Download or read book Low Cost Field Effect Transistor Measurements and Applications written by Ben Ford Holt and published by . This book was released on 1967 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Cost Field Effect Transistor Measurements and Applications written by Ben Ford Holt (Jr) and published by . This book was released on 1967 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field effect transistor (FET) has emerged as an important active device. Low cost FETs (about one dollar) are now available which should substantially enlarge the FET market. Measurements on and applications of various low cost FETs are discussed pointing out advantages and disadvantages of particular devices and circuits. Basic FET operation and terminology is discussed including the specification sheet, DC biasing, small signal representation, and measurements of device parameters. Mixer, tuned amplifier, oscillator, and detector circuits were constructed and tested. Low noise characteristics are examined and a brief treatment of other applications is given. (Author).

Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Field Effect Transistor Applications written by William Gosling and published by . This book was released on 1964 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organic Field Effect Transistors written by Zhenan Bao and published by CRC Press. This book was released on 2018-10-03 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: The remarkable development of organic thin film transistors (OTFTs) has led to their emerging use in active matrix flat-panel displays, radio frequency identification cards, and sensors. Exploring one class of OTFTs, Organic Field-Effect Transistors provides a comprehensive, multidisciplinary survey of the present theory, charge transport studies, synthetic methodology, materials characterization, and current applications of organic field-effect transistors (OFETs). Covering various aspects of OFETs, the book begins with a theoretical description of charge transport in organic semiconductors at the molecular level. It then discusses the current understanding of charge transport in single-crystal devices, small molecules and oligomers, conjugated polymer devices, and charge injection issues in organic transistors. After describing the design rationales and synthetic methodologies used for organic semiconductors and dielectric materials, the book provides an overview of a variety of characterization techniques used to probe interfacial ordering, microstructure, molecular packing, and orientation crucial to device performance. It also describes the different processing techniques for molecules deposited by vacuum and solution, followed by current technological examples that employ OTFTs in their operation. Featuring respected contributors from around the world, this thorough, up-to-date volume presents both the theory behind OFETs and the latest applications of this promising technology.

Download or read book Practical Radiation Oncology Physics E Book written by Sonja Dieterich and published by Elsevier Health Sciences. This book was released on 2015-06-24 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Perfect for radiation oncologists, medical physicists, and residents in both fields, Practical Radiation Oncology Physics provides a concise and practical summary of the current practice standards in therapeutic medical physics. A companion to the fourth edition of Clinical Radiation Oncology, by Drs. Leonard Gunderson and Joel Tepper, this indispensable guide helps you ensure a current, state-of-the art clinical practice. - Covers key topics such as relative and in-vivo dosimetry, imaging and clinical imaging, stereotactic body radiation therapy, and brachytherapy. - Describes technical aspects and patient-related aspects of current clinical practice. - Offers key practice guideline recommendations from professional societies throughout — including AAPM, ASTRO, ABS, ACR, IAEA, and others. - Includes therapeutic applications of x-rays, gamma rays, electron and charged particle beams, neutrons, and radiation from sealed radionuclide sources, plus the equipment associated with their production, use, measurement, and evaluation. - Features a "For the Physician" box in each chapter, which summarizes the key points with the most impact on the quality and safety of patient care. - Provides a user-friendly appendix with annotated compilations of all relevant recommendation documents. - Medicine eBook is accessible on a variety of devices.

Download or read book Designing with Field effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).

Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by . This book was released on 2024 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Advanced Field Effect Transistor: Theory and Applications offers a fresh perspective on the design and analysis of advanced FET devices and its applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in field of transistors beyond the CMOS. This book used lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of field effect transistor, including their theory and applications. In order to improve readers' learning opportunities, "Advanced Field Effect Transistor: Theory and Applications", presents a wide range of crucial topics: Design and Challenges in Tunnel FET Various modelling approach for FET Study of organic thin-film transistors Biosensing application of FET Implementation of Memory/Logic gates with FET Advent of low Semiconductor Devices and Related Implications for Upcoming Technology Nodes provides valuable insight into low-power devices and their applicability in the wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. The book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications"--

Download or read book Different Types of Field Effect Transistors written by Momčilo Pejović and published by BoD – Books on Demand. This book was released on 2017-06-07 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.

Download or read book The Six port Technique with Microwave and Wireless Applications written by Fadhel M. Ghannouchi and published by Artech House. This book was released on 2009 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main issues in microwave and wireless system design is to ensure high performance with low cost techniques. The six-port technique helps allow for this in critical network design areas. This practical resource offers you a thorough overview the six-port technique, from basic principles of RF measurement based techniques and multiport design, to coverage of key applications, such as vector network analyzers, software defined radio, and radar. The first book dedicated to six-port applications and principles, this volume serves as a current, one-stop guide offering you cost-effective solutions for your challenging projects in the field.

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.

Download or read book Designing with Field effect Transistors written by Siliconix Incorporated and published by McGraw-Hill Companies. This book was released on 1981 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical Organic Field Effect Transistors written by Drona Kumar Dahal and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors (OFETs) have shown immense potential for applications that require low temperature and solution processing on large and flexible substrates. The possibility to tailor organic semiconductors toward targeted functionality and the possibility for low-cost processing on various non-traditional substrates such as paper, plastic, fiber, cloth, etc. have made OFETs highly attractive. Over the past two decades, there has been an intense effort to improve the mobility and transit frequency of OFETs, in particular by adjusting the molecular structure of the organic semiconductor and the morphology of organic thin films, and by optimizing the device geometry. Still, a low reproducibility of transistor parameters and limited charge carrier mobility of organic semiconductors are hindering a further commercialization of this technology. In this study, the processing methods and conditions of the different OFET layers are optimized to achieve high performance and reproducible devices. In order to achieve a high transconductance and increased transit frequency in OFETs, the channel length of the transistors need to be reduced below the sub-micrometer regime. This can be easily achieved in Vertical Organic Field Effect Transistors (VOFETs) without the use of cost intensive structuring methods. However, scaling down the channel lengths into the sub-micrometer regime leads to short channel effects, particularly a large off current resulting from source/drain leakage and a weak saturation in the drain current. An incomplete understanding of the origin of these leakage currents is currently precluding an optimized design of the VOFET. Here, the influence of the injection barrier at the source electrode on the device performance of VOFETs is presented, in particular on off -currents, the on/off ratio, and the transconductance. Two different organic semiconductors are used to prepare devices with a small and large injection barrier at the source electrode. It is shown that the increased injection barrier reduces the source-drain leakage by three orders of magnitude and improves the on/off ratio by more than one order of magnitude. However, suppression of the off current by a larger injection barrier causes an increase in the contact resistance. This ultimately negatively impacts the transit frequency and transconductance of the device. The influence of the injection barrier on the transconductance, off-current, and on/off ratio is further studied by a 2D drift-diffusion simulation. It is shown that a trade off between low off currents and high transconductance values is inherent to the current device setup. To find an optimum combination of transconductance and on/off ratio, the insulation of the source electrodes is optimised and a method to grow an oxide layer that wraps around the whole electrode, including the edge of the source, is established. For this, Aluminum electrodes were anodized electrochemically, which results in a conformal growth of Aluminium Oxide with high quality. It is shown that this oxide reduces the off-currents of vertical OFETs significantly, but a decrease in on-currents with the insulation thickness is observed as well. Most importantly, corresponding vertical transistors show a good saturation in the drain current in output measurement. Integration of the high performance vertical transistors with light emitting layers is implemented to achieve vertical light emitting transistors with good switching behavior. The resonant cavity model is applied in an effort to optimize the different layer thickness of the device. In addition to studying the vertical transistor device performance and optimization, their integration with the light emitting layers is done to realize the vertical organic light emitting transistors with good electrical behavior. The resonant cavity model is applied to model the emissive behavior of vertical organic light emitting transistors and it is expected to open a new area of study in this field.