Download or read book Low Temperature Performance of Field Effect Transistors written by Wei Zhu and published by . This book was released on 1994 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature static characteristics of silicon junction field-effect transistors (JFETs) have been investigated and analysed. The following changes were observed after cooling down the transistors: pinch-off voltage and transconductance increases; and drain current is changed as a function of the drain-source voltage. It was found that there was an increase in the amplifying properties and a reduction in noise voltage of cooled transistors. In addition, the temperature and voltage dependence of leakage current have been studied. Temperatures below 77K are of interest in evaluating effects of impurity freezeout and temperature above 77K are important since actual device temperature will be about the ambient. Operation of FET circuits at liquid nitrogen temperature has been suggested as a means of improving circuit and system performance.
Download or read book Low Temperature Performance of Silicon Junction Field Effect Transistors written by Michael Joe Churchill and published by . This book was released on 1970 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2001-05-31 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book Low temperature Electronics written by Randall K. Kirschman and published by . This book was released on 1986 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Field effect Transistor Noise at Low Temperatures written by Richard Alan Spaulding and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K to 77° K. Analysis of the maxima can yield information on time constants, capture cross-sections and energy levels of generation centers in the depletion region. The pertinent theories of junction FET noise are reviewed with regard to temperature-dependent phenomena. Contributions due to thermal noise, shot noise, induced gate noise, surface leakage and generation centers are considered. Techniques for measuring the temperature dependence of FET noise are discussed, and a practical approach is described. Measurements are made in a typical circuit configuration in order that the results may be directly related to device applications. Measured data on the temperature dependence of noise in the 300° K to 77°K range is presented for 14 n- and p-channel FET's. Salient features of the data are analyzed and correlated with theoretical predictions.
Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D and published by Elsevier. This book was released on 2000-10-25 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Temperature Electronics: Physics, Devices, Circuits, and Applications summarizes the recent advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. Furthermore, this book provides an exploration of the currently available theory, research, and technologies related to cryoelectronics, including treatment of the solid state physical properties of the materials used in these systems. Current applications are found in infrared systems, satellite communications and medical equipment. There are opportunities to expand in newer fields such as wireless and mobile communications, computers, and measurement and scientific equipment. Low temperature operations can offer certain advantages such as higher operational speeds, lower power dissipation, shorter signal transmission times, higher semiconductor and metal thermal conductivities, and improved digital and analog circuit performance.The computer, telecommunication, and cellular phone market is pushing the semiconductor industry towards the development of very aggressive device and integrated circuit fabrication technologies. This is taking these technologies towards the physical miniaturization limit, where quantum effects and fabrication costs are becoming a technological and economical barrier for further development. In view of these limitations, operation of semiconductor devices and circuits at low temperature (cryogenic temperature) is studied in this book.* It is a book intended for a wide audience: students, scientists, technology development engineers, private companies, universities, etc.* It contains information which is for the first time available as an all-in-one source; Interdisciplinary material is arranged and made compatible in this book* It is a must as reference source
Download or read book Designing with Field effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).
Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiGe materials Processing and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium on Low Temperature Electronic Device Operation written by Daniel Foty and published by . This book was released on 1991 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Principles and Performance of Modulation doped Field Effect Transistors for Low Noise Microwave Amplification written by Lovell H. Camnitz and published by . This book was released on 1986 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigations of Field Effect Transistors at Cryogenic Temperatures written by George B. Craig and published by . This book was released on 1970 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various JFET and MOSFET devices have been studied at LN and L He temperatures. A strong increase in transconductance and decrease in equivalent input noise is registered when the ambient temperature changed from 300K to 77K. A very small change in electrical parameters of the device was noticed when the environment temperature was further lowered to 4.2K. Transient and steady state heating of the devices at 4.7K is investigated and it is found that the active part of the device heats up typically to a steady state value of 40 - 60K. In most of the devices this agrees with the thermal noise observed. A transient and steady state device heating model is constructed and the results are found to be in good agreement with the measured temperatures and measured heating transients. The equivalent input noise studies for a germanium FET device have shown a strong 1/F-noise for frequencies up to approximately 100 kHz and thermal noise for higher frequencies. At cryogenic temperatures JFET devices show a slight decrease in noise spectrum. The noise spectrum of the MOSFET devices in most cases is by an order of magnitude larger than that of the JFET device. Some of the MOSFET devices show a substantial increase in noise at lower frequencies when the environment temperature is lowered to a cryogenic level. (Author).
Download or read book Low Temperature Behaviour of P channel Diffused Silicon Field Effect Transistors written by Bishnu Das Pradhan and published by . This book was released on 1964 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
