Download or read book Investigation of Normal Incident High Performance P type Strained Layer InGaAs AlGaAs and GaAs AlGaAs Quantum Well Infrared Photodetectors written by and published by . This book was released on 1995 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressively strained p-type InGaAs/AlGaAs QWIP grown on GaAs by MBE with very low dark current densities. This new QWIP achieved two color detection with detection peaks at 7.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 67 K, with operation possible at temperatures greater than 85 K. The measured responsivity was found to be 40 mA/W for the LWIR peak, while a responsivity of 8 mA/W was found for the MWIR peak; all at T=77 K. In addition, the measured detectivity was found to be 1.06 x 10(exp 10) Jones at T=81 K and 1.0 V of applied bias. In addition, two new compressively strained p-QWIPs with detection peaks at 9.2 micrometers and 10.1 micrometers were characterized. Responsivities of 28 mA/W at T=45 K and V=-2.5 V and 1% mA/W at T=55 K and -1.0 V were measured at the 9.2 micrometers and 10.1 micrometers peaks respectively. The 9.2 micrometers p-QWIP has an estimated D* of 2.7 x 1O(exp 9) Jones, while the 10.1 micrometers peak p-QWIP has an estimated D*-of 1.04 x 10(exp 9) Jones. Finally, a Si-doped unstrained p-QWIP grown on (311) Si GaAs was characterized. This p-QWIP exhibits extremely symmetrical dark current characteristics and has two MWIR detective peaks at 3.0 micrometers and 5.2 micrometers. jg p.2.
Download or read book Pjse o Theofilowi na geho swatb Angel Rafael byl a kterak od n ho zase k rozkossjm ragsk m gsa pozw n 360 let tam bydlel written by and published by . This book was released on 1775 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of a Normal Incident High Performance P type Strained Layer In 0 3 Ga 0 7 As In 0 52 Al 0 48 As Quantum Well Infrared Photodetector written by and published by . This book was released on 1995 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 um an 8.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Th addition, a new InGaAs/AlGaAs on GaAs compressionally strained p QWIP was developed which exhibits extremely low dark currents and comparable responsivities when compared with the previous PCSL-QWIP. The measured responsivity was found to be 38 mA/W an 8mA/W at T=77 K, with the detective peaks at 7A and 5.5 micrometers, respectively. The detector is under BLIP conditions at T=63 K with applied biases from -3 V to +3 V. (jg).
Download or read book Investigation of a Normal Incidence High Performance P Type Strained Layer In 0 3 Ga 0 7 As In 0 52 Al 0 48 As Quantum Well Infrared Photodetector written by and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 microns and 8. 4 microns in the LWIR band and 5.5 microns in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Additional characterization on the tensile strain InGaAs/InAlAs on InP P-QWIP has been performed and the results are summarized in this report. Currently, we are investigating other possible p-type QWIP structures with different performance parameters. These include a new dual strained InGaAs/ InAlAs p-type QWIP. Additional consideration is being given towards the reliability of p-type contacts and the strained layer material for these QWIP structures P-type strained layer InGaAs/InAlAs Quantum Well Infrared Photodetectors (QWIPs), Intersubband absorption, Dark current, Responsivity, Detectivity.
Download or read book Intersubband Transitions in Quantum Wells Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Download or read book Investigation of a Normal Incidence High Performance P Type Strained Layer In 0 3 Ga 0 7 As In 0 52 Al 0 48 As Quantum Well Infrared Photodetector written by Max N. Yoder and published by . This book was released on 1994 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 microns and 8. 4 microns in the LWIR band and 5.5 microns in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Additional characterization on the tensile strain InGaAs/InAlAs on InP P-QWIP has been performed and the results are summarized in this report. Currently, we are investigating other possible p-type QWIP structures with different performance parameters. These include a new dual strained InGaAs/ InAlAs p-type QWIP. Additional consideration is being given towards the reliability of p-type contacts and the strained layer material for these QWIP structures P-type strained layer InGaAs/InAlAs Quantum Well Infrared Photodetectors (QWIPs), Intersubband absorption, Dark current, Responsivity, Detectivity.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1997 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Well Intersubband Transition Physics and Devices written by Hui C. Liu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1995 with total page 1712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Detectors Focal Plane Arrays and Imaging Devices II written by Pingzhi Liang and published by SPIE-International Society for Optical Engineering. This book was released on 1998 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of works on detectors, focal plane arrays, and imaging devices contains 48 papers on such topics as MBE growth of HgCdTe for infrared focal plane arrays and the application of visibility to evaluate and analyze thermal images under obscured infrared smokescreen conditions.
Download or read book Infrared Applications of Semiconductors III written by Mahmoud Omar Manasreh and published by . This book was released on 2000 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Infrared Applications of Semiconductors written by and published by . This book was released on 2000 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Infrared Detectors and Focal Plane Arrays written by and published by . This book was released on 1994 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
