Ga/N 1). DOI: 10.5353/th_b3677654 Subjects: Gallium nitride Nucleation Molecular beam epitaxy
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nitrides and Related Wide Band Gap Materials written by A. Hangleiter and published by . This book was released on 1999-08-19 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.
Download or read book Handbook of Thin Films Five Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-11-17 with total page 3451 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Download or read book Compound Semiconductor written by and published by . This book was released on 2003 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth Structure and Composition of Fe Films on GaAs 001 2x4 written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The structure and composition of Fe films grown on As-terminated GaAs(001)-234 surfaces at 175 C has been studied in situ with scanning tunneling microscopy (STM), photoelectron diffraction (PED), and x-ray photoelectron spectroscopy (XPS). The GaAs surfaces were prepared by molecular beam epitaxy (MBE) and exhibited large atomically well-ordered terraces. We find that the 234 reconstruction has a significant impact on the Fe nucleation and growth, with initial nucleation occurring at As-dimer sites. STM reveals that the first half-monolayer of Fe forms small two-dimensional islands along the As-dimer rows before growing onto the adjacent Ga-rich rows, with no evidence of substrate disruption. PED indicates that the growth is predominantly layer by layer, with the growth front for the nth deposited layer limited to the (n + 1)th layer. XPS spectra show that the Fe films include a concentration gradient of Ga and As out-diffused from the interface, with some of the As segregating to the Fe surface, similar to previous results obtained for growth on non-MBE prepared GaAs surfaces. Possible mechanisms for the film growth and the origins of the intermixing are discussed.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Bibliography written by Anne M. Keesee and published by . This book was released on 1979 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1985 with total page 1306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
