Download or read book Low Pressure Chemical Vapor Deposition of Titanium Silicide written by Vida Ilderem and published by . This book was released on 1985 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Very Low Pressure Chemical Vapor Deposition Process for Blanket and Selective Titanium Silicide Films written by Vida Ilderem and published by . This book was released on 1988 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Low Pressure Chemical Vapor Deposition Process for Titanium Disilicide Films with and Without Plasma Enhancement written by Jaegab Lee and published by . This book was released on 1991 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma enhanced Chemical Vapor Deposition of Titanium Silicide written by Edwin Earl Cervantes and published by . This book was released on 1985 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide written by Xiaowei Ren and published by . This book was released on 1995 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Pressure Chemical Vapor Deposition LPCVD of Titanium Nitride written by Sameer Narsinha Dharmadhikari and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.

Download or read book Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Heavily Doped Silicon written by Hua Fang and published by . This book was released on 1999 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Kinetic Optimization of Titanium Silicide Chemical Vapor Deposition written by Robert Peter Southwell and published by . This book was released on 1996 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium disilicide (TiSi$sb 2$) has found widespread application as a material for transistor gate/source/drain contacts. Considerable interest has arisen in fabrication by chemical vapor deposition (CVD) because of scalability problems with the salicide process (a Ti-Si solid-phase reaction) that currently defines the state-of-the-art. Furthermore, the possibility of selective CVD on Si vs SiO$sb 2$ offers the potential to eliminate masking and etching steps that are currently required for the salicide process. Numerous studies of thermal TiSi$sb 2$ have been performed, but the results have been hampered by one or more of the following problems: excessive substrate consumption, high nucleation and growth temperatures, or selectivity loss. In order to efficiently optimize TiSi$sb 2$ CVD for industrial applications, a quantitative kinetic understanding of this process is required. Due to the complicated, non-linear behavior of the CVD process, trial-and-error optimization, utilized by other researchers, has proved to be extremely difficult. Therefore, a novel approach has been developed to study such a complicated system. This approach involves intensive experimental studies of both the deposition process itself, and the elementary surface reactions that control the reaction. This combined approach forms the foundation for a quantitative, predictive kinetic model necessary for process optimization. The roots of this methodology are quantitative kinetics obtained in parallel with ultrahigh vacuum (UHV) experiments and actual CVD experiments. In UHV, techniques such as temperature-programmed desorption (TPD) are utilized to obtain quantitative kinetics for the elementary reaction steps (source gas adsorption and product desorption) that control the CVD process. Furthermore, advances in the existing TPD technology were required to obtain the necessary kinetics for a predictive model. For example, a new technique, differential-conversion TPD (DCTPD), is developed to yield the desorption kinetics for HCl which cannot be observed with conventional TPD. To complement the reaction kinetics obtained in UHV, experiments involving the deposition of TiSi$sb 2$ films are performed in a CVD chamber. These experiments provide confirmation of the important gas-phase reaction products observed with TPD experiments. Most importantly, reaction kinetics are measured for comparison with those calculated with the predictive model. Agreement provides confidence in these predictions and the ability of the model to optimize the process. Both steady-state and transient kinetics can be measured with the CVD apparatus. In short, with the use of a microbalance and a line-of-sight mass spectrometer, in-situ measurements of the rates of deposition, substrate consumption, and product desorption can be measured quantitatively. This information, not obtainable until this work, is necessary for accurate comparison with model predictions and to gain a full understanding of the deposition process, especially where transient behavior is observed. A predictive model has been developed and found to be accurate using the experimental studies described above, and has been utilized to develop a new, industrially applicable TiSi$sb 2$ CVD process.

Download or read book Surface Studies for the Predictive Modelling of Titanium Silicide Chemical Vapor Deposition written by Robert Peter Southwell and published by . This book was released on 1994 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Low Pressure Chemical Vapor Deposition of TaSi 2 on Silicon written by Thomas P. Wendling and published by . This book was released on 1990 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 2012-12-02 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.

Download or read book Handbook of Chemicals and Gases for the Semiconductor Industry written by Ashutosh Misra and published by John Wiley & Sons. This book was released on 2002-03-22 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive guide to the chemicals and gases used in semiconductor manufacturing The fabrication of semiconductor devices involves a series of complex chemical processes such as photolithography, etching, cleaning, thin film deposition, and polishing. Until now, there has been no convenient source of information on the properties, applications, and health and safety considerations of the chemicals used in these processes. The Handbook of Chemicals and Gases for the Semiconductor Industry meets this need. Each of the Handbook's eight chapters is related to a specific area of semiconductor processing. The authors provide a brief overview of each step in the process, followed by tables containing physical properties, handling, safety, and other pertinent information on chemicals and gases typically used in these processes. The 270 chemical and gas entries include data on physical properties, emergency treatment procedures, waste disposal, and incompatible materials, as well as descriptions of applications, chemical mechanisms involved, and references to the literature. Appendices cross-reference entries by process, chemical name, and CAS number. The Handbook's eight chapters are: Thin Film Deposition Materials Wafer Cleaning Materials Photolithography Materials Wet and Dry Etching Materials Chemical Mechanical Planarizing Methods Carrier Gases Uncategorized Materials Semiconductor Chemicals Analysis No other single source brings together these useful and important data on chemicals and gases used in the manufacture of semiconductor devices. The Handbook of Chemicals and Gases for the Semiconductor Industry will be a valuable reference for process engineers, scientists, suppliers to the semiconductor industry, microelectronics researchers, and students.

Download or read book Chemical Kinetic Studies of Titanium Silicide Chemical Vapor Deposition written by Michael Anthony Mendicino and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A methodology has been developed to study CVD systems which combines real-time analysis during growth with surface analysis in UHV. This methodology was applied to TiSi$sb2$ CVD. A predictive kinetic model was formulated that describes growth, and it showed good agreement with experimental results. The model predictions, growth results, and UHV studies were used to solve all critical processing problems in TiSi$sb2$ CVD. Four regimes of TiSi$sb2$ growth were identified: (1) film nucleation and coalescence, (2) initial growth transient, (3) steady-growth where heterogeneous reaction from SiH$sb4$ controls Si consumption, and (4) final growth transient where Si diffusion controls consumption. Film nucleation was found to be enhanced by the presence of defects on the substrate surface. Oxygen contamination inhibited nucleation. Selective nucleation enhancement was accomplished by growing Si nuclei from SiH$sb4$ to generate defects and remove native oxide. Since this process is only semi-selective, these nuclei are converted to TiSi$sb2$ at the start of growth and then selectively etched by Cl$sb2$ leaving only defects on the Si surface. Regime #2 was characterized by a growth rate maximum and then a decrease to roughly 60% of its highest value. Intentionally halting growth during this transient showed the material was C49 TiSi$sb2$. As the film thickened, a phase transformation to C54 TiSi$sb2$ occurred. Si consumption was small and constant during growth of the C49 phase then increased with the C54 transition. Regime #3 was characterized by steady-growth where heterogeneous reaction from SiH$sb4$ successfully competed with Si diffusion, even for thin films. Si consumption decreased in this regime with decreasing temperature and was characterized by an activation energy of 6 $pm$ 2 kcal/mol. Reducing the P$sb{rm TiCl4}$ in this regime was also found to decrease Si consumption. The duration of regime #3, and thus the start of the final transient regime #4, was determined by a critical thickness at which Si diffusion can no longer supply enough Si to complete the TiSi$sb2$ stoichiometry. At this point SiH$sb4$ adsorption is enhanced due to changes in the reacting surface. Si diffusion in this regime was described by: E$sb{rm diff,Si}$ = 23 kcal/mol and D$rmsb0Delta C$ = $rm 5times10sp{-17} cmsp{-1} ssp{-1}$.

Download or read book Low Pressure Metal Organic Chemical Vapor Deposition of Titanium Dioxide Thin Films in Conjunction with Photocatalytic Investigations written by Abon Jason Manuel del Rosario and published by . This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Low Pressure Chemical Vapor Deposition of TaSi 2 on Silicon written by Thomas P. Wendling and published by . This book was released on 1991 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide from Tetraethylorthosilicate written by Frank Allen Shemansky and published by . This book was released on 1991 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987 written by Electrochemical Society. High Temperature Materials Division and published by . This book was released on 1987 with total page 1296 pages. Available in PDF, EPUB and Kindle. Book excerpt: