Download or read book JFET SOS Junction Field Effect Transistor Silicon on Sapphire Devices Gamma Radiation Induced Effects written by Linda F. Halle and published by . This book was released on 1988 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Enhancement and depletion mode JFETs have been fabricated on silicon-on-sapphire substrates. When these devices are irradiated under bias with a 60Co source, their drain currents increase, and their threshold voltages shift in such a way that the devices become more difficult to pinch off. These effects can be explained by positive charge trapping at the silicon/sapphire interface. Gate to drain leakage currents also increase, and can be traced to interface effects at the gate edges rather than to the passivating oxide. These effects were studied as a function of dose rate and postirradiation annealing. Deep-level transient spectroscopy (DLTS) was performed prior to and following both irradiation and anneal on both the gate-drain and gate-source p-n junctions. DLTS trap bands were observed whose characteristics depended on the depth of the depletion layer and on the total gamma dose received. The DLTS spectra suggest that a continuum of levels is responsible for the bands, and that the emission kinetics are influenced by band bending at the Si/sapphire interface. The major bands corresponded in temperature with steps in capacitance-temperature curves. A correlation of these steps with the transistor characteristics suggests that channel pinch off can be influenced by capture and emission at deep centers. Keywords: Cobalt 60; Deep level transient spectroscopy; Junction field effect transistor; Radiation effects; Silicon on insulator; Silicon on sapphire; Transistor; Semiconductors devices.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1988-07 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ionizing Radiation Effects on Silicon on Sapphire Devices and Silicon Dioxide Films written by Joseph R. Srour and published by . This book was released on 1977 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes results of several related studies of ionizing radiation effects on silicon-on-sapphire devices and on silicon dioxide films. In the SOS investigation, emphasis was placed on the study of radiation-induced back-channel leakage current and on a comparison of devices with wet and dry gate oxides. Differing behavior for wet and dry devices is accounted for in terms of a larger density of hole traps in the sapphire for dry transistors as compared to wet units. SEM studies reveal that energy must be deposited in the sapphire before significant increases in leakage current will occur. In addition, such studies indicate that energy deposition deep in the sapphire bulk is relatively unimportant in producing leakage current. A process of radiation-induced reduction of leakage current was observed in which this current can be dramatically reduced to near its pre-irradiation value by simply reducing the applied drain bias to zero and continuing the irradiation. Models for radiations effects on SOS devices are presented. Measurements of the temporal, temperature, and electric-field dependences of radiation-induced charge transport have been performed for radiation-hardened SiO2 films.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1988 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes all works deriving from DOE, other related government-sponsored information and foreign nonnuclear information.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1988 with total page 1440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1092 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1978 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Download or read book Silicon on Insulator Technology Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Sensitivity Magnetometers written by Asaf Grosz and published by Springer. This book was released on 2016-09-20 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers, for the first time, an overview of nearly all of the magnetic sensors that exist today. The book is offering the readers a thorough and comprehensive knowledge from basics to state-of-the-art and is therefore suitable for both beginners and experts. From the more common and popular AMR magnetometers and up to the recently developed NV center magnetometers, each chapter is describing a specific type of sensor and providing all the information that is necessary to understand the magnetometer behavior including theoretical background, noise model, materials, electronics, design and fabrication techniques, etc.
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Download or read book Integrated Silicon Optoelectronics written by Horst Zimmermann and published by Springer. This book was released on 2009-10-03 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate students specializing on microelectronics or optoelectronics.
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2001-05-31 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
