Download or read book Low Pressure Chemical Vapor Deposition of Boron Nitride Thin Films from Triethylamine Borane Complex and Ammonia written by Narahari Ramanuja and published by . This book was released on 1998 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Setup of Low Pressure Chemical Vapor Deposition of Boron Nitride Thin Films written by Hsiao C. Liu and published by . This book was released on 1991 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transformation of Organometallics into Common and Exotic Materials Design and Activation written by R.M. Laine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design, -synthesis, and selective pyrolytic conversion of organo metallic precursdrs to materials of high purity or specific morphology (for electronic or optical applications), high strength and/or high-temperature stability (for structural or refractory applications) represents a poten tial area of extreme growth at the overlap of chemistry and materials science (materials chemistry). Research in this area is likely to have considerable impact at both the academic and societal levels because it will require development of scientific expertise in areas currently not well understood. Examples include: (1) The thermodynamics of molecular rearrangements in organometallic molecules at temperatures above 200°C; (2) The electronic properties of amorphous ceramic materials; (3) The phys icochemical properties of ceramic molecular composites; and (4) The optical properties of multicomponent glasses made by sol-gel processing. The opportunity to establish the scientific principles needed to pursue useful research goals in "materials chemistry" requires communica tion between chemists, ceramists, metallurgists, and physicists. To date, there have been few opportunities to create an environment where such communication might occur. The objective of this NATO Advanced Research Workshop was to promote discussions between experts in the varibus disci plines aligned with "materials chemistry. " These discussions were intended to identify the scope and potential rewards of research efforts in the development of: Custom-designed precursors to common and exotic materials, methods of selectively transforming these precursors in high yield to the desired material, and methods of characterizing the final products.
Download or read book Synthesis and Properties of Boron Nitride written by J.J. Pouch and published by Trans Tech Publications Ltd. This book was released on 1991-01-01 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron nitride thin films can be deposited on different substrates using techniques such as plasma deposition, ion beam deposition and reactive sputter deposition.
Download or read book Chemical Vapor Deposition Growth and Characterization of Two Dimensional Hexagonal Boron Nitride written by Roland Yingjie Tay and published by Springer. This book was released on 2018-06-20 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.
Download or read book Phase Evolution of Boron Nitride and Carbide during Chemical Vapor Deposition written by Sachin Sharma and published by Linköping University Electronic Press. This book was released on 2024-05-02 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of Boron Nitride (BN) and Boron Carbide (BC) possess properties that make them attractive for various applications. Epitaxially grown BN exhibits potential for optoelectronic devices, as piezoelectric materials, and graphene technology. Epitaxial BC is a semiconductor that could allow bandgap tuning and has potential applications in thermoelectric and optoelectronic devices. Both BN and BC material systems, generally deposited using chemical vapour deposition (CVD), are limited by the lack of control in depositing epitaxial films. In my thesis work, I have studied the evolution of various crystal phases of BN and BC and the factors that affect them during their CVD processes. I deposited and compared the growth of BN on Al2O3 (0001), (11 2 over bar 0), (1 1 over bar 02) and (10 1 over bar 0) substrates and used two organoboranes as boron precursors. Only Al2O3(11 2 over bar 0) and Al2O3 (0001) rendered crystalline films while the BN growth on the remaining substrates was X-ray amorphous. Furthermore, the less investigated Al2O3(11 2 over bar 0) had better crystalline quality versus the commonly used Al2O3 (0001). To further understand this, I studied crystalline BN thin films on an atomic scale and with a time evolution approach, uncovering the influence of carbon on hexagonal BN (h-BN). I showed that h-BN nucleates on both substrates but then either polytype transforms to rhombohedral-BN (r-BN) in stages, turns to less ordered turbostratic-BN or is terminated. An increase in local carbon content is the cause of these changes in epitaxial BN films during CVD. From the time evolution, we studied the effect of Al2O3 modification on h-BN nucleation during CVD. The interaction between boron and carbon during BN growth motivated studies also on the BxC materials. BxC was deposited using CVD at different temperatures on 4H-SiC(0001) (Si-face) and 4H-SiC(000 1 over bar) (C-face) substrates. Epitaxial rhombohedral-B4C (r-B4C) grew at 1300 °C on the C-face while the films deposited on the Si-face were polycrystalline. Comparing the initial nucleation layers on both 4H-SiC substrates on an atomic scale we showed that no interface phenomena are affecting epitaxial r-B4C growth conditions. We suggest that the difference in surface energy on the two substrate surfaces is the most plausible reason for the differences in epitaxial r-B4C growth conditions. In this thesis work, I identify the challenges and propose alternative routes to synthesise epitaxial BN and B4C materials using CVD. This fundamental materials science work enhances the understanding of growing these material systems epitaxially and in doing so furthers their development.
Download or read book Low Pressure Chemical Vapor Deposition LPCVD of Titanium Nitride written by Sameer Narsinha Dharmadhikari and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Download or read book Proceedings of the European Conference on Chemical Vapor Deposition written by and published by . This book was released on 1995 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapour Deposition of sp2 Hybridised Boron Nitride written by Mikhail Chubarov and published by Linköping University Electronic Press. This book was released on 2014-12-04 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp2-BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures. For the growth of sp2-BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H2 as carrier gas is found to be necessary for the growth of crystalline sp2-BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp2-BN film. It was observed that for the growth of crystalline sp2-BN on c-axis oriented ?-Al2O3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp2-BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp2-BN is 1500 °C. Nevertheless, the growth of crystalline sp2-BN was also observed on ?-Al2O3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp2-BN was formed, according to X-ray diffraction. Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on ?-Al2O3 with an AlN buffer layer starts with the formation of hexagonal BN (h-BN) for a thickness of around 4 nm. The formation of h-BN was observed at growth temperatures of 1200 °C and 1500 °C on ?-Al2O3 with AlN buffer layer while there were no traces of h-BN found in the films deposited on SiC substrates in the temperature range between 1200 °C and 1700 °C. As an explanation for such growth behaviour, reproduction of the substrate crystal stacking is suggested. Nucleation and growth mechanism are investigated and presented in the papers included in this thesis.
Download or read book Advanced Metallization for Future ULSI Volume 427 written by Materials Research Society. Meeting and published by . This book was released on 1996-11-08 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feature sizes of microelectronic devices have entered the deep submicron regime. The process integration and structure-properties control of the multilevel metal circuitry demand an interdisciplinary interaction and understanding between manufacturing and research. To realize the vision presented in the national technology road map, material and technological challenges will need to be overcome. For example Cu conductor and its barrier metals and low-dielectric constant insulators are at issue. For materials processing, chemical-mechanical planarization and low-temperature filling of high-aspect ratio vias are challenges. For materials examination, the metrology of submicron structures is nontrivial and for materials reliability, the interplay among multiple driving forces and the response in small-dimension microstructures are intriguing. These issues are the focus of this book from MRS. Topics include: road map, technology and metrology of submicron device structures; reliability issues for Cu metallization; Al interconnects and vias; barrier metal; interlevel low-K dielectrics and contact to Si and compound semiconductors.
Download or read book Characterization of Low Pressure Chemically Vapor Deposited Boron Nitride Films as Low Dielectric Constant Materials written by Manish Narayan and published by . This book was released on 1996 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thirteenth European Conference on Chemical Vapour Deposition written by Dimitris Davazoglou and published by . This book was released on 2001 with total page 1240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Pressure Chemical Vapor Deposition of Semiconducting Boron Carbide Thin Films on Silicon written by Thomas Gregory Wulz and published by . This book was released on 2014 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High purity Fine Particle Boron Nitride Powder Synthesis at 750 to 7500C written by R. S. Kalyoncu and published by . This book was released on 1986 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation of Chemical Vapor deposited Materials for Use in Field enhanced Electron Emission Studies written by David G. MCMaster and published by . This book was released on 1966 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: The general principles of chemical vapor deposition (CVD) are described and specific experimental results on the deposition of pyrolytic graphite, of CVD boron nitride, and of CVD tungsten on tungsten substrates are discussed. In order to obtain uniform anisotropic, thin films of pyrolytic graphite and CVD boron nitride, the deposition parameters such as deposition temperature, concentration of the gaseous reactants, and gas flow pattern were varied, and their influence on the deposits was studied. It was found that the uniformity of pyrolytic graphite can be increased by using high total gas flow rates and low methane concentrations. The most uniform CVD-boron nitride deposits were obtained under the following conditions: Temperature: 1600C; Gas flow rate (cc/min): ammonia 10, boron trichloride 6, nitrogen 4. The deposits of pyrolytic graphite and CVD boron nitride exhibited a high degree of anisotropy. Thin-film sandwich structures of pyrolytic graphite and CVD boron nitride were successfully produced. Preliminary tests have been performed with CVD tungsten. (Author).
Download or read book Proceedings of the Tenth European Conference on Chemical Vapour Deposition Venice Italy September 10 15 1995 written by Giovanni A Battison and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Method of Chemical Vapor Deposition of Boron Nitride Using Polymeric Cyanoborane written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.
