Download or read book Luminescence Properties of Rare Earth Doped III V and II VI Semiconductors written by Amer K. Alshawa and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped Semiconductors II Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Download or read book Rare Earth Doped Semiconductors II written by Salvatore Coffa and published by Materials Research Society. This book was released on 1996-10-25 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Download or read book State of the Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
Download or read book Rare Earth Doped Semiconductors Volume 301 written by Gernot S. Pomrenke and published by . This book was released on 1993-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Electroluminescence written by Shigeo Shionoya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Workshop on Electroluminescence (EL-88) was held at the Hotel Holiday, Tottori, Japan, October 11-14, 1988. This workshop was sponsored by the 125 Research Committee on Mutual Conversion between Light and Electricity, Japan Society for the Promotion of Science, in cooperation with SID (Society for Infonnation Display) Japan Chapter, Tottori Prefecture, the Tot tori Industrial Technology Association, and the Foundation for Advancement of International Science (FAIS). The workshop EL-88 was a continuation of the series of international work shops held successively at Liege (Belgium) in 1980, Bad Stuer (DDR) in 1983, and at Wann Springs (Oregon, USA) in 1986. It brought together scientists and engi neers from universities and industry who shared a common interest in discussing electroluminescence and related topics. The number of participants reached 253; 49 from abroad (10 countries) and 204 from Japan. This is almost four times as many as in the previous workshop in 1986, reflecting the recent rapid development and progress of electroluminescence research.
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Download or read book Air Force Research Resum s written by and published by . This book was released on with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2000-08-08 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Download or read book Rare Earth Doped III Nitrides for Optoelectronic and Spintronic Applications written by Kevin Peter O'Donnell and published by Springer Science & Business Media. This book was released on 2010-06-28 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Download or read book Luminescence and Related Properties of II VI Semiconductors written by D. R. Vij and published by Nova Publishers. This book was released on 1998 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides the readers an in-depth, yet concise, overview of the physico-chemical structures, luminescence and related properties of II-VI compounds which are being utilised and exhaustively studied these days for their applications in LED's, modern optoelectronic devices, flat EL screens and panels, infrared detectors, photovoltaic and thermal solar energy converters etc. The book, therefore, should be useful to a wide variety of people (working in the field of luminescence and related properties of II-VI compounds, i.e. advanced graduate students) and serve as a review to researchers entering in this field and working on these materials. It should also be useful to solid state spectroscopists, lasers physicists; electronic and illuminating engineering people, and all those professionals using these materials.
Download or read book State of the Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III written by Edward B. Stokes and published by The Electrochemical Society. This book was released on 2003 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transition Metal Impurities In Semiconductors written by Victor N Fleurov and published by World Scientific. This book was released on 1994-08-31 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Download or read book Proceedings of the Second Symposium on III V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Amorphous Carbon written by S. R. P. Silva and published by IET. This book was released on 2003 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: World experts in amorphous carbon have been drawn together to produce this comprehensive commentary on the current state and future prospects of amorphous carbon, a highly functional material. Amorphous carbon has a wide range of properties that are primarily controlled by the different bond hybridisations possible in such materials. This allows for the growth of an extensive range of thin films that can be tailored for specific applications. Films can range from those with high transparency and which are hard and diamond-like, through to those which are opaque, soft and graphitic-like. Application areas including field emission cathodes, MEMs, electronic devices, medical and optical coatings are now close to market.
Download or read book Properties Growth and Applications of Diamond written by A. J. Neves and published by IET. This book was released on 2001 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent breakthroughs in the synthesis of diamond have led to increased availability at lower cost. This has spurred R&D into its characterization and application in machine tools, optical coatings, X-ray windows and light-emitting optoelectronic devices. This book draws together expertise from some 60 researchers in Europe and the USA working on bulk and thin film diamond. All fully refereed, the contributions are combined to form a highly structured volume with reviews, evaluations, tables and illustrative material, together with expert guidance to the literature.
