Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Material Characterization and Process Development for Indium arsenide written by Rohan K. Bambery and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.

Download or read book Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide gallium Arsenide and Indium Aluminum Arsenide indium Gallium Arsenide Heterojunction Bipolar Transistors written by Saied Tadayon and published by . This book was released on 1990 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Modeling and Fabrication of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Melih Özaydin and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Design Fabrication and Characterization of High performance Self aligned Gallium Arsenide aluminum Gallium Arsenide and Gallium Arsenide gallium Indium Arsenide aluminum Gallium Arsenide Heterojunction Bipolar Transistors written by Dean Winston Barker and published by . This book was released on 1989 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Growth and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy written by Paul Michael Enquist and published by . This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Wei Li and published by . This book was released on 2008 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs). The investigated structure has the emitter region based on n-Al x Ga 1-x N alloys, while the base and collector were based on p-In y Ga 1-y N and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x10 18 CM -3 was obtained, which is the highest value published. The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.

Download or read book Indium Gallium Phosphide Gallium Arsenide Hole Barrier Bipolar Transistors written by Carlos Enrique Saavedra-Munoz and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Minority Carrier Properties in Gallium Arsenide Characterized by DC and High Frequency Characteristics of Heterojunction Bipolar Transistors written by Dong Myong Kim and published by . This book was released on 1993 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book DESIGN OF GALLIUM ARSENIDE AND INDIUM PHOSPHIDE BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH SPEED PERFORMANCE GALLIUM ARSENIDE INDIUM PHOSPHIDE written by JUNTAO HU and published by . This book was released on 1991 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: latter devices are 2.17, 1.02 and 1.11 ps, respectively.

Download or read book Computer aided Design and Processing of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter size Effects written by Lynnita Kaye Knoch and published by . This book was released on 1989 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and published by . This book was released on 1994 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optimization and Characterization of Indium Phosphide Based Heterojunction Bipolar Transistor by Thermal and Device Simulations written by Igor Lusetsky and published by . This book was released on 2005 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Review written by and published by . This book was released on 1990 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1990 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt: