Download or read book The Physics and Modeling of Latch up and CMOS Integrated Circuits written by Donald B. Estreich and published by . This book was released on 1980 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Induced Latchup in CMOS Integrated Circuits written by Ming-Dou Ker and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.
Download or read book The Causes and Prevention of Latch up in CMOS Integrated Circuits written by N. A. Angelides and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Latch up in CMOS Integrated Circuits written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated.
Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.
Download or read book Latch up Control in CMOS Integrated Circuits written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The potential for latch-up, a pnpn self-sustaining low impedance state, is inherent in standard bulk CMOS-integrated circuit structures. Under normal bias, the parasitic SCR is in its blocking state but, if subjected to a large voltage spike or if exposed to an ionizing environment, triggering may occur. This may result in device burn-out or loss of state. The problem has been extensively studied for space and weapons applications. Prevention of latch-up has been achieved in conservative design (approx. 9 .mu.m p-well depths) by the use of minority lifetime control methods such as gold doping and neutron irradiation and by modifying the base transport factor with buried layers. The push toward VLSI densities will enhance parasitic action sufficiently so that the problem will become of more universal concern. The paper will surveys latch-up control methods presently employed for weapons and space applications on present (approx. 9 .mu.m p-well) CMOS and indicates the extent of their applicability to VLSI designs.
Download or read book Analysis and Prevention of Latch up in CMOS Integrated Circuits written by Rajesh Kumar Gupta and published by . This book was released on 1985 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Latch up in CMOS Integrated Circuits written by and published by . This book was released on 1988 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Latchup in CMOS Technology written by R.R. Troutman and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: Why a book on Iatchup? Latchup has been, and continues to be, a potentially serious CMOS reliability concern. This concern is becoming more widespread with the ascendency of CMOS as the dominant VLSI technology, particularly as parasitic bipolar characteristics continue to improve at ever smaller dimensions on silicon wafers with ever lower defect densities. Although many successful parts have been marketed, latchup solutions have often been ad hoc. Although latchup avoidance techniques have been previously itemized, there has been little quantitative evaluation of prior latchup fixes. What is needed is a more general, more systematic treatment of the latchup problem. Because of the wide variety of CMOS technologies and the long term interest in latchup, some overall guiding principles are needed. Appreciating the variety of possible triggering mechanisms is key to a real understanding of latchup. This work reviews the origin of each and its effect on the parasitic structure. Each triggering mechanism is classified according to a new taxonomy.
Download or read book Imaging and Evaluation of Latch up Sites in CMOS Integrated Circuits written by Nicholas Antoniou and published by . This book was released on 1988 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Test Structures for CMOS Latch up Prediction written by Philip Joseph Oldiges and published by . This book was released on 1985 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Latch Up Detection and Cancellation in CMOS VLSI Circuits written by and published by . This book was released on 2000 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report looks at the issues involved in designing integrated circuits in bulk-CMOS processes for radiation environments. First, the report describes how radiation can cause transistor threshold to change and leakage currents to increase, and how these effects are mitigated in high-density VLSI processes. Secondly, it describes how radiation can activate parasitic structures endemic to bulk-CMOS processes, causing damaging effect called latch-up. Thirdly, the report describes how latch-up can be detected in an active circuit and cancelled before damage can occur - this is accompanied by successful experimental results with laser induced latch-up. Fourthly, it describes other integrated circuit fabrication technologies, which are naturally immune to latch-up. Finally, the report concludes with recommendations regarding further research that would be needed to validate the concept of bulk-CMOS integrated circuits in radiation environments.
Download or read book Physical Design of CMOS Integrated Circuits Using L Edit written by John Paul Uyemura and published by CL-Engineering. This book was released on 1995 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Physical Design of CMOS Integrated Circuits Using L-Edit is the first book/software package that enables engineering students and professionals to perform full IC layout on an inexpensive personal computer. The Student Version of L-Edit, included with the book on a 3.5-inch disk, is a full-featured layout editor that runs on MS-DOS compatible computers with minimal hardware requirements (640K RAM, a mouse, and an EGA or better color monitor). L-Edit allows the user to implement the physical design of an integrated circuit at the silicon level, and provides output for circuit simulation on SPICE. The entire process of chip design - once the exclusive province of workstation-based CAD systems - can now be performed on a PC." "Database files for many standard MOSIS CMOS processes are provided on disk, including Orbit and HP 2.0 and 1.2-micron technology base definitions. The program provides for circuit extraction (translating the layout to a SPICE-compatible text file), and design rule checking using predefined MOSIS rules or custom-designed sets. It also features a unique cross-sectional viewer that constructs the side view layering from the layoutthis viewer helps users visualize the link between layout drawings and the device structure. Circuit designs created on the Student Version of L-Edit can be translated to GDS II or CIF format for submission to a fabrication foundry using the Professional Version of L-Edit."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
Download or read book ESD Protection Device and Circuit Design for Advanced CMOS Technologies written by Oleg Semenov and published by Springer Science & Business Media. This book was released on 2008-04-26 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Download or read book CMOS Latch up Modeling and Prevention written by Kyle Wendell Terrill and published by . This book was released on 1985 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Latch up and Radiation Integrated Circuit LURIC written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A CMOS integrated circuit test chip (Latch-Up and Radiation Integrated Circuit--LURIC) designed for CMOS latch-up and radiation effects research is described. The purpose of LURIC is (a) to provide information on the physics of CMOS latch-up, (b) to study the layout dependence of CMOS latch-up, and (c) to provide special latch-up test structures for the development and verification of a latch-up model. Many devices and test patterns on LURIC are also well suited for radiation effects studies. LURIC contains 86 devices and related test structures. A 12-layer mask set allows both metal gate CMOS and silicon gate ELA (Extended Linear Array) CMOS to be fabricated. Six categories of test devices and related test structures are included. These are (a) the CD4007 metal gate CMOS IC with auxiliary test structures, (b) ELA CMOS cells, (c) field-aided lateral pnp transistors, (d) p-well and substrate spreading resistance test structures, (e) latch-up test structures (simplified symmetrical latch-up paths), and (f) support test patterns (e.g., MOS capacitors, pn diodes, MOS test transistors, van der Pauw and Kelvin contact resistance test patterns, etc.). A standard probe pattern array has been used on all twenty-four subchips for testing convenience.
Download or read book Imaging Latch up Sites in CMOS Integrated Circuits Using Laser Scanning written by Jean-François Fenech and published by . This book was released on 1985 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
