Download or read book Defects and Diffusion in Ceramics written by and published by . This book was released on 2003 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of High Performance Piezoelectric AlScN for Microelectromechanical Systems Towards a Ferroelectric Wurtzite Structure written by Simon Fichtner and published by BoD – Books on Demand. This book was released on 2020-02-18 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The usage of piezoelectric and ferroelectric thin films is a promising approach to significantly increase the functionality of microelectromechanical systems (MEMS) as well as of microelectronics in general. Since the device performance thus becomes directly connected to the properties of the functional film, new as well as improved piezoelectric and ferroelectric materials can allow substantial technological innovation. This dissertation focused on enhancing the piezoelectric properties of AlN by forming solid solutions with ScN and includes the first experimental observation of ferroelectricity in AlScN, and thus the first discovery of ferroelectricity in a III-V semiconductor based material in general. Compared to AlN, piezoelectric coefficients that are up to 450% higher were realized in AlScN, with d33f reaching a maximum of 17.2 pm/V and e31f reaching 3.2 C/m2. In this context, the identification and subsequent rectification of a major morphological instability in AlScN that becomes more pronounced with increasing Sc content was reported. Thus, films free of morphological inhomogeneities with close to ideal piezoelectric properties could be deposited up to 0.43% ScN. Control of the intrinsic film stress was demonstrated over a wide range from strongly tensile to strongly compressive for all the investigated Sc contents. The improved piezoelectric coefficients together with the possibility of stress control allowed the fabrication of suspended MEMS structures with electromechanical coupling coefficients improved by more than 320% relative to AlN. Ferroelectrictiy in AlScN was observed starting at ScN contents of 27%. Its emergence was connected to the same gradual evolution from the initial wurtzite structure to the layered hexagonal structure that also causes the enhanced piezoelectric coefficients while increasing the Sc content. Ferroelectric AlScN allowed the first experimental observation of the spontaneous polarization of the wurtzite structure and confirms that this polarization is more than one order of magnitude above most previous theoretical predictions. The large, tunable coercive fields and polarization constants together with the broad linear strain intervals, a paraelectric transition temperature above 600°C as well as the technological compatibility of the III-nitrides lead to a combination of exceptional properties that was previously inaccessible in ferroelectric thin films.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2002 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III Nitride Based Semiconductor Electronics and Optical Devices and Thirty Fourth State of the Art Program on Compound Semiconductors SOTAPOCS XXXIV written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transmission Electron Microscopy written by C. Barry Carter and published by Springer. This book was released on 2016-08-24 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Semiconductor Nanostructures written by Dieter Bimberg and published by Springer Science & Business Media. This book was released on 2008-06-03 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2007 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Springer Handbook of Microscopy written by Peter W. Hawkes and published by Springer Nature. This book was released on 2019-11-02 with total page 1561 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book features reviews by leading experts on the methods and applications of modern forms of microscopy. The recent awards of Nobel Prizes awarded for super-resolution optical microscopy and cryo-electron microscopy have demonstrated the rich scientific opportunities for research in novel microscopies. Earlier Nobel Prizes for electron microscopy (the instrument itself and applications to biology), scanning probe microscopy and holography are a reminder of the central role of microscopy in modern science, from the study of nanostructures in materials science, physics and chemistry to structural biology. Separate chapters are devoted to confocal, fluorescent and related novel optical microscopies, coherent diffractive imaging, scanning probe microscopy, transmission electron microscopy in all its modes from aberration corrected and analytical to in-situ and time-resolved, low energy electron microscopy, photoelectron microscopy, cryo-electron microscopy in biology, and also ion microscopy. In addition to serving as an essential reference for researchers and teachers in the fields such as materials science, condensed matter physics, solid-state chemistry, structural biology and the molecular sciences generally, the Springer Handbook of Microscopy is a unified, coherent and pedagogically attractive text for advanced students who need an authoritative yet accessible guide to the science and practice of microscopy.
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Nitrides with Nonpolar Surfaces written by Tanya Paskova and published by John Wiley & Sons. This book was released on 2008-03-31 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text discusses in detail the present stage of development of nonpolar nitrides, with special emphasis on the three main topics of crystal growth, properties, and device studies. All nonpolar nitride materials and all known growth techniques which are currently under strong investigation are covered.
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Liquid Cell Electron Microscopy written by Frances M. Ross and published by Cambridge University Press. This book was released on 2017 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: 2.6.2 Electrodes for Electrochemistry
