Download or read book Investigation of Growth Structural and Electronic Properties of V 1tn2O 1tn3 Thin Films on Selected Substrates written by Alexei Nateprov and published by . This book was released on 2006 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Growth Structural and Electronic Properties of V2O3 Thin Films on Selected Substrates written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The present work is devoted to the experimental study of the MI transition in V2O3 thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V2O3 thin films on substrates with different electrical and structural properties (diamond and LiNbO3), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V2O3 was investigated by SAW using first directly deposited V2O3 thin film onto a LiNbO3 substrate.

Download or read book Investigation of Growth Structural and Electronic Properties of V 1tn2O 1tn3 Thin Films on Selected Substrates written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Film Metal Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.

Download or read book GROWTH OF TRANSITION METAL DIC written by Lu Jiao and published by Open Dissertation Press. This book was released on 2017-01-26 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growth of Transition Metal Dichalcogenide Thin Films by Molecular Beam Epitaxy" by Lu, Jiao, 焦璐, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Atomically thin transition metal dichalcogenides (TMD) have attracted intensive research interests due to their extraordinary properties and potential applications in electronics and optoelectronics. In this thesis, epitaxial growths of two-dimensional (2D) MoSe2 and WSe2 thin films were carried out in Molecular Beam Epitaxy (MBE). Multiple characterization techniques were employed to investigate thin films' structural, morphological, electronic and optical properties. A series of submonolayer MoSe2 coverage samples have been grown on highly ordered pyrolytic graphite (HOPG) substrate. Growth temperature and post-growth annealing temperature were seen to have obvious impacts on film's morphology and crystal quality. Layer-by-layer growth mode has been identified for the Van der Waals epitaxy of MoSe2 on HOPG. Dense networks of inversion domain boundaries (IDBs) have been observed in as-grown MoSe2 epifilms by scanning tunneling microscopy (STM) and transmission electron microscopy (TEM), and their density can be tuned by changing the MBE conditions. Scanning tunneling spectroscopy (STS) measurements reveal mid-gap electronic states associated with the IDB defects. STS measurements also reveal energy bandgaps of monolayer (ML) and bilayer (BL) MoSe2. ML WSe2 thin films were also grown at varying conditions on HOPG substrates through the Van der Waals epitaxy process and the growth characteristics were found similar to that of MoSe2. However, differences are also noted, particularly about the IDB defects. Contrary to MoSe2, as-grown WSe2 films do not contain the line defects. The reason behind such differences will be discussed. Finally, besides the STM/S studies about the morphological and electronic properties of MBE MoSe2 and WSe2 films, high quality samples have been synthesized on graphene-on-SiC substrate with reduced defect density and well-controlled thicknesses for some ex situ characterizations by photoluminescence and Raman spectroscopy methods. The results will be summarized and discussed in this thesis. Subjects: Molecular beam epitaxy Metallic films

Download or read book Thin Film Growth Techniques for Low Dimensional Structures written by R.F.C. Farrow and published by Springer. This book was released on 1987-12 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Download or read book Electronics Research Program Investigation of Electronic Properties of Thin Films written by F. L. Vernon and published by . This book was released on 1963 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of a variety of parameters on the formation of metallic stearate films are discussed. Substrate cleaning techniques and the role of the spreading solvent are emphasized. A new method for the deposition of the initial organic monolayer is described; in many respects this method has proven superior to the original Langmuir-Blodgett technique. Reliable metaloxide tunneling junctions on the end of thin quartz rods were fabricated for configurations of the type Al-Al2O3-Mx. These junctions, used in studying the effect of microwave phonons on superconductive tunneling, proved difficult to make because of the small configurations required. Special techniques for handling these small structures are discussed. A new evaporator is described which will provide flexibility in fabricating thin film electronic devices. (Author).

Download or read book Borophosphosilicate Glass Thin Films in Electronics written by Vladislav I︠U︡rʹevich Vasilʹev and published by Nova Science Publishers. This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive monograph summarises the 30-year studies of borophosphosilicate glass (BPSG) thin film used in electronic technologies, including the authors personal experience with the film deposition, characterisation, and implementation in microelectronic technology. The main core of the monograph is the interrelation of chemical vapour deposition (CVD) kinetic features, thin film material properties, and electronic device technology aspects. Part one of the monograph is devoted to the analysis of thin film synthesis, such as: CVD methodology and BPSG film processes, silicon dioxide and glass film growth kinetics, CVD step coverage and gap-fill features. Part two of the book is a description of BPSG film properties, film structure, glass flow capability, BPSG film-moisture interaction and the film defect formation phenomenon. A number of experimental data are presented and discussed in detail.

Download or read book Metal Based Thin Films for Electronics written by Klaus Wetzig and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.

Download or read book Metal Oxide Based Thin Film Structures written by Nini Pryds and published by Elsevier. This book was released on 2017-09-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials.

Download or read book Growth and Characterization of Sr2FeMoO6 Thin Films on Ceramic Substrates written by Santosh Kumar Myana and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition metal oxide heterostructures are known to have shown a wide range of phenomenal properties such as superconductivity, colossal magnetoresistance and multiferroicity. The double perovskite Sr2FeMoO6 (SFMO) is reported to be a ferrimagnetic with high Curie temperature (410 - 450 K), which exhibits an appreciable low field magnetoresistance (LFMR) even at room temperature. Most of the thin film systems are prepared on single crystal substrates such as SrTiO3, LaAlO3, MgO and some limited compositions with few low index orientations available. Here, we used a throughput synthesis technique called Combinatorial Substrate Epitaxy , where we deposit thin films on isostructural polycrystalline substrates, using optimized deposition conditions. We investigate the deposition of SFMO thin films on three different polycrystalline substrates such as Sr2MgWO6 (SMWO), Ba2MgWO6 (BMWO) and Ca2MgWO6 (CMWO), and correlate the structural and electronic properties with the compositions, the strains and nature of defects.

Download or read book Growth Structure and Dielectric Properties of SrTiO3 Thin Films on LaAlO3 Substrates written by Xin Wang and published by . This book was released on 1996 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation on the Growth and Characterization of Tin Sulfide 2D Thin Films written by Shifeng Wang and published by . This book was released on 2017 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two-dimensional (2D) materials have recently attracted increasing amount of research attention, because of their exotic characteristics of asymmetric connections in the bulk. They involve strong intra-layer covalent bonding and weak interlayer interactions consisting mainly of van der Waals forces. Consequently, there is almost no dangling bond at the interfaces and on the surfaces. In addition, strain is also nearly absent between the layers and at the interfaces between such materials. These features make 2D materials promising for modern electronic and optoelectronic devices with outstanding performances. In this thesis, the van der Waals epitaxial growth of 2D SnS thin films on 2D mica substrates and 2D templates such as a SnSe buffer layer, a Bi2Se3 conducting thin layer, had been investigated. In addition, preliminary devices based on these materials were fabricated to demonstrate their applications. Additionally, efforts on building all-2D van der Waals (vdW) heterostructures have also been made. The van der Waals epitaxial growth of 2D materials was carried out using mica as substrates, which also possesses 2D layered structure exhibiting flexible, transparent, and insulating properties at low price. Molecular Beam Epitaxial (MBE) grown SnS thin films on mica substrates with excellent film quality were achieved, reflected by the narrow full width at half maximum (FWHM) of 0.1° in X-ray diffraction rocking curve. Analysis of this all-2D-layer stacking with the help of interface model was developed, to better understand the van der Waals epitaxial growth mechanism and facilitate further improvement of the film quality. Utilization of SnSe buffer layer significantly modified the growth mechanism by effectively aligning the lateral growth orientations, thereby enhancing the electrical property with lowered defect density within the films. To fundamentally reduce the native point defects caused by the tin deficiency in the films, a simultaneous tin compensation source was adopted. Apart from the great enhancement in the electrical property, the crystal structure also bore a resemblance to that with SnSe buffer layer. The FWHM of Sn-compensated SnS film exhibited a record low value between 0.07° and 0.04°, implying an extremely high film quality. Additionally, an about 67% increase in Hall mobility was accomplished in the film. The Sn-compensated SnS/GaN:Si heterojunction devices were fabricated to demonstrate the positive effect of Sn compensation, as well as the feasibility of SnS as optoelectronic applications. The SnS 2D thin films with high quality and tunable properties hold great potential for optoelectronic devices with better performances.

Download or read book Impact of Substrate on Structure and Electrical Properties in Pb based Ferroelectric Thin Films written by Nagarajan Valanoor and published by . This book was released on 2001 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Substrate Effect for Correlated Chalcogenide Thin Films written by Tao Jia and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The intersection between correlated electron systems and thin films provides exciting research opportunities. Quantum confinement effects, interfacial interactions and other substrate effects can be engineered to acquire desired physical properties in heterostructures. A brief introduction of the correlated electron problem and thin film research is presented in Chapter 1. To create and characterize complex thin films, precise tools for film growth and electron property measurement are needed. We provide an experimentalist's introduction of two major experimental tools in this dissertation: Angle-resolved Photoemission Spectroscopy (ARPES) for electronic property measurement (Chapter 2) and Molecular Beam Epitaxy (MBE) for thin film growth (Chapter 3). Monolayer (1ML) FeSe films on SrTiO$_3$ (STO) substrates demonstrate a large increase in electron doping and superconducting transition temperature. This is an example of how thin films and interfaces provide new opportunities in correlated electron systems. We use our MBE-ARPES chamber to grow and study FeSe films on various substrates in order to elucidate the reason behind this superconductivity enhancement. In Chapter 4, we describe the fabrication and study of 1ML FeSe/TiO$_2$ (rutile). By comparing 1ML FeSe/TiO$_2$ to 1ML FeSe/STO and other superconductors in iron chalcogenide family, we argue that doping and interfacial electron-phonon interaction are the two key factors to the enhanced superconductivity. In Chapter 5, we further study the origin of the doping effects in 1ML FeSe/titanate thin films using a versatile platform: 1ML FeSe/LaTiO$_3$ (LTO) /STO. To our surprise, although the charge density of two-dimensional electron gases (2DEGs) on LTO/STO can be increased to a few times higher than FeSe carrier density, the doping of 1ML FeSe on top of LTO/STO heterostructure does not increase. This provides strong confinements to theories that aim to explain the doping of 1ML FeSe/titanates. Our research on 1ML FeSe with TiO$_2$ and LTO/STO as substrates helps researchers understand the origin of increased superconductivity in this material system and provides insights on how to apply similar mechanisms to other materials. We switch gears and discuss the substrate effects for TiSe$_2$/TiO$_2$ heterostructure in Chapter 6. TiSe$_2$, both as bulk single crystals and as thin films on graphene, is in an ordered charge density wave (CDW) state at low temperatures. We find that hexagonal TiSe$_2$ can be grown epitaxially on tetragonal TiO$_2$ substrates, and the resulting films show large electron doping and no CDW order. Our further experiments demonstrate that the doping and suppression of CDW order is due to Se vacancies, which are created by substrate induced change in the film growth condition. This indirect substrate effect of doping may be applied to other transition metal dichalcogenide (TMDC) films on transition metal oxide (TMO) substrates as a powerful way to tune the electrical and optical properties of such heterostructures. This dissertation is summarized in Chapter 7, where we also propose possible future investigations based on this work. With quantitative understanding and precise control of thin film growth in MBE and advanced \textit{in situ} ARPES for measurements, our strength in creating and understanding correlated electron systems will be further improved.

Download or read book Thin Film Growth by Combinatorial Epitaxy for Electronic and Energy Applications written by Deepak Kumar and published by . This book was released on 2019 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition-metal oxides with an ABO3 perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. The epitaxial strain engineering in oxide thin films is an important mean to tailor the crystal lattice distortion through cooperative Jahn Teller effect. Using the Jahn Teller active PrVO3 thin films as a model system, the structural correlation with the magnetism is established. We impose different strength of epitaxial strain in PrVO3 thin films via different means, such as, using various commercially available single crystal substrates, film thickness, substrates with different crystal surface orientations, etcetera. As a result, new and hidden phases that are absent in the bulk compound, begin to appear. Namely, the compressive strain in PrVO3 films enhances the super-exchange interaction leading to an increased antiferromagnetic Neel temperature, a strong magnetic anisotropy in PrVO3 thin films grown on (001)-, (110)- and (111)-oriented SrTiO3 substrates, are few examples.

Download or read book Multiscale Modelling of Structural and Electronic Properties of Organic Thin Films written by Florian Steiner and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: