Download or read book Low noise amplifiers in SiGe hetero junction bipolar process using reduced pressure chemical vapor deposition written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, an economic SiGe HBT (hetero- junction bipolar transistor)process using reduced pressure chemical vapor deposition (RPCVD)process of high throughput and the cheap localized oxidation of silicon (LOCOS)instead of shallow trench, was developed and characterized. To test its feasibility, several low noise amplifiers were designed and fabricated. As well as high cutoff frequency and low noise SiGe HBT devices, the passive elements including planar spiral inductors with only two metal layers, metal-insulator-metal capacitor, three kinds of resistors, and varactor diode were also integrated in the process. With carefully designing of the base profile and adopting finger-type structure, the measured minimum noise figure of 1.5 dB and associated gain of 16 dB at 1.8 GHz consuming the collector current of 4.6 mA at the supply voltage of 2.5V, were obtained in the low noise device. After on-wafer calibration, one of the fabricated low noise amplifiers was measured as 2.5 dB NF and 21 dB insertion gain at the frequency of 1.8 GHz with the supply voltage of 2.5 V. Those results using the epitaxial growth by RPCVD are firstly reported, and show its possibility to RF arena.

Download or read book Design and Performance Optimization of Low Phase Noise SiGe HBT Amplifiers for Si Photonics Integrated Opto Electronic Oscillator written by Devan Bulsara and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highly stable radio-frequency (RF) local oscillators (LO) are critical for low error rate digital signal detection systems. For example, a highly stable clock signal is required for sample and hold of analog signals while superheterodyne detection systems require coherent LO's for terrestrial, deep space, and Wi-Fi communication. Opto-electronic oscillators (OEO) are well known for their broadband frequency tuning and low aperture jitter characteristics. To design a stable LO (StLO), any phase errors that contribute to the phase modulation (PM) of the oscillation frequency must be minimized. Any low frequency noise could be upconverted to the RF carrier frequency using nonlinear phase modulation to phase error (PM-PM) and amplitude modulation to phase modulation (AM-PM) conversion. To reduce the overall noise added into the StLO, RF circuit design should consider devices manufacturing process with low amplitude and phase noise at given optimum operation point of transistor and appropriate amplifier design topologies. The goal of this thesis is to explore optimum amplifier designs with low phase noise that could be integrated as part of a self-forced OEO design. This amplifier is designed using silicon germanium (SiGe) heterojunction bipolar transistor (HBT) technology from low-phase noise perspective. The RF integrated circuit (RFIC) is based on the TowerJazz (now Tower) foundry service. Key elements for the optimal performance of the HBT include optimization of gain and low noise based on transition frequency (fT), maximum frequency (fmax), maximum stable gain, minimum noise figure, and its phase variation sensitivity with the operation point variation of HBT transistor to DC bias point variations. An optimal bias point is found by considering reduced phase error due to the transistor operation point. Using the optimal HBT bias point of operation, a variety of Class A amplifiers are considered for high linearity. Particularly amplifiers including common emitter, cascade, and transimpedance amplifier (TZA) are analyzed in terms of operation from 1mA to 30mA and compared in terms of gain, noise figure, and AM-PM conversion contribution to single sideband (SSB) phase noise at various bias. All predicted SSB phase noise reported in this thesis are at 100kHz offset of 10GHz carrier frequency. Actively biased single stage CE amplifier has a simulated gain of 14.3 dB and a noise figure of 1.6 dB at 12mA. In terms of the nonlinear mixing of low frequency noise as a PM-PM conversion, the actively biased single stage amplifier has a phase noise contribution of -147.8 and -167.25 dBc/Hz with respect to the upper and lower sidebands, respectively. This amplifier design also has an AM-PM conversion contribution to phase noise of -328 dBc/Hz. In addition, the design of a cascade amplifier provided a gain as high as 28.4 dB and a noise figure of 2.9 dB at 10 GHz with the calculated SSB phase noise associated with the AM-PM conversion of -82 dBc/Hz. When considering the TZA, a broadband transimpedance of 11 dB [omega] is predicted over 2 to 18 GHz. The TZA design also is seen to have an AM-PM conversion contribution SSB phase noise of -141 dBc/Hz. The TZA cascaded with previously designed single stage amplifier provides a transimpedance of 18.6 dB [omega] at and SSB phase noise due AM-PM conversion of -102 dBc/Hz at 10 GHz. Lastly, a TZA cascaded with the dual-stage amplifier design was designed in this work to provide a transimpedance of 25.4 dB [omega] at 10 GHz. At this frequency, an AM-PM conversion contribution to SSB phase noise of -90 dBc/Hz was observed.

Download or read book High Gain InGaP GaAs Heterojunction Bipolar Transistors by Low Pressure Metalorganic Chemical Vapor Deposistion written by Theodore Chung and published by . This book was released on 2000 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Blackburn Family Newsletter written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Design of High performance InGaP GaAs Heterojunction Bipolar Transistors Grown by Low pressure Metalorganic Chemical Vapor Deposition written by Quesnell Jacob Hartmann and published by . This book was released on 1998 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low pressure Metalorganic Chemical Vapor Deposition of High Gain InGaP GaAs Heterojunction Bipolar Transistors written by Qinghong (Jack) Yang and published by . This book was released on 1999 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Download or read book Japanese Science and Technology written by and published by . This book was released on 1988 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1990 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1987 with total page 832 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.