Download or read book Low Temperature Oxidation written by Francis P. Fehlner and published by Wiley-Interscience. This book was released on 1986 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary study of the corrosion of metals that emphasizes the role of oxide structure in interpreting oxidation kinetics of metals and semiconductors. Covers low temperature oxidation, silicon oxidation, structure of vitreous oxides, transport processes in vitreous oxides, and oxide films. Index.

Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Download or read book STAR written by and published by . This book was released on 1964 with total page 1964 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book JJAP written by and published by . This book was released on 2005 with total page 1220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book Oxidation of Tungsten written by Vincent David Barth and published by . This book was released on 1961 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents a detailed review of available information on the oxidation of W and its alloys. W is relatively inert below 700 C. As the temperature is increased above this level, however, oxidation becomes progressively more rapid, reaching catastrophic rates at temperatures around 1200 C and above. Various theories for the mechanism and rates of W oxidation at different temperatures are reviewed, and the effect of pressure and water vapor on the stability of W oxides is discussed in detail. The elevatedtemperature reactions of W with other materials, such as refractory oxides, and with gases other than oxygen also are covered. Information on the protection of W by alloying and coating is included. (Author).

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book U S Government Research Reports written by and published by . This book was released on 1964 with total page 2180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Publications Announcements with Indexes written by United States. National Aeronautics and Space Administration and published by . This book was released on 1962 with total page 1100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Download or read book Basic Research in the Mission Agencies written by National Science Board (U.S.) and published by . This book was released on 1978 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy and water development appropriations for 1984 written by United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development and published by . This book was released on 1983 with total page 1254 pages. Available in PDF, EPUB and Kindle. Book excerpt: