Download or read book Low temperature in situ clean and Si and Si subscript 1 x and Ge subscript x epitaxy by remote plasma enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1992 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization and reduction of defects in epitaxial Si and Si subscript 1 x Ge subscript x Si films grown by remote plasma enhanced chemical vapor deposition written by David Stephen Kinosky and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystallographic and electrical characterization of epitaxial GE subscript x Si subscript 1 x Si and in situ doped films grown by remote plasma chemical vapor deposition written by Rong-Zhen Qian and published by . This book was released on 1993 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In Situ TEM Studies of the Growth of Strained Si Sub 1 Minus X Ge Sub X by Solid Phase Epitaxy written by and published by . This book was released on 1990 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge(subscript x) on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge(subscript x) with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge(subscript x) film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge(subscript x) (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C. 8 refs., 3 figs., 1 tab.

Download or read book Kinetics of low temperature epitaxy of Si and Si1 subscript x Ge subscript x by photochemical vapor deposition written by Burt Wayne Fowler and published by . This book was released on 1992 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Silicon Epitaxy by Remote Plasma enhanced Chemical Vapor Deposition written by Scott Dwight Habermehl and published by . This book was released on 1994 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ge subscript x Si subscript 1 x epitaxial layers grown by rapid thermal processing chemical vapor deposition written by Kim Hsi-I Jung and published by . This book was released on 1989 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxygen Incorporation During Low temperature Chemical Vapor Deposition and Its Effects on the Electronic Properties of Epitaxial Si and Si 1 x Ge x Films written by Peter V. Schwartz and published by . This book was released on 1992 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment written by and published by . This book was released on 1992 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.

Download or read book Effects of hydrogen termination on the low temperature growth mode Si on Si 100 by remote plasma enhanced chemical vapor deposition written by Bruce Bennett Doris and published by . This book was released on 1997 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition written by T. J. Donahue and published by . This book was released on 1985* with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition written by T. J. Donahue and published by . This book was released on 1985 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Low temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition written by T. J. Donahue and published by . This book was released on 1985* with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition of Epitaxial Si Si Ge Ge and Novel High K Gate Dielectrics Using Remote Plasma Chemical Vapor Deposition written by Xiao Chen and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Electrical Characterisation of Si and Si Si subscript 1 x Ge subscript X Si Structures Grown by Molecular Beam Epitaxy written by James Cordeaux Brighten and published by . This book was released on 1993 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Coherent Strain Changes in Si Ge Alloys Grown by Ion Assisted Molecular Beam Epitaxy written by H. A. Atwater and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although low energy ion bombardment has been employed in various contexts epitaxial growth, such as enhanced dopant incorporation, surface cleaning during plasma enhanced chemical vapor deposition, and direct low energy ion beam deposition, key questions about the interaction of low energy ions with growing surfaces remain unanswered. Improved understanding of ion-surface interactions during growth may yield additional elements of control over epitaxial film structure, strain state, and composition. Of particular interest for high quality epitaxial films is the identification of the regime in which surface and near-surface processes, such as surface diffusion and incorporation at growth sites, can be enhanced at low temperatures while avoiding or controlling damage in the deposited films.

Download or read book Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor written by and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.