Download or read book Laterally Diffused Metal oxide semiconductor Field effect Transistors Device Design and Optimization for Low voltage and Mid voltage Power Applications written by Ali Saadat and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronics have become a fundamental aspect of modern society and smaller, even more efficient, transistors form the backbone of the electronics industry of the future. Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) field-effect transistors are a class of transis- tors commonly used in every electronic device we use in our daily life such as smart-phone chargers, kitchen appliances, and autonomous vehicles. In this thesis, we present a systematic investigation of device design optimization for LDMOS transistors suitable for low-voltage (
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-18 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book K z si csomaarchivum a K r si csoma t rsas g folyoirata Szerkeszti N meth Gyula written by and published by . This book was released on 1921 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Download or read book Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and published by Bentham Science Publishers. This book was released on 2023-12-20 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Download or read book Design of Advanced Low power Sub quarter Micron Metal Oxide Semiconductor Field Effect Transistors MOSFET written by Weize Xiong and published by . This book was released on 2001 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design of High voltage Bulk and Silicon on insultor Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistors written by Ishtiaq Ahsan and published by . This book was released on 2001 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tunneling Field Effect Transistors written by T. S. Arun Samuel and published by CRC Press. This book was released on 2023-06-08 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Download or read book Different Types of Field Effect Transistors written by Momčilo Pejović and published by BoD – Books on Demand. This book was released on 2017-06-07 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Designing with Field effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by . This book was released on 2023-08 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign.
Download or read book Modeling of a Triple Reduced Surface Field Silicon on insulator Lateral Double diffused Metal oxide semiconductor Field effect Transistor with Low On state Resistance Project Supported by the National Natural Science Foundation of China Grant No 61376080 the Natural Science Foundation of Guangdong Province China Grant No 2014A030313736 and the Fundamental Research Funds for the Central Universities China Grant No ZYGX2013J030 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer ( Q ntop ) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.
Download or read book Germanium Source Tunnel Field Effect Transistors for Ultra Low Power Digital Logic written by Sung Hwan Kim and published by . This book was released on 2012 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Driven by a strong demand for mobile and portable electronics, the chip market will undoubtedly impose "low power" as the key metric for microprocessor design. Although circuit and system level methods can be employed to reduce power, the fundamental limit in the overall energy efficiency of a system is still rooted in the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) operating principle and its immutable physics: an injection of thermally distributed carriers will not allow for switching characteristics better than 60 mV/dec at room temperature. This constraint ultimately defines the lowest energy consumed per digital operation attainable with current Complementary-Metal-Oxide-Semiconductor (CMOS) technology. In this work, Tunnel Field Effect Transistor (TFET) based on Band-to-Band Tunneling (BTBT) will be proposed and investigated as an alternative logic switch which can achieve steeper switching characteristics than the MOSFET to permit for lower threshold (V TH) and supply voltage (V DD) operation. It will be experimentally demonstrated that by employing Germanium (Ge) only in the source region of the device, a record high on to off current ratio (I ON /I OFF) can be obtained for 0.5 V operation. Technology Computer Aided Design (TCAD) calibrated to the measured data will be used to perform design optimization study. The performance of the optimized Ge-source TFET will be benchmarked against CMOS technology to show greater than 10x improvement in the overall energy efficiency for frequency range up to 500 MHz. The fundamental challenges associated with TFET-based digital logic design will be addressed. In order to mitigate these constraints, a circuit-level solution based on n-channel TFET Pass-Transistor Logic (PTL) will be proposed and demonstrated through mixed-mode simulations. The accompanying design modifications required at the device level will be discussed.
