Download or read book Investigation for The Electrical and Ptical Properties of Antimony Doped ZnO Films Grown by RF Sputtering written by 游力蓁 and published by . This book was released on 2005 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Optical and Electrical Properties of Pure and Doped Zinc Oxide Films by RF Sputtering Method written by 賴豊文 and published by . This book was released on 2009 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optimisation of ZnO Thin Films written by Saurabh Nagar and published by Springer. This book was released on 2017-05-22 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results.
Download or read book Investigation of Doped ZnO by Molecular Beam Epitaxy for N and P type Conductivity written by Huiyong Liu and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents an investigation of the properties, especially the electrical properties, of doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) under different conditions. The interest in investigating ZnO films is motivated by the potential of ZnO to replace the currently dominant ITO in industries as n-type transparent electrodes and the difficulty in achieving reliable and reproducible p-type ZnO. On the one hand, n-type ZnO heavily doped with Al or Ga (AZO or GZO) is the most promising to replace ITO due to the low cost, abundant material resources, non-toxicity, high conductivity, and high transparency. On the other hand, ZnO doped with a large-size-mismatched element of Sb (SZO) or co-doped with N and Te exhibits the possibility of achieving p-type ZnO. In this dissertation, the effects of MBE growth parameters on the properties of GZO have been investigated in detail. The ratio of oxygen to metal (Zn+Ga) was found to be critical in affecting the structural, electrical, and optical properties of GZO layers as revealed by x-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurement, photoluminescence (PL), and transmittance measurements. Highly conductive (~2×10-4 [omega]-cm) and transparent GZO films (> 90% in the visible spectral range) were achieved by MBE under metal-rich conditions (reactive oxygen to incorporated Zn ratio 1). The highly conductive and transparent GZO layers grown under optimized conditions were applied as p-side transparent electrodes in InGaN-LEDs, which exhibited many advantages over the traditional thin semi-transparent Ni/Au electrodes. The surface morphologies of GaN templates were demonstrated to be important in affecting the structural and electrical properties of GZO layers. In those highly conductive and transparent GZO layers with high-quality crystalline structures, studies revealed ionized impurity scattering being the dominant mechanism limiting the mobility in the temperature range of 15-330 K, while polar optical phonon scattering being the mechanism responsible for the temperature-dependence for T150 K. The majority Sb ions were found to reside on Zn sites instead of O sites for lower Sb concentrations (~0.1 at.%), which can lead to a high electron concentration of above 1019 cm-3 along with a high electron mobility of 110 cm2/V-s at room temperature. The reduction in electron concentration and mobility for higher Sb concentrations (~1 at.%) was caused by the deterioration of the crystalline quality. ZnO co-doped with N and Te was also studied and the advantages of the co-doping technique and problems in achieving p-type conductivity are discussed.
Download or read book Structural Electrical and Optical Properties of Transparent Conducting Si doped ZnO Thin Films Grown by Pulsed Laser Deposition written by and published by . This book was released on 2009 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1997 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of the Optical and Electrical Properties of ZnO based Thin Films Grown Via Sol gel Method for Thin film Transistor Application written by 蘇泊沅 and published by . This book was released on 2013 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Future of Semiconductor Oxides in Next Generation Solar Cells written by Monica Lira-Cantu and published by Elsevier. This book was released on 2017-09-19 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Future of Semiconductor Oxides in Next-Generation Solar Cells begins with several chapters covering the synthesis of semiconductor oxides for NGSCs. Part II goes on to cover the types and applications of NGSCs currently under development, while Part III brings the two together, covering specific processing techniques for NGSC construction. Finally, Part IV discusses the stability of SO solar cells compared to organic solar cells, and the possibilities offered by hybrid technologies. This comprehensive book is an essential reference for all those academics and professionals who require thorough knowledge of recent and future developments in the role of semiconductor oxides in next generation solar cells. - Unlocks the potential of advanced semiconductor oxides to transform Next Generation Solar Cell (NGSC) design - Full coverage of new developments and recent research make this essential reading for researchers and engineers alike - Explains the synthesis and processing of semiconductor oxides with a view to their use in NGSCs
Download or read book Electrical Properties of ZnO A1 Films Grown by RF Magnetron Sputtering written by Yang Yu and published by . This book was released on 2003 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Zinc Oxide written by Claus F. Klingshirn and published by Springer Science & Business Media. This book was released on 2010-07-01 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book gives a comprehensive review of the present state-of-the-art in ZnO R+D, including growth, doping, lattice dynamics, electric magnetic and optical properties. The emphasis is on the electric and optical properties, because this is the area where novel applications may be expected with highest promise. The book highlights not only the most recent results but gives both an overview of past research and of the present status -- not avoiding critical and controversial discussions of various aspects such as bank symmetries and laser processes. Intended to have long-lasting impact on ZnO R+D, this monograph addresses (post-)graduate students but also advanced scientists, who want to embark on ZnO research or are already involved, the present state of the art and assists them in avoiding duplication of old results (or mistakes).
Download or read book Investigations of the Properties of ZnO based TCO Thin Films Grown Via Rf Sputtering Deposition Method on Flexible Substrates for Thin film Transistor Applications written by 吳佳玲 and published by . This book was released on 2014 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microstructure Chemistry and Optical Properties in ZnO and ZnO Au Nanocomposite Thin Films Grown by DC reactive Magnetron Co sputtering written by William Adolfo Chamorro Coral and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition of Al doped ZnO Films by High Power Impulse Magnetron Sputtering written by Martin Mickan and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting oxides (TCOs) are an important class of materials with many applications such as low emissivity coatings, or transparent electrodes for photovoltaics and flat panel displays. Among the possible TCO materials, Al-doped ZnO (AZO) is studied due to its relatively low cost and abundance of the raw materials. Thin films of AZO are commonly produced using physical vapour deposition techniques such as magnetron sputtering. However, there is a problem with the homogeneity of the films using reactive direct current magnetron sputtering (DCMS). This homogeneity problem can be related to the bombardment of the growing film with negative oxygen ions, that can cause additional acceptor defects and the formation of insulating secondary phases. In this work AZO films are deposited by high power impulse magnetron sputtering (HiPIMS), a technique in which high instantaneous current densities are achieved by short pulses of low duty cycle. In the first part of this thesis, the possibility to improve the homogeneity of the deposited AZO films by using HiPIMS is demonstrated. This improvement can be related to the high instantaneous sputtering rate during the HiPIMS pulses, so the process can take place in the metal mode. This allows for a lower oxygen ion bombardment of the growing film, which can help to avoid the formation of secondary phases. Another problem of AZO is the stability of the properties in humid environments. To assess this problem, the degradation of the electrical properties after an aging procedure was investigated for films deposited by both DCMS and by HiPIMS. A method was proposed, to restore the properties of the films, using a low temperature annealing under N2 atmosphere. The improvement of the electrical properties of the films could be related to a diffusion process, where water is diffusing out of the films. Then, the influence of the substrate temperature on the properties of AZO films deposited by HiPIMS was studied. The electrical, optical and structural properties were found to improve with increasing substrate temperature up to 600° C. This improvement can be mostly explained by the increase in crystalline quality and the annealing of defects. Finally, the deposition of AZO films on flexible PET substrates was investigated. The films are growing as a thick porous layer of preferentially c-axis oriented columns on top of a thin dense seed layer. The evolution of the sheet resistance of the films after bending the films with different radii was studied. There is an increase in the sheet resistance of the films with decreasing bending radius, that is less pronounced for thicker films.
Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Doping in Zinc Oxide Thin Films written by Zheng Yang and published by . This book was released on 2009 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 10 to 1.8 x 10 cm -3, the dominant PL line at 9 K changes from I 1 (3.368 - 3.371 eV), to I DA (3.317 - 3.321 eV), and finally to I 8 (3.359 eV). The dominance of I, due to ionized donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that I DA has characteristics of a donor acceptor pair transition, and use a detailed, quantitative analysis to argue that it arises from Ga Zn donors paired with Zn-vacancy (V Zn) acceptors. In this analysis, the Ga Zn 0/+ energy is well-known from two-electron satellite transitions, and the V Zn 0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p -type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature T C were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ~10 19 cm -3, indicating a carrier-mediated mechanism for ferromagnetism. The anomalous Hall effect was observed in the ZnO:Co thin films. The anomalous Hall coefficient and its dependence on longitudinal resistivity were analyzed. The presence of a side-jump contribution further supports an intrinsic origin for ferromagnetism in ZnO:Co thin films. These observations together with the magnetic anisotropy and magnetoresistance results, supports an intrinsic carrier-mediated mechanism for ferromagnetic exchange in ZnO:Co diluted magnetic semiconductor materials. Well-above room temperature and electron-concentration dependent ferromagnetism was observed in n -type ZnO:Mn films, indicating long-range ferromagnetic order. Magnetic anisotropy was also observed in these ZnO:Mn films, which is another indication for intrinsic ferromagnetism. The electron-mediated ferromagnetism in n -type ZnO:Mn contradicts the existing theory that the magnetic exchange in ZnO:Mn materials is mediated by holes. Microstructural studies using transmission electron microscopy were performed on a ZnO:Mn diluted magnetic semiconductor thin film. The high-resolution imaging and electron diffraction reveal that the ZnO:Mn thin film has a high structual quality and is free of clustering/segregated phases. High-angle annular dark field imaging and x-ray diffraction patterns further support the absence of phase segregation in the film. Magnetotransport was studied on the ZnO:Mn samples, and from these measurements, the temperature dependence of the resistivity and magnetoresistance, electron carrier concentration, and anomalous Hall coefficient of the sample is discussed. The anomalous Hall coefficient depends on the resistivity, and from this relation, the presence of the quadratic dependence term supports the intrinsic spin-obit origin of the anomalous Hall effect in the ZnO:Mn thin film.
Download or read book Electrical and Optical Properties of RF Sputtered ZnO Thin Films written by Farkhund Shakeel Mahmood and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
