Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Infrared Annealing Study of Neutron Transmutation Doped Silicon Gallium written by Thomas William Gregg and published by . This book was released on 1985 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Annealing Study of Neutron Transmutation Doped Silicon Boron written by Jeffrey B. Watson and published by . This book was released on 1982 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Defects in Neutron Transmutation Doped Silicon Gallium by Hall Effect Analysis written by and published by . This book was released on 1984 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Temperature-dependent Hall effect analysis has been used to study neutron transmutation doped, p-type silicon conventionally doped with gallium. Moderate temperature anneals of the irradiated material produced three shallow acceptor levels. The first, at 0.57 ev., was detected after prolonged anneals at 525 C and has been identified as the Ga-X level, a substitutional gallium-substitutional carbon complex. The other two levels appeared after anneals at 600 C.

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Download or read book An Annealing Study of the Lattice Parameter and the Anomalous X ray Transmission of Neutron Irradiated Boron Doped Silicon written by James W. Thomas and published by . This book was released on 1980 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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