Download or read book Ionization Radiation Effects at the Silicon sapphire Interface of Junction Field effect Transistors written by Gu-Fung David Tsuei and published by . This book was released on 1984 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JFET SOS Junction Field Effect Transistor Silicon on Sapphire Devices Gamma Radiation Induced Effects written by Linda F. Halle and published by . This book was released on 1988 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Enhancement and depletion mode JFETs have been fabricated on silicon-on-sapphire substrates. When these devices are irradiated under bias with a 60Co source, their drain currents increase, and their threshold voltages shift in such a way that the devices become more difficult to pinch off. These effects can be explained by positive charge trapping at the silicon/sapphire interface. Gate to drain leakage currents also increase, and can be traced to interface effects at the gate edges rather than to the passivating oxide. These effects were studied as a function of dose rate and postirradiation annealing. Deep-level transient spectroscopy (DLTS) was performed prior to and following both irradiation and anneal on both the gate-drain and gate-source p-n junctions. DLTS trap bands were observed whose characteristics depended on the depth of the depletion layer and on the total gamma dose received. The DLTS spectra suggest that a continuum of levels is responsible for the bands, and that the emission kinetics are influenced by band bending at the Si/sapphire interface. The major bands corresponded in temperature with steps in capacitance-temperature curves. A correlation of these steps with the transistor characteristics suggests that channel pinch off can be influenced by capture and emission at deep centers. Keywords: Cobalt 60; Deep level transient spectroscopy; Junction field effect transistor; Radiation effects; Silicon on insulator; Silicon on sapphire; Transistor; Semiconductors devices.
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration. Technical Information Center and published by . This book was released on 1977 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1977 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors written by D. Neamen and published by . This book was released on 1974 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The permanent ionizing radiation effects resulting from the use of dielectrics to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads (Si) and for various dielectric isolation techniques. The experimental vehicles used for making these determinations were dielectrically isolated. JFET's operated in such a manner that they behaved as a combination junction-MOS field-effect transistor. The experimental results observed by measuring the saturation current, turn-off voltage, maximum transconductance, and channel conductance of the junction FET show a non-monotonic relationship in the effects of a positive charge build-up in the silicon dioxide isolation dielectric with increasing dose. A theoretical model is derived for calculating the interface charge density as a function of the measurable JFET device parameters.
Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 964 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ionizing Radiation Effects in Electronics written by Marta Bagatin and published by CRC Press. This book was released on 2018-09-03 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Download or read book Proceedings written by and published by . This book was released on 1998 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1977-03 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book U S Government Research Development Reports written by and published by . This book was released on 1967 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1977 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects Design Handbook written by J. E. Drennan and published by . This book was released on 1971 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Radiation Effects on Novel Semiconductor Devices written by Edward H. Snow and published by . This book was released on 1969 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: A radiation resistant power junction field effect transistor has been designed. Several types of silicon planar Schottky barrier diodes have been exposed to ionizing radiation and the same phenomena are observed as on p-n junctions - increase in the fast surface state density and the build-up of a positive space charge in the oxide. Capacitance-voltage and Hall effect measurements have been made on high quality epitaxial GaAs before and after exposure to nuclear reactor radiation. (Author).
Download or read book 1998 5th International Conference on Solid State and Integrated Circuit Technology written by Min Zhang and published by . This book was released on 1998 with total page 1016 pages. Available in PDF, EPUB and Kindle. Book excerpt:
