EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Low pressure Chemical Vapor Deposition by Thermolysis of Disilane for Low temperature Fabrication of Pn Junction Solar Cells

Download or read book Low pressure Chemical Vapor Deposition by Thermolysis of Disilane for Low temperature Fabrication of Pn Junction Solar Cells written by Daniel D. Pates and published by . This book was released on 2006 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-pressure chemical vapor deposition (LPCVD) reactor was built in order to implement a low-temperature process to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to 550 °C. Undoped films were grown and found to have significantly lower growth rates and were not practical at temperatures less than 500 °C. The films were completely amorphous for growth temperatures of less than 500 °C, and crystallinity increased sharply above 500 °C. The optical properties of the films exhibited low optical bandgaps of approximately 1.4-1.1 eV. The conductivity of the doped films was found to be on the order of 10−3 S/cm. Devices were fabricated by depositing p-type layers on n-type crystalline silicon substrates to form pn junctions. Diodes and pn junction photovoltaic devices were fabricated, exhibiting modest but promising performance, and were limited by parasitic series resistance. This research represents the first reported work on fabricating pn junction photovoltaic devices in a low-temperature LPCVD process using disilane, and serves as a solid foundation for future work to improve the process and fabricate novel device structures.

Book Commencement

Download or read book Commencement written by Iowa State University and published by . This book was released on 2006 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book THE LOW TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE  CHEMICAL VAPOR DEPOSITION

Download or read book THE LOW TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE CHEMICAL VAPOR DEPOSITION written by JEFFREY L. DUPUIE and published by . This book was released on 1991 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: deposition scheme holds much promise for low temperature film growth.

Book Chemical Vapor Deposition

    Book Details:
  • Author : S Neralla
  • Publisher : BoD – Books on Demand
  • Release : 2016-08-31
  • ISBN : 9535125729
  • Pages : 292 pages

Download or read book Chemical Vapor Deposition written by S Neralla and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.

Book Handbook of Chemical Vapor Deposition  CVD

Download or read book Handbook of Chemical Vapor Deposition CVD written by Hugh O. Pierson and published by William Andrew Publishing. This book was released on 1992-01-01 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive overview of the principles, technology and application of chemical vapor deposition (CVD), an extremely versatile process which can be used to manufacture coatings, powders, fibers and monolithic components. It presents a clear, objective, systematic assessment of CVD, including an e

Book Chemical Vapor Deposition for Microelectronics

Download or read book Chemical Vapor Deposition for Microelectronics written by Arthur Sherman and published by William Andrew. This book was released on 1987 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.

Book Handbook of Thin Film Deposition

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry

Book Chemical Vapour Deposition  CVD

Download or read book Chemical Vapour Deposition CVD written by Kwang-Leong Choy and published by CRC Press. This book was released on 2019-06-07 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a timely and complete overview on chemical vapour deposition (CVD) and its variants for the processing of nanoparticles, nanowires, nanotubes, nanocomposite coatings, thin and thick films, and composites. Chapters discuss key aspects, from processing, material structure and properties to practical use, cost considerations, versatility, and sustainability. The author presents a comprehensive overview of CVD and its potential in producing high performance, cost-effective nanomaterials and thin and thick films. Features Provides an up-to-date introduction to CVD technology for the fabrication of nanomaterials, nanostructured films, and composite coatings Discusses processing, structure, functionalization, properties, and use in clean energy, engineering, and biomedical grand challenges Covers thin and thick films and composites Compares CVD with other processing techniques in terms of structure/properties, cost, versatility, and sustainability Kwang-Leong Choy is the Director of the UCL Centre for Materials Discovery and Professor of Materials Discovery in the Institute for Materials Discovery at the University College London. She earned her D.Phil. from the University of Oxford, and is the recipient of numerous honors including the Hetherington Prize, Oxford Metallurgical Society Award, and Grunfeld Medal and Prize from the Institute of Materials (UK). She is an elected fellow of the Institute of Materials, Minerals and Mining, and the Royal Society of Chemistry.

Book Japanese Science and Technology  1983 1984

Download or read book Japanese Science and Technology 1983 1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Rapid Thermal Annealing Chemical Vapor Deposition and Integrated Processing  Volume 146

Download or read book Rapid Thermal Annealing Chemical Vapor Deposition and Integrated Processing Volume 146 written by David Hodul and published by . This book was released on 1989-11-03 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Book Chemical Vapor Deposition

Download or read book Chemical Vapor Deposition written by Srinivasan Sivaram and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.

Book Principles of Chemical Vapor Deposition

Download or read book Principles of Chemical Vapor Deposition written by D.M. Dobkin and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.

Book Remote Plasma Chemical Vapor Deposition for High Efficiency Heterojunction Solar Cells on Low Cost  Ultra thin  Semiconductor on metal Substrates

Download or read book Remote Plasma Chemical Vapor Deposition for High Efficiency Heterojunction Solar Cells on Low Cost Ultra thin Semiconductor on metal Substrates written by Emmanuel U. Onyegam and published by . This book was released on 2014 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the crystalline Si solar cell industry, there is a push to reduce module cost through a combination of thinner substrates and increased cell efficiency. Achieving solar cells with sub-100 [greek small letter mu]m substrates cost-effectively is a formidable task because such thin substrates impose stringent handling requirements and thermal budget due to their flexibility, ease of breakage, and low yield. Moreover, as the substrate thickness decreases the surface passivation quality dictates the performance of the cells. Crystalline Si heterojunction (HJ) solar cells based on hydrogenated amorphous silicon (a-Si:H) have attracted significant interest in recent years due to their excellent surface passivation properties, potential for high efficiency, low thermal budget and low cost. HJ cells with ultra-passivated surfaces showing > 700 mV open-circuit voltages (Voc) and > 20% conversion efficiency have been demonstrated. In these cells, it has been identified that high-quality a-Si:H films deposited by a low-damage plasma process is key to achieving such high cell performance. However, the options for low-damage plasma deposition process are limited. The main objectives of this work are to develop a low-plasma damage a-Si:H thin film deposition process based on remote plasma chemical vapor deposition (RPCVD) and to demonstrate high efficiency HJ solar cells on bulk substrates as well as on ultra-thin silicon and germanium substrates obtained by a novel, low-cost semiconductor-on-metal (SOM) technology. This manuscript presents a detailed description of the RPCVD system and the process leading to the realization of high quality a-Si:H thin films and high efficiency HJ solar cells. First, p-type a-Si:H thin films are developed and optimized, then HJ solar cells are subsequently fabricated on bulk and ultra-thin Si and Ge SOM substrates without intrinsic a-Si:H passivation. Single HJ cells on ~ 500 μm bulk Si and ~25 μm ultra-thin substrates exhibited conversion efficiencies of [greek small letter eta] = 16% (Voc = 615 mV, Jsc = 34 mA/cm2, and FF = 77%) and [greek small letter eta] = 11.2% (Voc = 605 mV, Jsc = 29.6 mA/cm2, and FF = 62.8%), respectively. The performance of the ~25 [greek small letter mu] m cell was further improved to [greek small letter eta] = 13.4% (Voc = 645 mV, Jsc = 31.4 mA/cm2, and FF = 66.2%) by implementing the dual HJ architecture without front side i-layer passivation. For single HJ cells based on Ge substrates, the results were [greek small letter eta] = 1.78 % (Voc = 148 mV, Jsc = 35.1 mA/cm2, and FF = 1.78%) on ~500 [greek small letter mu]m bulk Ge, compared to [greek small letter eta] =5.3% (Voc = 203 mV, Jsc = 44.7 mA/cm2, and FF = 5.28%) on ~ 50 μm Ge SOM substrates. Respectively, the results obtained on ultra-thin SOM substrates are among the highest reported in literature for based on comparable architecture and substrate thickness. In order to achieve improved cell performance, dual HJ cells with i-layer passivation of both surfaces were fabricated. First, optimized RPCVD-based i-layer films were developed by varying the deposition temperature and H2 dilution ratio (R). It was found that excellent surface passivation on planar substrates with as-deposited minority carrier lifetimes > 1 ms is achievable by using deposition temperature of 200 oC and moderate dilution ratio 0.5 ≤ R ≤ 1, even without the more rigorous RCA pre-cleaning process typically used in literature for achieving comparable results. Subsequently, dual HJ solar cells with i-layer films were demonstrated on planar and textured bulk Si substrates showing improved conversion efficiencies of [greek small letter eta] = 17.3% (Voc = 664 mV, Jsc = 34.34 mA/cm2 and FF = 76%) and [greek small letter eta] = 19.4% (Voc = 643 mV, Jsc = 38.99 mA/cm2, and FF = 77.5%), respectively.

Book Low Temperature Metal organic Chemical Vapor Deposition Growth Processes for High efficiency Solar Cells

Download or read book Low Temperature Metal organic Chemical Vapor Deposition Growth Processes for High efficiency Solar Cells written by and published by . This book was released on 1993 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the results of a program to develop a more complete understanding of the physical and chemical processes involved in low-temperature growth of III-V compounds by metal-organic chemical vapor deposition (MOCVD) and to develop a low-temperature process that is suitable for the growth of high-efficiency solar cells. The program was structured to develop a better understanding of the chemical reactions involved in MOCVD growth, to develop a model of the processes occurring in the gas phase, to understand the physical kinetics and reactions operative on the surface of the growing crystal, and to develop an understanding of the means by which these processes may be altered to reduce the temperature of growth and the utilization of toxic hydrides. The basic approach was to develop the required information about the chemical and physical kinetics operative in the gas phase and on the surface by the direct physical measurement of the processes whenever possible. The program included five tasks: (1) MOCVD growth process characterization, (2) photoenhanced MOCVD studies, (3) materials characterization, (4) device fabrication and characterization, and (5) photovoltaic training. Most of the goals of the program were met and significant progress was made in defining an approach that would allow both high throughput and high uniformity growth of compound semiconductors at low temperatures. The technical activity was focused on determining the rates of thermal decomposition of trimethyl gallium, exploring alternate arsenic sources for use MOCVD, and empirical studies of atomic layer epitaxy as an approach.