Download or read book Lateral Epitaxial Growth of Ge Films on Si Via a Vapor liquid solid Mechanism written by Weizhen Wang and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "In recent years, there has been an increasing interest in developing alternative semiconductor materials since traditional Si-based devices have approached their physical limits. Given that Si has many advantages over other materials as substrate, the use of Si wafer is expected to continue. It is therefore important to grow high-quality semiconductor materials, e.g., thin films or nanowires, epitaxially on Si. The past thirty years have seen rapid advances in the field of heteroepitaxial Ge growth on Si because Ge-based devices can add functionality to Si chips and may be the key to enable next-generation computer systems or solar cells. The direct growth of Ge on Si, however, suffers from high-density threading dislocations that are formed during the growth process; these defects act as scattering and recombination centers that degrade the device performance. In this thesis, a novel growth approach, metal-catalyzed, lateral epitaxial growth, is demonstrated to grow Ge films on Si with reduced threading dislocation density (TDD). In contrast to the traditional blanketed film growth on Si, this technique starts with a small crystal nucleation at a specific position on Si followed by a Ge lateral growth in the horizontal direction. It has been hypothesized that during the lateral growth process the lattice mismatch between Si and Ge can be accommodated by the extension of the preexisting misfit dislocations from the initial growth region or the nucleation of dislocations from the film sidewalls instead of generating additional threading dislocations from the film surface. In this thesis, SEM and TEM were two primary characterization techniques to study the film morphologies, the growth process, and the relaxation mechanisms. One important finding was that the first nucleation areas of the films often have a higher Si concentration or may be thinner compared to the lateral overgrowth areas. This is important because such differences made it possible to figure out where the first growth occurred in electron microscopy. From here we could compare the dislocation morphologies in different areas. In plan-view and cross-sectional TEM micrographs, high-density threading dislocations were found to be present in the initial growth areas while the lateral overgrowth areas demonstrated substantially reduced TDD or even defect-free areas. Moreover, the XRD results showed that the Ge films were almost fully relaxed with little Si incorporation. Given that the growth occurred at a low temperature, 375-500 °C, we suggest the presence of new relaxation mechanism since the previous mechanism, dislocation nucleation and glide, would require a much higher temperature to fully relax the lattice mismatch strain. Therefore, we hypothesize that the strain induced by the lattice mismatch can be relaxed by extending the preexisting misfit dislocations and that lateral growth can "build in" dislocations as it grows. Furthermore, this thesis proposes a simple model to describe the relation between the catalyst (Au) area and the area of the film in plan-view SEM; a film's size can thus be estimated by the size and shape of the Au catalyst. It has been found that a large Au catalyst can absorb more Ge due to its larger vapor-liquid interface, but more Ge is required to saturate the Au. This thesis also presents a study of the optimum growth condition of Ge lateral growth. The results show that high temperature and high GeH4 partial pressure can boost the growth rate and thus increase the film size within a specified period of time. However, high growth rate can cause more uncatalyzed, vapor-solid Ge growth on Si as well. A relatively lower growth rate and a longer growth time are thus required to simultaneously increase the size of the films and reduce the uncatalyzed growth." --

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Download or read book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy written by Darren Brent Thomson and published by . This book was released on 2001 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Relaxed Ge Buffers on 111 and 110 Si Substrates Using RP CVD written by Van H. Nguyen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued scaling of Si metal oxide semiconductor field effect transistor (MOSFET) devices to enhance performance is reaching its fundamental limits and the need for new device architecture and/or new materials is driving research and development within the semiconductor industry. Germanium, with its much higher intrinsic carrier mobilities, has a considerable advantage over Si as a channel material and its compatibility with current complementary metal oxide semiconductor (CMOS) technology makes it a very promising candidate. There is currently significant technological interest in the epitaxial growth of high quality relaxed Ge layers directly on Si substrates for potential applications including: high-mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs), infrared photodetectors, solar cells and III-V integration. The crystallographic orientation of the substrate also influences the inversion layer mobility in transistors; compared to (100) orientation, Ge grown on (111) and (110) substrates can considerably enhance the carrier mobilities for electrons and holes. The 4.2% mismatch between Ge and Si is, however, a major drawback for the growth of high quality epitaxial layers, as 3-dimensional islanding, surface roughening and the generation of a high density of defects can occur which are all detrimental to performance of prospective devices. In particular, epitaxial growth on (110) and (111) surfaces is more susceptible to the formation of extended stacking faults as the gliding sequence of the dissociated 30° and 90° partial dislocations is reversed with respect to that for the (100) surface. This means that the concept of a thick graded buffer for gradual strain relaxation is not as easily applicable in the case of (111) and (110) substrates. In this work, we have investigated the growth of relaxed Ge films on (111) and (110) Si substrates by reduced-pressure chemical vapour deposition (RP-CVD) in an ASM Epsilon 2000 reactor using the high temperature/ low temperature growth technique, which comprises of a thin low temperature (LT) Ge seed, a thick high temperature (HT) Ge layer and subsequent in-situ high temperature H2 anneal. We will show how the growth conditions influence both the presence and nature of defects within the Ge layers, their surface morphology and also the state of relaxation using transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. Formation of islands in the 10 nm Ge seed layer has led to a significant enhancement in the quality of the buffer by providing a effective way to relax the layers, reducing the densities of stacking faults and threading dislocations by at least a decade compared to previous studies and also producing a smooth surface around 2 nm rms.

Download or read book Semiconductor On Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Download or read book Epitaxial Crystal Growth written by E. Lendvay and published by Trans Tech Publications Ltd. This book was released on 1991-01-01 with total page 979 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book Springer Handbook of Microscopy written by Peter W. Hawkes and published by Springer Nature. This book was released on 2019-11-02 with total page 1561 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book features reviews by leading experts on the methods and applications of modern forms of microscopy. The recent awards of Nobel Prizes awarded for super-resolution optical microscopy and cryo-electron microscopy have demonstrated the rich scientific opportunities for research in novel microscopies. Earlier Nobel Prizes for electron microscopy (the instrument itself and applications to biology), scanning probe microscopy and holography are a reminder of the central role of microscopy in modern science, from the study of nanostructures in materials science, physics and chemistry to structural biology. Separate chapters are devoted to confocal, fluorescent and related novel optical microscopies, coherent diffractive imaging, scanning probe microscopy, transmission electron microscopy in all its modes from aberration corrected and analytical to in-situ and time-resolved, low energy electron microscopy, photoelectron microscopy, cryo-electron microscopy in biology, and also ion microscopy. In addition to serving as an essential reference for researchers and teachers in the fields such as materials science, condensed matter physics, solid-state chemistry, structural biology and the molecular sciences generally, the Springer Handbook of Microscopy is a unified, coherent and pedagogically attractive text for advanced students who need an authoritative yet accessible guide to the science and practice of microscopy.

Download or read book Nucleation Epitaxial Growth and Characterization of beta SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of High quality Thin film Ge Single Crystals by Plasma enhanced Chemical Vapor Deposition written by and published by . This book was released on 1986 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth Principles and Applications Volume 570 written by Albert-László Barabási and published by . This book was released on 1999-08-26 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Silicon Selective Epitaxial Growth by Low Pressure Chemical Vapor Deposition written by Yangchin Shih and published by . This book was released on 1994 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of High quality Thin film Ge Single Crystals by Plasma enhanced Chemical Vapor Deposition written by R. A. Outlaw and published by . This book was released on 1986 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanowires written by Felix Ryler and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of nanowires have caused researchers and companies to consider using this material in several fields. Nanowires are nanostructures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. In addition, many different types of nanowires exist, including metallic, semiconducting and insulating. Nanowires hold lot of promises for different applications. Basic electronic devices like junction diodes, transistors, FETs and logic gates can be fabricated by using semiconductor and superlattice nanowires. Thermoelectric cooling system can be fabricated by using metallic nanowires. Semiconductor nanowire junctions can be used for different optoelectronic applications. Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. Depending on what it's made from, a nanowire can have the properties of an insulator, a semiconductor or a metal.Nanowires - Implementations and Applications presents current research in the study of the properties, synthesis and application of nanowires. Topics discussed include semiconductor nanowires and heterostructure based gas sensors; transport properties of nanostructured materials; nanowire array electrodes in biosensor applications and analogies between metallic nanowires and carbon nanotubes.

Download or read book Inorganic Nanowires written by M. Meyyappan and published by CRC Press. This book was released on 2018-09-03 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in nanofabrication, characterization tools, and the drive to commercialize nanotechnology products have contributed to the significant increase in research on inorganic nanowires (INWs). Yet few if any books provide the necessary comprehensive and coherent account of this important evolution. Presenting essential information on both popular and emerging varieties, Inorganic Nanowires: Applications, Properties, and Characterization addresses the growth, characterization, and properties of nanowires. Author Meyyappan is the director and senior scientist at Ames Center for Nanotechnology and a renowned leader in nanoscience and technology, and Sunkara is also a major contributor to nanowire literature. Their cutting-edge work is the basis for much of the current understanding in the area of nanowires, and this book offers an in-depth overview of various types of nanowires, including semiconducting, metallic, and oxide varieties. It also includes extensive coverage of applications that use INWs and those with great potential in electronics, optoelectronics, field emission, thermoelectric devices, and sensors. This invaluable reference: Traces the evolution of nanotechnology and classifies nanomaterials Describes nanowires and their potential applications to illustrate connectivity and continuity Discusses growth techniques, at both laboratory and commercial scales Evaluates the most important aspects of classical thermodynamics associated with the nucleation and growth of nanowires Details the development of silicon, germanium, gallium arsenide, and other materials in the form of nanowires used in electronics applications Explores the physical, electronic and other properties of nanowires The explosion of nanotechnology research activities for various applications is due in large part to the advances in the growth of nanowires. Continued development of novel nanostructured materials is essential to the success of so many economic sectors, ranging from computing and communications to transportation and medicine. This volume discusses how and why nanowires are ideal candidates to replace bulk and thin film materials. It covers the principles behind device operation and then adds a detailed assessment of nanowire fabrication, performance results, and future prospects and challenges, making this book a valuable resource for scientists and engineers in just about any field. Co-author Meyya Meyyappan will receive the Pioneer Award in Nanotechnology from the IEEE Nanotechnology Council at the IEEE Nano Conference in Portland, Oregon in August, 2011

Download or read book High Mobility Single crystalline like Si and Ge Thin Films on Flexible Substrates by Roll to roll Vapor Deposition Processes written by Ying Gao and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The widespread use of high efficiency III–V multi-junction solar cells is limited by the cost and brittleness of Ge wafers that are used as templates for epitaxial growth. In order to provide an affordable and scalable bottom template, this work aims to achieve epitaxial growth of Ge and Si films on inexpensive and flexible substrates by roll-to-roll continuous deposition. These single-crystalline-like Si and Ge thin films on metal substrates can also be utilized in high mobility thin film transistors (TFTs) well beyond the realm of present-day TFTs based on amorphous Si and organic materials. The strategy of “seed and epitaxy” was employed for epitaxial growth of Ge and Si films. It consists of an initial growth of biaxially-textured seed layer on a flexible non-crystalline substrate by ion beam assisted deposition (IBAD) followed by a deposition of lattice and thermally-matched epitaxial layers. In epi-Ge growth, the epitaxial buffer stack of “CeO2/LaMnO3/MgO” was grown on IBAD MgO seed template by roll-to-roll magnetron sputtering. Single-crystalline-like Ge films was epitaxially grown on the CeO2-buffered templates by medium frequency magnetron sputtering or plasma enhanced chemical vapor deposition with carrier mobility values as high as 1100 cm2/V·s, which is about 1000 times higher than that of amorphous Ge. These epi-Ge templates were successfully utilized to grown n- or p-type single-crystalline GaAs thin films by metal organic chemical vapor deposition which have been used to fabricate solar cells. Moreover, the epi-Si thin films were also grown on this Ge template. The resulting n-type Si film is highly oriented along (004) direction with an electron mobility of 230 cm2/V-s. High performance TFTs fabricated on both single-crystalline-like n-Si channel on flexible metal substrate, and p-Ge on flexible glass substrate confirm the superior electronic quality of the grown films. The flexible TFT of n-Si (p-Ge) exhibits an on/off ratio of ~10E6 (10E6), a field-effect mobility of ~200 (105) cm2/V-s, and a threshold voltage of -0.7 (1.0) V. These devices with superior performance open up a new era toward the next-generation flexible electronics and optoelectronics.