Download or read book Molecular Beam Epitaxy of III V Compounds written by K. Ploog and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin film growth technique which emerged from the 'Three-temperature method' de veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through out the world, and an increasing number of highly refined III-V semiconduc tor structures with exactly tailored electronic properties have been pro duced and explored for fundamental studies as well as for device appl ica tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ... Year 1977 ...

Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.

Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.

Download or read book Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy written by Nikolai N. Ledentsov and published by Springer Science & Business Media. This book was released on 1999-07-02 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Download or read book The Growth of Ga 47In 53As Planar doped Barrier Devices by Molecular Beam Epitaxy written by April Susan Brown and published by . This book was released on 1984 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Download or read book Bibliography on the High Temperature Chemistry and Physics of Materials written by and published by . This book was released on 1985 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1982 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1984 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Ion Beam Technology written by and published by . This book was released on with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Subsecond Annealing of Advanced Materials written by Wolfgang Skorupa and published by Springer Science & Business Media. This book was released on 2013-12-16 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Women in Microelectronics written by Alice Cline Parker and published by Springer Nature. This book was released on 2020-07-16 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.