Download or read book Low Temperature Photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Brian John Skromme and published by . This book was released on 1985 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Magneto photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Babya Sachi Bose and published by . This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (311)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence. Si acceptors in MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor in high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

Download or read book Characterization of Shallow Impurities in High Purity Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy written by Bun Lee and published by . This book was released on 1989 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the characterization techniques, Hall-effect measurements, photothermal ionization spectroscopy (PTIS), and photoluminescence (PL). These quantitative analyses have been made on over 500 different GaAs samples provided from about 50 different laboratories and 50 different InP samples from 15 different laboratories as grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth techniques and various independent growth parameters, particularly V/III ratios and substrate orientations. The spectroscopic analysis indicates that the relative ordering of central cell correction of shallow donor impurities in InP are identical to that of GaAs, but the amphoteric behavior of Si in LPE InP is opposite to that in LPE GaAs. Although Ge was always more amphoteric than Si, the values of amphoteric ratios of both Si and Ge in GaAs (100) layers were not noticeably changed with varying V/III ratios or other growth conditions for all of the growth techniques. The orientation dependent amphoteric behavior of Si, Ge, and C in MBE and AsCl$sb3$-MBE GaAs samples strongly suggests that the surface kinetic reactions during epitaxial growth play the dominant role in the amphoteric behavior. Obviously, the above results on the amphoteric behavior cannot be explained by the simple equilibrium thermodynamic consideration alone. The surface kinetic model has been developed to explain the amphoteric behavior of Group IV impurities in MBE and VPE GaAs. The major surface reactions for impurity incorporation involve adsorption, surface diffusion, dissociative chemisorption, and desorption, which are the rate limiting processes that can be different for different substrate orientation and different chemical impurity and/or source species used for the different growth techniques.

Download or read book Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition written by Kam Tai Chan and published by . This book was released on 1986 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 1470 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Identification and Characterization of Shallow Impurity States in Gallium Arsenide and Indium Phosphide Using Photothermal Ionization Spectroscopy written by Thomas Stanley Low and published by . This book was released on 1985 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Pressure Metalorganic Chemical Vapor Deposition and Characterization of Indium Phosphide and Indium Gallium Arsenide written by Robert Hickman and published by . This book was released on 1994 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Summary of Engineering Research written by University of Illinois at Urbana-Champaign. Office of Engineering Publications and published by . This book was released on 1989 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Indium Phosphide written by Robert K. Willardson and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com).

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Summary of Engineering Research written by University of Illinois (Urbana-Champaign campus). Engineering Experiment Station and published by . This book was released on 1990 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on III V Opto Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Characterization for Semi insulating Gallium Arsenide microform written by Yu Zhang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1982 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Directory of Federal Laboratory Technology Resources written by and published by . This book was released on 1993 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1979 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: