Download or read book MBE Growth and Characteristics of Antimonide based Quantum Wells Superlattices and Quantum Dots written by Anwen Liu and published by . This book was released on 2000 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MBE Growth and Characteristics of Antimonide based Quantum Dots written by Xue Wang and published by . This book was released on 2006 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study provides a large set of experimental data on the fabrication of InSb QDs and discusses their importance in the development of quantum dot optoelectronic devices, especially when QDs are served as the active layers in lasers.
Download or read book Properties of III V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer. This book was released on 2012-02-26 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer. This book was released on 1987 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Strained Layer Quantum Wells and Their Applications written by M. O. Manasreh and published by CRC Press. This book was released on 1997-12-23 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Download or read book Optoelectronics written by Sergei Pyshkin and published by BoD – Books on Demand. This book was released on 2015-10-07 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics Materials and Devices follows the Optoelectronics Books II and III published in 2011 and 2013, as part of the InTech collection of international works on optoelectronics. Accordingly, as with the first two books of the collection, this book covers recent achievements by specialists around the world. The growing number of countries participating in this endeavor as well as joint participation of the US and Moldova scientists in this edition testifies to the unifying effect of science. An interested reader will find in the book the description of properties and applications employing organic and inorganic materials, as well as the methods of fabrication and analysis of operation and regions of application of modern optoelectronic devices.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Download or read book Quantum Well and Superlattice Physics written by and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Wells on Indium Gallium Arsenic Compositionally Graded Buffers Realized by Molecular Beam Epitaxy written by Henry Kwong Hin Choy and published by . This book was released on 2005 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: For a long time, there has been a desire to extend the emission wavelength of GaAs-based quantum well lasers, with the aim of eventually replacing InP with GaAs as the substrate of choice for communication applications. Using dilute nitride GaInAsN QWs or InAs quantum dots, emission wavelengths have successfully been extended to 1.3 m, but significant difficulties have been met going beyond 1.3 m. In this thesis, we present an alternative approach, namely, the molecular beam epitaxy (MBE) growth of quantum wells on top of indium gallium arsenic compositionally graded buffers, with the indium composition in the buffers linearly graded from 0% to 15% or 20%. We observed that one can obtain strong quantum emission on top of such graded buffers only under a very restricted range of growth conditions, detailed in this thesis, which are not compatible with the subsequent growth of the aluminum-containing barriers necessary for carrier confinement. Furthermore, upon proper ex-situ annealing, it was able to obtain QW emission as strong as, sometimes even stronger than, that from QWs pseudomorphically grown on GaAs. However, when even slight tensile or compressive strain was added to the QWs, severe degradation occurred, which was likely related with the amount of surface roughness induced by the crosshatches developed during and after the growth of the graded buffers. Temperature dependent photoluminescence was employed as a tool to investigate the relationship between the ex-situ annealing, strain and quantum well photoluminescence. It was found that there was a significant PL decay mechanism between 50K to about 250K for the aluminum containing unannealed quantum well samples. For the unstrained ones, this mechanism could be removed effectively by annealing. However, strain in quantum well was observed to retard this removal. The same observations were made in both the pseudomorphically and metamorphically grown samples, but the metamorphic ones seemed to suffer more from the retardation. Finally, the theoretical modeling of the photoluminescence temperature dependence was reformulated such that physical processes or band diagram features could be related to the measurement results. Only under restricted circumstances, our formulation was found to be identical to the existing, commonly used, description of the photoluminescence temperature dependence.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Mechanisms and Physical Properties of Antimony based Quantum Dots and Their Integration with MOVPE Grown Epitaxial Structures written by Sergey Shusterman and published by . This book was released on 2009 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:
