Download or read book Ionization induced Annealing of Pre existing Defects in Silicon Carbide written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work reveals an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.

Download or read book Ion Irradiation Induced Damage and Dynamic Recovery in Single Crystal Silicon Carbide and Strontium Titanate written by Haizhou Xue and published by . This book was released on 2015 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this thesis work is to gain better understanding of ion-solid interaction in the energy regime where electronic and nuclear energy loss are comparable. Such responses of materials to ion irradiations are of fundamental importance for micro-electronics and nuclear applications. The ion irradiation induced modification for the crystal structure, the physical and chemical properties etc. may strongly affect the performance of functional materials that needs to be better understood. Experimentally, ion irradiation induced damage accumulation and dynamic recovery in SiC [silicon carbide] and SrTiO3 [strontium titanate] were studied in this dissertation project. Five chapters are presented: Firstly, electronic stopping power for heavy ions in light targets was experimentally evaluated for SiC. Secondly, out-surface diffusion of Ag atoms through SiC coating layer was studied by ion implantation and thermal annealing. The result also suggested that a SiO2 [silicon dioxide] thin film might serve as a diffusion barrier. Thirdly, a thermally induced recovery was studied for single crystal SiC. Through well controlled isothermal and isochronal annealing processes, activation energies were estimated and attributed to certain defect migration/recombination mechanisms. The fourth chapter focuses on a competing effect on defect dynamics due to ionization-induced defect recovery in SiC. Recovery of the existing defects resulting from a thermal spike along the ion path was expected, and was experimentally confirmed by using energetic ions. The results suggest a low threshold of electronic stopping power for the ionization-induced recovery. In the last chapter, an example of how the target material responses differently to energy deposition are demonstrated for single crystal SrTiO3. Instead of the recovery that was observed in SiC, a synergy effect of the coupled electronic and nuclear stopping energy deposition leads to formation of amorphous ion tracks. Systematic studies towards the role of defect concentration and electronic stopping power in the synergy effect were performed.

Download or read book Comprehensive Nuclear Materials written by and published by Elsevier. This book was released on 2020-07-22 with total page 4871 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials in a nuclear environment are exposed to extreme conditions of radiation, temperature and/or corrosion, and in many cases the combination of these makes the material behavior very different from conventional materials. This is evident for the four major technological challenges the nuclear technology domain is facing currently: (i) long-term operation of existing Generation II nuclear power plants, (ii) the design of the next generation reactors (Generation IV), (iii) the construction of the ITER fusion reactor in Cadarache (France), (iv) and the intermediate and final disposal of nuclear waste. In order to address these challenges, engineers and designers need to know the properties of a wide variety of materials under these conditions and to understand the underlying processes affecting changes in their behavior, in order to assess their performance and to determine the limits of operation. Comprehensive Nuclear Materials, Second Edition, Seven Volume Set provides broad ranging, validated summaries of all the major topics in the field of nuclear material research for fission as well as fusion reactor systems. Attention is given to the fundamental scientific aspects of nuclear materials: fuel and structural materials for fission reactors, waste materials, and materials for fusion reactors. The articles are written at a level that allows undergraduate students to understand the material, while providing active researchers with a ready reference resource of information. Most of the chapters from the first Edition have been revised and updated and a significant number of new topics are covered in completely new material. During the ten years between the two editions, the challenge for applications of nuclear materials has been significantly impacted by world events, public awareness, and technological innovation. Materials play a key role as enablers of new technologies, and we trust that this new edition of Comprehensive Nuclear Materials has captured the key recent developments. Critically reviews the major classes and functions of materials, supporting the selection, assessment, validation and engineering of materials in extreme nuclear environments Comprehensive resource for up-to-date and authoritative information which is not always available elsewhere, even in journals Provides an in-depth treatment of materials modeling and simulation, with a specific focus on nuclear issues Serves as an excellent entry point for students and researchers new to the field

Download or read book Annealing Mechanisms of Point Defects in Silicon Carbide written by Eva Rauls and published by . This book was released on 2003 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book Defect Structure and Evolution in Silicon Carbide Irradiated to 1 Dpa SiC at 1100 C written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy (TEM), swelling measurements, isochronal annealing, and thermal diffusivity testing were used to characterize the effects of radiation damage in SiC. Together, these techniques provided a comprehensive set of tools for observing and characterizing the structure and evolution of radiation-induced defects in SiC as a function of irradiation temperature and dose. In this study, two types of dense, crystalline, monolithic SiC were subjected to irradiation doses up to 1 dpa-SiC at a temperature of 1100 C, as well as post-irradiation annealing up to 1500 C. The microscopic defect structures observed by TEM were correlated to changes in the macroscopic dimensions, thermal diffusivity and thermal conductivity. The results demonstrated the value of using ultrapure [beta]SiC as an effective reference material to characterize the nature of expected radiation damage in other, more complex, SiC-based materials such as SiC/SiC composites.

Download or read book Radiation Effects in Silicon Carbide written by Alexander A. Lebedev and published by . This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed. Specific features of the crystal structure of SiC are also considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate (ηe), which is a standard parameter for determining the radiation hardness of semiconductors. The ηe values obtained by irradiation of various SiC polytypes with n- and p-type of conductivity are analyzed in relation to the type and energy of irradiating particles. The possible physical mechanisms of compensation of the given material are considered. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Further, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Download or read book Processing Induced Extended Defects in Silicon Carbide written by Thomas A. Kuhr and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ultra fast High Temperature Microwave Processing of Silicon Carbide and Gallium Nitride written by Siddarth G. Sundaresan and published by . This book was released on 2007 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A novel solid-state microwave annealing technique is developed in this work for post-implantation annealing of SiC and GaN, and for the controlled growth of SiC nanowires. This technique is capable of heating SiC samples to temperatures in excess of 2100 °C, at ultra-fast temperature ramping rates> 600 °C/s. Microwave annealing of ion-implantation doped (both p-type and n-type) hexagonal SiC was performed in an uncontrolled (air) ambient, as well as a controlled 100% atmosphere of nitrogen, with or without a protective graphite cap. Microwave annealing was performed in the temperature range of 1500 °C -- 2120 °C, for durations of 5 s -- 60 s. Uncontrolled ambient microwave annealing of SiC at temperatures> 1700 °C resulted in a significant oxidation of the SiC surface, leading to a loss of the implanted layer. Annealing in a 100% nitrogen atmosphere eliminated the oxidation problem. For microwave annealing at temperatures [greater than or equal to] 1800 °C, significant SiC sublimation was observed, even for 15 s annealing. Microwave annealing with a photoresist-converted graphite cap solved this surface sublimation problem for annealing temperatures up to 2100 °C. For the P+ and Al+ -implanted SiC, sheet resistances as low as 14 [Omega]/ and 1.9 k[Omega]/ and majority carrier mobilities as high as 100 cm2/Vs and 8.3 cm2/Vs, respectively, were obtained. For the Al+ -implanted SiC, sheet resistances as low as 1.9 k[Omega]/ and hole mobilties as high as 8.3 cm2/Vs were obtained. These values constitute the best ever reported electrical characteristics for ion-implanted SiC. Microwave annealing at temperatures> 1800 °C not only removed the implantation-induced lattice damage but also the defects introduced during crystal growth. Microwave annealing of in-situ as well as ion-implantation acceptor doped GaN was performed in the temperature range of 1200 °C -- 1600 °C, for a duration of 5 s, using different protective caps (AlN, MgO, graphite) for protecting GaN surfaces during annealing. Pulsed-laser deposited AlN was found to protect the GaN surface effectively, for microwave annealing at temperatures as high as 1500 °C. The RMS surface roughness (0.6 nm) of the GaN sample annealed at 1500 °C with an AlN cap is similar to the value (0.3 nm) measured on the as-grown sample with a decrease in the compensating deep donor concentration. Cubic 3C-SiC nanowires were grown by a novel Fe, Ni, Pd, and Pt metal catalystassisted sublimation-sandwich (SS) method. The nanowire growth was performed in a nitrogen atmosphere, in the temperature range of 1650 °C to 1750 °C for 40 s durations. The nanowires grow by the vapor-liquid-solid (VLS) mechanism facilitated by metal catalyst islands. The nanowires are 10 [micrometer] to 30 [micrometer] long with about 52% of them having diameters in the range of 15 nm -- 150 nm, whereas 14% of the nanowires had diameters in excess of 300 nm"--Abstract

Download or read book Ion Implantation Annealing Charact4rization and Device Development in Beta silicon Carbide Single Crystalline Thin Films written by Jaesok Ryu and published by . This book was released on 1986 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Ion Implanted Silicon Carbide written by and published by . This book was released on 2004 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects that introduce electrically active deep levels in ion-implanted Silicon Carbide (SiC) were studied by performing capacitance Deep- Level Transient- Spectroscopy (DLTS) and transconductance frequency dispersion measurements on fully implanted MESFETs in bulk semi-insulating 4-H SiC, MISFETs in 6-H SiC and double implanted p-n and n-p junction diodes in 4-H SiC. The junction diodes made with aluminum and phosphoms implantations exhibited higher reverse leakage current compared to those made by nitrogen and boron implantations. In all samples implanted with nitrogen a defect complex involving nitrogen and a point defect (introduced by the ion-implantation process) is observed with a trap level introduced at 0.51 eV above the valence band. Phosphoms implant-native defect related peaks are observed at 0.6 and 0.7 eV above the valence band. In all boron implanted samples, a prominent electrically active boron related D-center defect is seen at 0.62 eV above the valence band. In aluminum implanted samples an intrinsic vacancy related defect is seen at 0.78 eV above the valence band. Surface state related defects were observed in the N-implanted channel region at energies 0.18 eV, 0.3 eV and 0.4 eV. Several defects were observed in the gate insulator and insulator/channel interface.

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Ion Beam Modification of Solids written by Werner Wesch and published by Springer. This book was released on 2016-07-14 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modifications of solids. Ion beams are widely used to modify the physical properties of materials. A complete theory of ion stopping in matter and the calculation of the energy loss due to nuclear and electronic interactions are presented including the effect of ion channeling. To explain structural modifications due to high electronic excitations, different concepts are presented with special emphasis on the thermal spike model. Furthermore, general concepts of damage evolution as a function of ion mass, ion fluence, ion flux and temperature are described in detail and their limits and applicability are discussed. The effect of nuclear and electronic energy loss on structural modifications of solids such as damage formation, phase transitions and amorphization is reviewed for insulators and semiconductors. Finally some selected applications of ion beams are given.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book SRIM the Stopping and Range of Ions in Matter written by James F. Ziegler and published by Lulu.com. This book was released on 2008 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This is a textbook the gives the background of the stopping and range of ions in matter (www.SRIM.org). It is written to be the prime resource for those who use SRIM in scientific work."--Lulu.com.

Download or read book Metals Abstracts written by and published by . This book was released on 1996 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.