Download or read book Investigations of the Properties of ZnO based TCO Thin Films Grown Via Rf Sputtering Deposition Method on Flexible Substrates for Thin film Transistor Applications written by 吳佳玲 and published by . This book was released on 2014 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Zinc Oxide Bulk Thin Films and Nanostructures written by Chennupati Jagadish and published by Elsevier. This book was released on 2011-10-10 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film

Download or read book Investigation of the Optical and Electrical Properties of ZnO based Thin Films Grown Via Sol gel Method for Thin film Transistor Application written by 蘇泊沅 and published by . This book was released on 2013 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanostructured Zinc Oxide written by Kamlendra Awasthi and published by Elsevier. This book was released on 2021-08-10 with total page 781 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured Zinc Oxide covers the various routes for the synthesis of different types of nanostructured zinc oxide including; 1D (nanorods, nanowires etc.), 2D and 3D (nanosheets, nanoparticles, nanospheres etc.). This comprehensive overview provides readers with a clear understanding of the various parameters controlling morphologies. The book also reviews key properties of ZnO including optical, electronic, thermal, piezoelectric and surface properties and techniques in order to tailor key properties. There is a large emphasis in the book on ZnO nanostructures and their role in optoelectronics. ZnO is very interesting and widely investigated material for a number of applications. This book presents up-to-date information about the ZnO nanostructures-based applications such as gas sensing, pH sensing, photocatalysis, antibacterial activity, drug delivery, and electrodes for optoelectronics. - Reviews methods to synthesize, tailor, and characterize 1D, 2D, and 3D zinc oxide nanostructured materials - Discusses key properties of zinc oxide nanostructured materials including optical, electronic, thermal, piezoelectric, and surface properties - Addresses most relevant zinc oxide applications in optoelectronics such as light-emitting diodes, solar cells, and sensors

Download or read book Reactive High Power Impulse Magnetron Sputtering of Zinc Oxide for Thin Film Transistor Applications written by Amber Nicole Reed and published by . This book was released on 2015 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an emerging thin film transistor (TFT) material for transparent flexible displays and sensor technologies, where low temperature synthesis of highly crystallographically ordered films over large areas is critically needed. This study maps plasma assisted synthesis characteristics, establishes polycrystalline ZnO growth mechanisms and demonstrates for the first time low-temperature and scalable deposition of semiconducting grade ZnO channels for TFT applications using reactive high power impulse magnetron sputtering (HiPIMS). Plasma parameters, including target currents, ion species and their energies were measured at the substrate surface location with mass spectroscopy as a function of pressure and applied voltage during HiPIMS of Zn and ZnO targets in O2/Ar. The results were correlated to film microstructure development investigated with x-ray diffraction, atomic force microscopy, scanning electron microscopy and transmission electron microscopy which helped establish film nucleation and growth mechanisms. Competition for nucleation by (100), (101) and (002) oriented crystallites was identified at the early stages of film growth, which can result in a layer of mixed crystal orientation at the substrate interface, a microstructural feature that is detrimental to TFT performance due to increased charge carrier scattering in back-gated TFT devices. The study revealed that nucleation of both (100) and (101) orientations can be suppressed by increasing the plasma density while decreasing ion energy. After the initial nucleation layer, the microstructure evolves to strongly textured with the (002) crystal plane oriented parallel to the substrate surface. The degree of (002) alignment was pressure-dependent with lower deposition pressures resulting in films with (002) alignment less than 3.3°, a trend attributed to less energy attenuation of the low energy (2- 6 eV) Ar+, O+, and O2+ ions observed with mass spectrometry measurements. At pressures of 7 mTorr and lower, a second population of ionized gas (Ar+, O+, and O2+) species with energies up to 50 eV appeared. The presence of higher energy ions corresponded with a bimodal distribution of ZnO grain sizes, confirming that high energy bombardment has significant implications on microstructural uniformity during large area growth. Based on the established correlations between process parameters, plasma characteristics, film structure and growth mechanisms, optimum deposition conditions for (002) oriented nanocrystalline ZnO synthesis at 150 °C were identified and demonstrated for both silicon oxide wafers of up to 4 inch diameter and on flexible polymer (Kapton) substrates. The feasibility of the low temperature processing of ZnO films for TFT applications was verified by preliminary tests with back-gated device prototypes. Directions of future research are outlined to further develop this low temperature growth method and apply results of this study for ZnO applications in semiconductor devices.

Download or read book Journal of the Electrochemical Society written by and published by . This book was released on 2009 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Spectroscopic Ellipsometry written by Hiroyuki Fujiwara and published by John Wiley & Sons. This book was released on 2007-09-27 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.

Download or read book Deposition of Al doped ZnO Films by High Power Impulse Magnetron Sputtering written by Martin Mickan and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting oxides (TCOs) are an important class of materials with many applications such as low emissivity coatings, or transparent electrodes for photovoltaics and flat panel displays. Among the possible TCO materials, Al-doped ZnO (AZO) is studied due to its relatively low cost and abundance of the raw materials. Thin films of AZO are commonly produced using physical vapour deposition techniques such as magnetron sputtering. However, there is a problem with the homogeneity of the films using reactive direct current magnetron sputtering (DCMS). This homogeneity problem can be related to the bombardment of the growing film with negative oxygen ions, that can cause additional acceptor defects and the formation of insulating secondary phases. In this work AZO films are deposited by high power impulse magnetron sputtering (HiPIMS), a technique in which high instantaneous current densities are achieved by short pulses of low duty cycle. In the first part of this thesis, the possibility to improve the homogeneity of the deposited AZO films by using HiPIMS is demonstrated. This improvement can be related to the high instantaneous sputtering rate during the HiPIMS pulses, so the process can take place in the metal mode. This allows for a lower oxygen ion bombardment of the growing film, which can help to avoid the formation of secondary phases. Another problem of AZO is the stability of the properties in humid environments. To assess this problem, the degradation of the electrical properties after an aging procedure was investigated for films deposited by both DCMS and by HiPIMS. A method was proposed, to restore the properties of the films, using a low temperature annealing under N2 atmosphere. The improvement of the electrical properties of the films could be related to a diffusion process, where water is diffusing out of the films. Then, the influence of the substrate temperature on the properties of AZO films deposited by HiPIMS was studied. The electrical, optical and structural properties were found to improve with increasing substrate temperature up to 600° C. This improvement can be mostly explained by the increase in crystalline quality and the annealing of defects. Finally, the deposition of AZO films on flexible PET substrates was investigated. The films are growing as a thick porous layer of preferentially c-axis oriented columns on top of a thin dense seed layer. The evolution of the sheet resistance of the films after bending the films with different radii was studied. There is an increase in the sheet resistance of the films with decreasing bending radius, that is less pronounced for thicker films.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1994 with total page 976 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atom Probe Tomography written by Williams Lefebvre and published by Academic Press. This book was released on 2016-05-30 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atom Probe Tomography is aimed at beginners and researchers interested in expanding their expertise in this area. It provides the theoretical background and practical information necessary to investigate how materials work using atom probe microscopy techniques, and includes detailed explanations of the fundamentals, the instrumentation, contemporary specimen preparation techniques, and experimental details, as well as an overview of the results that can be obtained. The book emphasizes processes for assessing data quality and the proper implementation of advanced data mining algorithms. For those more experienced in the technique, this book will serve as a single comprehensive source of indispensable reference information, tables, and techniques. Both beginner and expert will value the way the book is set out in the context of materials science and engineering. In addition, its references to key research outcomes based upon the training program held at the University of Rouen—one of the leading scientific research centers exploring the various aspects of the instrument—will further enhance understanding and the learning process. - Provides an introduction to the capabilities and limitations of atom probe tomography when analyzing materials - Written for both experienced researchers and new users - Includes exercises, along with corrections, for users to practice the techniques discussed - Contains coverage of more advanced and less widespread techniques, such as correlative APT and STEM microscopy

Download or read book Effects of Thickness Variation on Properties of ZnO Al Thin Films Grown by RF Magnetron Sputtering Deposition written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Manufacturing Gallium Doped ZnO Thin Films Suitable for Use in Thin Film Transistors Using Unbalanced Magnetron Sputtering written by Timothy Russell Jones and published by . This book was released on 2013 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium doped zinc oxide (GZO) thin films were deposited onto Si (100) substrates. Depositions were performed at relatively low temperatures suitable for use in manufacturing thin films on plastic substrates. Substrates were thermally oxidized, and then thin films were deposited via radio frequency (RF) unbalanced magnetron sputtering. ZnO thin films were also sputtered in order to act as a seed layer for growing nanostructures by the hydrothermal method. Sputtering parameters evaluated independently include pressure, gas composition, power, temperature and the presence of an external magnetic field. Scanning electron microscopy (SEM) was performed on hydrothermally produced samples. Sputtered films used to compare sputtering parameters were grown at thicknesses of 33-64 nm as measured by ellipsometry. The GZO sputtering target had a 5% gallium content, which was deposited on the thin films. This was confirmed by X-ray Photoelectron Spectroscopy (XPS). Films were also evaluated using Raman spectroscopy and four-point probe terminal sensing. Using a comparison of the X-ray diffraction (XRD) of the films, it was possible to evaluate the sputtering parameters in order to minimize their crystallite size. It was calculated that the optimum power to apply to the target in order to minimize crystallite size was 128W. Films also minimized crystallite size by several other independent factors, such as not being in the presence of oxygen, being in the presence of an external magnetic field, being at a higher temperature, or being at a higher pressure during sputtering.

Download or read book Investigation of the Optical and Electrical Properties of ZnO based Transparent Conducting Thin Films on Flexible Substrates written by 蔡宜君 and published by . This book was released on 2011 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrications and Investigations of ZnO Based TCO and TFTs by Rf Sputtering Deposition Method written by 陳孟群 and published by . This book was released on 2014 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Film Electronics with Novel Materials written by Yiyang Gong and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Novel materials, including zinc oxide (ZnO) and 2D transition metal dichalcogenides (TMDs), have been investigated in this dissertation for the realization of high-performance large-area integrated circuits. These novel materials may provide differential advantages over the established large-area thin film technology based on silicon, which has been extensively employed in applications such as large-area flat panel displays, high-speed active matrix thin film circuits, flexible and wearable electronics, etc. The dissertation begins with the discussion of high-performance plasma-enhanced atomic layer deposition (PEALD) of ZnO thin films and ZnO thin film transistors (TFTs) with a field effect mobility of ~ 10 to 20 cm2/Vs, which have been demonstrated. Offset-drain ZnO TFTs, which are able to withstand or switch voltage beyond 80 V, have also been demonstrated. These results shed light on the realization of large-area active-matrix circuits beyond the capabilities of the current display industry where high circuit speed or high operation voltage is required. To further improve the performance of ZnO-based electronics, many related materials, including doped ZnO, zinc nitride, and aluminum nitride, have been investigated. Doped ZnO has been proposed as the carrier injection layer that can improve the conductivity of metal-semiconductor contact in ZnO TFTs. Aluminum-doped ZnO thin films have been deposited using triisobutyl aluminum (TIBA) as the dopant precursor instead of trimethyl aluminum (TMA) in order to improve the uniformity of dopant distribution because TIBA has much lower vapor pressure than TMA. AZO thin films with resistivity ~ 10-2 cm have been achieved by PEALD. Besides, aluminum nitride and zinc nitride thin films have also been studied using PEALD. In addition to the showerhead PEALD system, a novel inductively coupled plasma ALD system has been designed and set up that provides RF power up to 500 W in order to generate a highly reactive nitrogen plasma source and enable the deposition of high-quality metal nitride at relatively low temperature. These metal nitride thin films may provide additional building blocks to enhance the speed and thermal stability of ZnO-based thin film devices and circuits.Owing to their excellent electrical and mechanical properties, 2D-TMD thin films have been studied for flexible electronics applications. High quality MoS2 and WS2 thin films have been achieved via mechanical exfoliation and chemical vapor deposition. To fabricate MoS2- and WS2-based TFTs, a 5-step device fabrication process has been developed, which is compatible to both the conventional rigid substrate and the ~ 4.8 nm thick solution-cast polyimide (PI) flexible substrate. The MoS2 and WS2 TFTs fabricated on PI substrate exhibit a field effect mobility of between 1 to 20 cm2/Vs, which is similar to that of those fabricated on rigid silicon substrate. More importantly, extraordinary mechanical strength and stability have been demonstrated for MoS2 and WS2 TFTs fabricated on PI substrate. A reasonably small degradation in device performance has been observed in these flexible 2D-TMD TFTs under static bending to the radius of ~ 2mm and after cyclic bending up to 100,000 cycles. Finally, attempts to create integratable 2D-TMD circuits have been demonstrated. To realize large-area 2D-TMD based circuits, growth of wafer-scale continuous WSe2 thin films has been demonstrated using metal organic chemical vapor deposition (MOCVD). Deposition has been achieved at as low as 400 C, which allows deposition on glass and polymeric substrate and enables the transfer-free fabrication of WSe2 TFTs and circuits on arbitrary platforms. Patterning and post-growth thickness modulation of continuous WSe2 thin film have been demonstrated using CF4 plasma and O2 plasma, whereby high-speed etching and nanometer-scale film thinning can be realized. With the capability of depositing and patterning wafer-scale WSe2 thin films, an array of p-channel WSe2 TFTs have been fabricated with a field effect mobility of ~0.01 cm2/Vs and an on-off ratio greater than 104.

Download or read book Thin Film Silicon Solar Cells written by Arvind Victor Shah and published by CRC Press. This book was released on 2010-08-19 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin

Download or read book Investigation of Oxide Semiconductor Based Thin Films written by Meena Suhanya Rajachidambaram and published by . This book was released on 2012 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO2/Si substrates and then annealed in air between 100 and 600 °C. Significant nanostructural changes were observed for the resulting films, particularly those from larger Zn nanoparticles. These nanostructures, including nanoneedles and nanorods, were likely formed due to fracturing of ZnO outer shell due to differential thermal expansion between the Zn core and the ZnO shell. At temperatures above 227 °C, the metallic Zn has a high vapor pressure leading to high mass transport through these defects. Ultimately the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. We have found that the resulting films annealed above 400 °C had high electrical resistivity. The zinc nanoparticles were incorporated into zinc indium oxide solution and spin-coated to form thin film transistor (TFT) test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing. The functionalization of zinc tin oxide (ZTO) films with self-assembled monolayers (SAMs) of n-hexylphosphonic acid (n-HPA) was investigated. The n-HPA modified ZTO surfaces were characterized using contact angle measurement, x-ray photoelectron spectroscopy (XPS) and electrical measurements. High contact angles were obtained suggesting high surface coverage of n-HPA on the ZTO films, which was also confirmed using XPS. The impact of n-HPA functionalization on the stability of ZTO TFTs was investigated. The n-HPA functionalized ZTO TFTs were either measured directly after drying or after post-annealing at 140 °C for 48 hours in flowing nitrogen. Their electrical characteristics were compared with that of non-functionalized ZTO reference TFTs fabricated using identical conditions. We found that the non-functionalized devices had a significant turn-on voltage (V[subscript ON]) shift of ~0.9 V and ~1.5 V for the non-annealed and the post-annealed conditions under positive gate bias stress for 10,000 seconds. The n-HPA modified devices showed very minimal shift in V[subscript ON] (0.1 V), regardless of post-thermal treatment. The VON instabilities were attributed to the interaction of species from the ambient atmosphere with the exposed ZTO back channel during gate voltage stress. These species can either accept or donate electrons resulting in changes in the channel conductance with respect to the applied stress.