Download or read book Magnetic and transport properties of II V diluted magnetic semiconductors doped with manganese and nickel written by Konstantin Lisunov and published by . This book was released on 2009 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diluted Magnetic Semiconductors written by Mukesh Kumar Jain and published by World Scientific. This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.
Download or read book Magnetic and Electronic Properties of Mn doped III V Diluted Magnetic Semiconductors written by Michael Kraus and published by . This book was released on 2006 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diluted Magnetic Semiconductors written by Mukesh Jain and published by World Scientific. This book was released on 1991-10-31 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.
Download or read book Semimagnetic Semiconductors and Diluted Magnetic Semiconductors written by M. Averous and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.
Download or read book First Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018-10 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics or spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.
Download or read book Study of the Dilute Magnetic Semiconductor Ga subscript 1 x Mn subscript X P and Undoped GaP with Hard X ray Photoemission and Angle resolved Photoemission written by Armela Keqi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of the transistor revolutionized the world by allowing advances that could hardly be imagined only a few decades earlier. Their pervasiveness in almost every imaginable device today, ranging from wristwatches to large scale industrial automation components, shows just how significant a building block of the modern world transistors are. It also underlines the significance of any potential further advances in semiconductor technology. An emerging development in this regard is the addition of magnetic properties to semiconductors, which, among other things, has the potential of enabling a significant increase in computer storage capacity as well as a corresponding cost decrease. The ability to combine the nonvolatile nature of magnetic materials with the fast speeds typical of semiconductor devices could provide a path to a dramatic improvement of storage technology. A new class of materials suggested to have both semiconductor and magnetic properties is known as dilute magnetic semiconductors (DMS). The main focus of this thesis is the study of the dilute magnetic semiconductor of the group III-V, Ga(Mn)P, which consists of GaP that is doped with metal Manganese. Ga(Mn)P is closely related to Ga(Mn)As which has received a lot of attention in the materials science community. There are, however, important differences between Ga(Mn)P and Ga(Mn)As which we will discuss in this thesis. The electronic structure of three different Ga[subscript 1-x]MnxP DMSs is investigated, with x representing the percent dopant of Mn, which is substitutional to Ga. The three dopant samples are Ga0.98Mn0.02P, Ga0.968Mn0.032P, and Ga0.959Mn0.041P and they are compared to the undoped GaP sample.The experiments reported in this thesis were performed at a number of synchrotron facilities, namely the Advanced Light Source (ALS) at Berkeley (USA), SOLEIL in Paris (France), and SPring-8 at Hyogo (Japan). All these facilities are third-generation synchrotrons. Hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV, were the methods used to study the electronic structure of the samples. The advantage of hard x-ray photoelectron spectroscopy is the ability to probe deeper into the sample, therefore measuring bulk properties of the materials. In order to understand the role of the Mn dopant in the emergence of ferromagnetism in our samples, we present both experimental data and theoretical calculations. Both core-level spectra and angle-resolved or angle-integrated valence spectra of Ga0.98Mn0.02P and the undoped GaP are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of Ga0.97Mn0.03As and GaAs (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. Furthermore, additional HXPS experimental results for all three dopant concentrations at two different photon energies, 2550 eV and 2905 eV, show a detailed study of various core-levels. Ga 2p, Ga 3d, P 2p, Mn 2p, and Mn 3s are the main core-levels analyzed and all their features such as spin-orbit splitting, multiplet splitting, and satellite are explained. Experimental data is compared to theoretical calculations using the simulation of electron spectra of surface analysis (SESSA) program.
Download or read book Introduction to the Physics of Diluted Magnetic Semiconductors written by Jan A. Gaj and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.
Download or read book Magneto and Spin Transport in Magnetically Doped Semiconductors and Magnetic Insulators written by Zihao Yang and published by . This book was released on 2017 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last two decades, spin transistors that operate using both charge and spin properties of electrons have motivated extensive studies of injection, detection and manipulation of electronic spin current in various material systems. Dilute magnetic semiconductors, in which the spin polarized charge carriers are coupled to the magnetic moment, are of particular interest due to their compatible lattice structures and similar growth methods to current Si and GaAs technology. The first part of this thesis focuses on the structural, magnetic and magnetotransport properties of magnetically doped GaN and 2D MoS2. The Gd doped AlN/GaN heterostructures are grown by plasma assisted molecular beam epitaxy. The Gd atoms are [delta]-doped at the AlN/GaN heterointerface where the two dimensional electron gas (2DEG) forms. These samples exhibit defect-induced room temperature ferromagnetism with an easy axis along the c-axis. However, the nonlinear Hall resistivity does not track the magnetization in these Gd doped samples indicating the lack of coupling between the conduction electrons in the 2DEG and the Gd-induced ferromagnetism. This makes Gd doped GaN not useful as a dilute magnetic semiconductor. Mn doped few-layer MoS2 samples synthesized via sulfurization of Mn thin film on sapphire are fabricated in the aim of realizing a 2D dilute magnetic semiconductor. However, these samples mainly show paramagnetism implying the lack of ferromagnetic coupling between the Mn dopants.
Download or read book Radiation Synthesis of Materials and Compounds written by Boris Ildusovich Kharisov and published by CRC Press. This book was released on 2016-04-19 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material
Download or read book ZnO Nanocrystals and Allied Materials written by M S Ramachandra Rao and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.
Download or read book Nanoelectronics written by and published by Elsevier. This book was released on 2018-10-05 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
Download or read book High Magnetic Transition Temperature and Semiconductor Like Transport Properties of Mn doped YbAlB4 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Magneto transport Properties of Cobalt Doped Indium Oxide Dilute Magnetic Semiconductors written by Abhijit Ghosh and published by . This book was released on 2009 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide based dilute magnetic semiconductors (DMS) are key materials for development of next generation multifunctional spintronics devices such as spin transistors and magnetic random access memories. However, the success of the spintronics devices critically depends on electrical and magneto-transport properties of DMS. This thesis investigates the effect of growth temperature and oxygen pressure on structural, optical, and magneto-transport properties of cobalt-doped indium oxide (In2O3:Co) DMS thin films. Thin films were grown under different partial oxygen pressures and substrate temperatures on quartz and sapphire substrates using pulsed laser deposition (PLD) technique. Structural, electrical, optical, and magneto-transport properties have been measured using various characterization techniques such as x-ray diffractometer (XRD), UV-visible spectroscopy, temperature dependent magneto-transport set-up, and superconducting quantum design magnetometer. The crystallinity of the films increases with increasing growth temperature as well as oxygen pressure during the growth as revealed by XRD. Hall effect and temperature dependence resistivity measurements reveal that the electrical transport properties (carrier density, mobility, and resistivity) in these films can be tuned by changing the growth temperature as well as oxygen pressure. Bandgap, measured using optical measurement, decreases with decrease in carrier concentration obtained from electrical measurement. Magneto-transport properties such as temperature dependent resistivity and magneto-resistance were found to be very sensitive to the micro-structural properties such as crystallinity as well as oxygen defect. These results provide basic information regarding electronic and magnetic properties of indium oxide as a prospective DMS for future spintronics applications.
Download or read book The Effect of Nonmagnetic Doping and Growth Temperature on the Magneto transport Properties of Mangenese sic and Cobalt Doped Zinc Oxide Dilute Magnetic Semiconductors written by Govind Mundada and published by . This book was released on 2006 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Structural And Physical Properties Of Certain Antimony Based III V Diluted Magnetic Semiconductors written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices are the building blocks of electronics and communication technology in the modern world. The charge, mass and spin of charge carriers in the semiconductor devices lay the foundations of the technology developments in the modern age. But to date only the electronic charge of the semiconductors has been exploited for such applications. The significance of the spin of charge carriers is completely ignored because in a semiconductor the half of the carriers are in spin-up state and the remainder are in spin-down state. A new electronics termed as spintronics, spin-transport based electronics, is focused to utilise the spin degree of freedom of the charge carriers in addition to its electronic charge. The devices based on these have the potential for various technological advancements like non-volatility, increased data processing speed, decreased electronic power consumption and increased integration densities as compared to the conventional semiconductor devices. In this study, the author intended to study the growth and properties of magnetic impurity doped antimony based III-V compounds and compare these results with those of the films grown by MBE. This thesis is organised into seven chapters. The first introductory chapter gives a brief review of the work on spintronics, diluted magnetic semiconductors, Ferromagnetic / paramagnetic semiconductor hybrid structures with special emphasis on the properties of antimonides which have already been reported in the literature. This is followed by the scope of the thesis. The second chapter deals with technical details of various instruments used in the present research work. Third chapter describes the growth and structural properties of bulk crystals grown by Bridgman method and thin films grown by liquid phase epitaxy (LPE). Bulk crystals of InSb and GaSb doped with magnetic elements such as Mn and Fe are grown with different doping concentrations. Thin films of InSb and GaSb doped Mn with different.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
