Download or read book Ion induced Damage in Si written by and published by . This book was released on 2006 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion induced Damage and Amorphization in Si written by and published by . This book was released on 1990 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs.
Download or read book Ion Beam Induced Damage Processes in Silicon written by Richard David Goldberg and published by . This book was released on 1995 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Bombardment Induced Damage and Annealing in Si written by Boudjemaa Zeroual and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Damage Growth in Si During Self ion Irradiation written by and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 /times/ 1014 cm/sup -2/) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs.
Download or read book Ion Solid Interactions written by Michael Nastasi and published by Cambridge University Press. This book was released on 1996-03-29 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive guide to an important materials science technique for students and researchers.
Download or read book Fundamentals of Radiation Materials Science written by GARY S. WAS and published by Springer. This book was released on 2016-07-08 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revised second edition of this established text offers readers a significantly expanded introduction to the effects of radiation on metals and alloys. It describes the various processes that occur when energetic particles strike a solid, inducing changes to the physical and mechanical properties of the material. Specifically it covers particle interaction with the metals and alloys used in nuclear reactor cores and hence subject to intense radiation fields. It describes the basics of particle-atom interaction for a range of particle types, the amount and spatial extent of the resulting radiation damage, the physical effects of irradiation and the changes in mechanical behavior of irradiated metals and alloys. Updated throughout, some major enhancements for the new edition include improved treatment of low- and intermediate-energy elastic collisions and stopping power, expanded sections on molecular dynamics and kinetic Monte Carlo methodologies describing collision cascade evolution, new treatment of the multi-frequency model of diffusion, numerous examples of RIS in austenitic and ferritic-martensitic alloys, expanded treatment of in-cascade defect clustering, cluster evolution, and cluster mobility, new discussion of void behavior near grain boundaries, a new section on ion beam assisted deposition, and reorganization of hardening, creep and fracture of irradiated materials (Chaps 12-14) to provide a smoother and more integrated transition between the topics. The book also contains two new chapters. Chapter 15 focuses on the fundamentals of corrosion and stress corrosion cracking, covering forms of corrosion, corrosion thermodynamics, corrosion kinetics, polarization theory, passivity, crevice corrosion, and stress corrosion cracking. Chapter 16 extends this treatment and considers the effects of irradiation on corrosion and environmentally assisted corrosion, including the effects of irradiation on water chemistry and the mechanisms of irradiation-induced stress corrosion cracking. The book maintains the previous style, concepts are developed systematically and quantitatively, supported by worked examples, references for further reading and end-of-chapter problem sets. Aimed primarily at students of materials sciences and nuclear engineering, the book will also provide a valuable resource for academic and industrial research professionals. Reviews of the first edition: "...nomenclature, problems and separate bibliography at the end of each chapter allow to the reader to reach a straightforward understanding of the subject, part by part. ... this book is very pleasant to read, well documented and can be seen as a very good introduction to the effects of irradiation on matter, or as a good references compilation for experimented readers." - Pauly Nicolas, Physicalia Magazine, Vol. 30 (1), 2008 “The text provides enough fundamental material to explain the science and theory behind radiation effects in solids, but is also written at a high enough level to be useful for professional scientists. Its organization suits a graduate level materials or nuclear science course... the text was written by a noted expert and active researcher in the field of radiation effects in metals, the selection and organization of the material is excellent... may well become a necessary reference for graduate students and researchers in radiation materials science.” - L.M. Dougherty, 07/11/2008, JOM, the Member Journal of The Minerals, Metals and Materials Society.
Download or read book In situ Observations of the Development of Heavy ion Damage in Semiconductors written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In-situ observations on ion-beam induced amorphisation of GaAs, GaP and Si are reported. Direct-impact amorphisation was found to occur in GaAs irradiated with 100-keV Xe ions to low doses at low temperature (approx. 40K) in contrast to previous room temperature irradiations. In GaP and in silicon, where heavy projectiles do cause direct impact amorphisation at room temperature, the evolution of the damage structure with ion-dose was studied. The defect yield both in GaP irradiated with 100-keV Kr ions and in Si irradiated with 100-keV Xe+ ions was found to decrease monotonically with increasing dose over the dose range 1015 to 1017 ions m−2.
Download or read book Damage Nucleation in Si During Ion Irradiation written by and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed.
Download or read book Radiation Induced Segregation in Light Ion Bombarded Ni 8 Si written by N. Packan and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced segregation (RIS) is an important area of current research because of potential detrimental effects including embrittlement. In this work, a quantitative assessment is made of radiation-induced silicon segregation to internal grain boundaries compared with that to the external surfaces. Tension specimens of Ni-8 atomic % Si have been irradiated at 750 K (475°C) with either 7-MeV protons or 28-MeV alpha particles to damage levels of 0.1 to 0.3 dpa. Postirradiation tension testing at 300, 720, or 975 K produces ductile failures with elongations > 15%. However specimens that had implantation of 250 to 1000 atomic ppm He at 975 K (700°C) before irradiation did fracture intergranularly when pulled at 975 K inside a scanning Auger microprobe, thereby exposing grain boundary surfaces for depth profile analysis. After correction for preferential sputtering effects, RIS of silicon to outer surfaces is found to give rise to a strongly enriched surface layer, 20 to 30 nm thick, followed by a shallow depletion zone for the next ~200 nm, in agreement with previous studies in the literature. By contrast, silicon segregation to fracture-exposed grain faces varies considerably from face to face but generally declines more gradually with little or no depletion zone. Observations of silicon profiles and Ni3Si formation at grain boundaries obtained by analytical transmission electron microscopy (TEM) generally confirm the Auger results.
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Download or read book Sub micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions written by and published by . This book was released on 2015 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 [mu]m2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
Download or read book Ion Irradiation Induced Damage in Nuclear Materials written by Diana Bachiller Perea and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the most important challenges in Physics today is the development of a clean, sustainable, and efficient energy source that can satisfy the needs of the actual and future society producing the minimum impact on the environment. For this purpose, a huge international research effort is being devoted to the study of new systems of energy production; in particular, Generation IV fission reactors and nuclear fusion reactors are being developed. The materials used in these reactors will be subjected to high levels of radiation, making necessary the study of their behavior under irradiation to achieve a successful development of these new technologies. In this thesis two materials have been studied: amorphous silica (a-SiO2) and magnesium oxide (MgO). Both materials are insulating oxides with applications in the nuclear energy industry. High-energy ion irradiations have been carried out at different accelerator facilities to induce the irradiation damage in these two materials; then, the mechanisms of damage have been characterized using principally Ion Beam Analysis (IBA) techniques. One of the challenges of this thesis was to develop the Ion Beam Induced Luminescence or ionoluminescence (which is not a widely known IBA technique) and to apply it to the study of the mechanisms of irradiation damage in materials, proving the power of this technique. For this purpose, the ionoluminescence of three different types of silica (containing different amounts of OH groups) has been studied in detail and used to describe the creation and evolution of point defects under irradiation. In the case of MgO, the damage produced under 1.2 MeV Au+ irradiation has been characterized using Rutherford backscattering spectrometry in channeling configuration and X-ray diffraction. Finally, the ionoluminescence of MgO under different irradiation conditions has also been studied.The results obtained in this thesis help to understand the irradiation-damage processes in materials, which is essential for the development of new nuclear energy sources.
Download or read book Application of Particle and Laser Beams in Materials Technology written by P. Misaelides and published by Springer Science & Business Media. This book was released on 1995-01-31 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of advanced materials with preselected properties is one of the main goals of materials research. Of especial interest are electronics, high-temperature and superhard materials for various applications, as well as alloys with improved wear, corrosion and mechanical resistance properties. The technical challenge connected with the production of these materials is not only associated with the development of new specialised preparation techniques but also with quality control. The energetic charged particle, electron and photon beams offer the possibility of modifying the properties of the near-surface regions of materials without seriously affecting their bulk, and provide unique analytical tools for testing their quality. Application of Particle and Laser Beams in Materials Technology provides an overview of this rapidly expanding field. Fundamental aspects concerning the interactions and collisions on atomic, nuclear and solid state scale are presented in a didactic way, along with the application of a variety of techniques for the solution of problems ranging from the development of electronics materials to corrosion research and from archaeometry to environmental protection. The book is divided into six thematic units: Fundamentals, Surface Analysis Techniques, Laser Beams in Materials Technology, Accelerator-Based Techniques in Materials Technology, Materials Modification and Synchrotron Radiation.
Download or read book Radiation Induced Modification of Materials written by Hardev Singh Virk and published by Trans Tech Publications Ltd. This book was released on 2015-08-20 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: The irradiation of materials with energetic particles has significant effects on the properties of target materials. In addition to the well-known detrimental effects of irradiations, they have also some beneficial effects on the properties of materials. Irradiation effect can change the morphology of the materials in a controlled manner and tailor their mechanical, structural, optical and electrical properties. Irradiation induced modifications in the properties of materials can be exploited for many useful applications. This 2nd volume on Radiation Effects considers the importance of Radiation Induced Modifications of Materials. It includes 9 Papers written by experts in this field on a variety of subjects.
Download or read book Radiation Damage in Materials written by Yongqiang Wang and published by MDPI. This book was released on 2020-12-28 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The complexity of radiation damage effects in materials that are used in various irradiation environments stems from the fundamental particle–solid interactions and the subsequent damage recovery dynamics after the collision cascades, which involves multiple length and time scales. Adding to this complexity are the transmuted impurities that are unavoidable from accompanying nuclear processes. Helium is one such impurity that plays an important and unique role in controlling the microstructure and properties of materials used in fast fission reactors, plasma-facing and structural materials in fusion devices, spallation neutron target designs, actinides, tritium-containing materials, and nuclear waste. Their ultra-low solubility in virtually all solids forces He atoms to self-precipitate into small bubbles that become nucleation sites for further void growth under radiation-induced vacancy supersaturations, resulting in material swelling and high-temperature He embrittlement, as well as surface blistering under low-energy and high-flux He bombardment. This Special Issue, “Radiation Damage in Materials—Helium Effects”, contains review articles and full-length papers on new irradiation material research activities and novel material ideas using experimental and/or modeling approaches. These studies elucidate the interactions of helium with various extreme environments and tailored nanostructures, as well as their impact on microstructural evolution and material properties.
Download or read book Electrical Characterization of Reactive Ionetching Induced Damage in Si and SiO2 written by Weizhong Wu and published by . This book was released on 1993 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
