Download or read book Luminescence and Diode Studies in Liquid Phase Epitaxy Gallium Arsenide Material Doped with Geranium and Copper written by Roberto Romano-Moran and published by . This book was released on 1972 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Liquid Phase Epitaxial Growth Of Gallium Arsenide And Aluminium Gallium Arsenide For Double Heterostructure Laser Diodes written by Standen Nigel Douglas and published by . This book was released on 1988 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide for Devices and Integrated Circuits written by Hugh Thomas and published by . This book was released on 1986 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Synthesis of Compound Semiconducting Materials and Device Applications Gallium Nitride Light Emitting Diodes written by Stanford University. Center for Materials Research and published by . This book was released on 1973 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis and characterization of hetero-epitaxial gallium nitride (GaN) films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light-emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping. (Modified author abstract).

Download or read book Gallium Arsenide Planar Doped Barrier Diodes and Transistors Grown by Molecular Beam Epitaxy written by Roger John Malik and published by . This book was released on 1981 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide written by and published by . This book was released on 1966 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxy of Gallium Arsenide a Review written by and published by . This book was released on 1992 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1970 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxial of Gallium Arsenide a Review written by D. Alexiev and published by . This book was released on 1992 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Heavily Zinc doped Gallium Arsenide and Gallium Indium Arsenide Grown by Low pressure Metal Organic Vapour Phase Epitaxy written by Roberto Benzaquen and published by . This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in the $\rm Ga\sb{0.85}In\sb{0.15}As$ alloy. At high concentrations, the discrete acceptor levels are replace by an impurity band which merges with the valence band above the Mott$\sp{\lbrack 1\rbrack}$ transition. This gives rise to a density of states band tail extending into the gap and containing both extended and localised states. In the presence of such a high density of impurities, potential fluctuations and interparticle interactions result in a band gap shrinkage $\vert \Delta E\sb{g}\vert$ which has been observed with photoluminescence experiments. A model based on the presence of Kane$\sp{\lbrack 2\rbrack}$ band tails and on the assumption of a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of heavily doped layers of GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ in the range of $p=1.6\times 10\sp $ cm$\sp{-3}-p=1.95\times 10\sp{20}$ cm$\sp{-3}.$ This model provided a good description of the experimental results. The 5 K band gap shrinkage has been found to be $\vert\Delta E\sb{g}\vert=2.7\times 10\sp{-8}p\sp{1/3}$ for GaAs and $\vert\Delta E\sb{g}\vert=1.4\times 10\sp{-8}p\sp{1/3}$ for $\rm Ga\sb{0.85}In\sb{0.15}As$ with $\vert\Delta E\sb{g}\vert$ in Ev and p in cm$\sp{-3}.$

Download or read book Photoluminescence Studies of Recombination Mechanisms in Carbon doped Gallium Arsenide written by Lorraine Calderon and published by . This book was released on 1992 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selected Area Growth for Digital Integrated Circuits and Atomic Plane Doping of Gallium Arsenide by Molecular Beam Epitaxy written by George Martin Metze and published by . This book was released on 1981 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Chromium and Oxygen Impurity Centers in Gallium Arsenide Material and FET Devices written by Ching-Der Chang and published by . This book was released on 1981 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: