Download or read book Luminescence Studies of Ion Implanted Gallium Nitride and Aluminum Gallium Nitride written by Erin N. Claunch and published by . This book was released on 2003-03 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al(x)Ga(1-x)N, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.
Download or read book Luminescence Study of Ion Implanted Gallium Nitride written by Eric Silkowski and published by . This book was released on 1996-11-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Download or read book Ion Implantation Into Gan and Alinn written by Abdul Majid and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID)."
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Optical Properties of Ion implanted Impurities in Gallium Nitride written by R D. Metcalfe and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction written by Elizabeth A. Moore and published by . This book was released on 2007 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time, and implantation dose. Highly conductive alloys are critical to the fabrication of devices operating in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The AlxGa1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at room temperature with silicon ions at energies of 200 keV with doses of 1x1014, 5x1014, and 1x1015 cm-2 and annealed from 1100 to 1350 C for 20 to 40 minutes in flowing nitrogen. Excellent activation was achieved for each of the implanted silicon doses for all of the five Al mole fractions studied, with most activation efficiencies above 90%. These activation efficiencies are the highest reported activations, to the best of my knowledge. The mobilities were found to decrease as the Al concentration of the AlxGa1-xN was increased from 10 to 50% and also as the implanted silicon dose was increased. Typical mobilities ranged from 101 cm2/V s for the Al0.1Ga0.9N implanted with 1x1014 cm-2 silicon ions to 35 cm2/V s obtained for the Al0.5Ga0.5N implanted with 1x1015 cm-2 silicon ions. The cathodoluminescence results support the electrical results in determining the optimal annealing conditions.
Download or read book Ion Implantation Into Gallium Nitride written by C. Ronning and published by . This book was released on 2001 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Electroluminescent Devices Co doped with Rare Earth and Silicon written by Wang Rui and published by . This book was released on 2009 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth (RE) doped III-nitrides are being widely investigated for potential applications in optical communication and displays, due to the wide and direct energy bandgap of GaN resulting in low thermal quenching of RE ion sharp emission from ultraviolet (UV) through visible to infrared (IR) region. The UC Nanolab has been conducting RE doped GaN research for more than 10 years and many achievements were obtained, ranging from material growth to device fabrication. This dissertation studied RE emission in GaN material, focusing on the effects of electronic impurity (Si) co-doping on RE luminescence. Advanced RE doped GaN electroluminescent devices (ELDs) were also designed and fabricated. Detailed device characterization was carried out and the effect of co-dopant was investigated. Eu-doped GaN thin films were grown on sapphire wafers by molecular beam epitaxy (MBE) technique and the growth conditions were optimized for the strongest Eu luminescence. It was found that GaN thin film quality and Eu doping concentration mutually affected Eu luminescence. High quality GaN:Eu thin films were grown under Ga rich condition (III/V>1), but the strongest Eu luminescence was obtained under slightly N rich condition (III/V1). The optimum Eu doping concentration is ~0.1-1.0at.%, depending on the GaN:Eu thin film quality. Higher growth temperature (750°C) was also found to enhance Eu luminescence intensity (~10x) and efficiency (~30x). The effect of Si co-doping in GaN:RE thin films was investigated. Eu photoluminescence (PL) was enhanced ~5-10x by moderate Si co-doping (~0.05at.%) mostly due to the increase of Eu PL lifetime, but decreased very fast at high Si co-doping concentration (>0.08at.%). The increase of Eu PL lifetime is possibly due to the incorporation of Si uniformly distributing Eu ions and shielding Eu-Eu interactions. Combined with the increase in excitation cross section and carrier flux, there is a significant enhancement on Eu PL intensity. The electrical properties of GaN:RE thin films were changed from high resistive to weakly n-type due to increased electron concentration introduced by Si co-doping. GaN:RE ELDs were fabricated and the electrical and optical properties were studied by I-V and electroluminescence (EL) measurements. A hetero-junction PIN structure was designed on n-GaN:Si/GaN:RE/p-Si, employing p-Si substrates as p-type conductive layer. RE ions EL emission was found to be much stronger under forward bias than under reverse bias. The Si co-doping was also studied in GaN:RE ELDs. It was found that Er EL had strong visible & IR emission under forward bias, while there is little or no emission under reverse bias. A pn hetero-junction structure formed between p-Si and n-GaN:(Si, Er) layers was proposed to be responsible for the emission control. GaN:(Si, Eu) AC thin film ELDs were also fabricated and shown that the Si co-doping increased the Eu ions emission intensity and efficiency.
Download or read book Ion Implantation in Gallium Nitride written by Eric Porter Carlson and published by . This book was released on 2001 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride GaN II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Download or read book Gallium Nitride and Related Materials II Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Download or read book Structural Characterization of Ion Implanted Gallium Nitride written by Chang Liu and published by . This book was released on 2000 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Gallium Nitride written by Yuejun Sun and published by . This book was released on 2000 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Beam Studies of Fluorine Implanted Gallium Nitride and Aluminium Gallium Nitride written by Chung-Choi Cheng and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Positron Beam Studies of Fluorine Implanted Gallium Nitride and Aluminium Gallium Nitride" by Chung-choi, Cheng, 鄭仲材, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4327857 Subjects: Gallium nitride Aluminum nitride Positron beams Semiconductors - Spectra
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
