Download or read book Investigating Fluid Behavior Beneath a Wafer During Chemical Mechanical Polishing Processes written by Jonathan Robert Coppeta and published by . This book was released on 1999 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: A polishing platform was developed to study slurry behavior beneath a wafer during chemical mechanical polishing processes. This polishing platform was approximately a 1:2 scale model of an industrial polisher and was meant to emulate the polishing characteristic of a full-scale polisher. Polishing parameters were scaled appropriately to insure the scale model's accuracy. Parameters that were investigated using this model included slurry flow rate, platen and wafer rotation rates, wafer down force, different pad types and pad topographies, and different in situ conditioning recipes. The slurry behavior was characterized using an optical technique known as dual emission laser induced fluorescence (DELIF). By tagging slurry with fluorescent dyes, quantitative in situ measurements of slurry mixing and slurry fluid depth beneath a wafer are possible, The slurry laver beneath the wafer varied from 17 to 35 microns in height depending on the platen speed and wafer pressure. The slurry depth appeared to follow Reynolds' solution of hydrodynamic lubrication over the range of pressures and speeds examined. Friction measurements of the wafer drag on a flat polishing pad revealed that above 100 rpm, the coefficient of friction became independent of down force and platen speeds to within the resolution of the transducer. Below 100 rpm the coefficient of friction demonstrated a complex dependency on platen speed, wafer down force, and slurry flow rate. Polishing, rates of the glass substrates fell within the acceptable industry standard of approximately 1000--2000 angstroms/min. The polishing rates increased towards the edge of the wafer as compared to the center of the wafer. The effects of five major CMP parameters were investigated to determine how they affect slurry transport beneath the wafer in a designed experiment. These parameters include platen speed, slurry flow rate, wafer down force, pad manufacturer and pad grooving. All of the parameters except wafer down force affected the slurry transport and many of the parameters demonstrated non-linear interactions with other factors. In situ conditioning had a large effect on slurry transport compared with ex situ conditioning.

Download or read book Microelectronic Applications of Chemical Mechanical Planarization written by Yuzhuo Li and published by John Wiley & Sons. This book was released on 2007-12-04 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.

Download or read book Advances in Chemical Mechanical Polishing Volume 816 written by Materials Research Society. Meeting and published by . This book was released on 2004-09 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, presents advances in fundamental understanding, development, and applications of chemical-mechanical polishing (CMP).

Download or read book Chemical Mechanical Planarization Volume 767 written by Duane S. Boning and published by . This book was released on 2003-08-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.

Download or read book Analysis of Slurry Flow in Chemical mechanical Polishing written by Krzysztof D. Kopanski and published by . This book was released on 2005 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical-Mechanical Polishing (CMP) is one of the enabling processes used in the manufacture of semiconductor chips. In the relentless progress to make computer chips faster, smaller, and cheaper, the CMP process plays a prominent role. One of its limitations, however, is non-uniform polishing rate at the die and wafer scales. In this thesis, an innovative CMP machine configuration is proposed to minimize wafer-scale non-uniformity. The new face-up machine lowers wafer-scale non-uniformity by minimizing over-polishing of any particular area. The thesis discusses the kinematics and design considerations of this machine. Additionally, this thesis develops an analytical model for slurry flow in CMP in two steps. First, a simple but useful method of estimating the effective gap between the wafer and the pad during polishing is developed. The method uses pressurized fluid flow and an analytical model to estimate the effective gap between the wafer and the pad. Second, this effective gap is used in the Couette model that describes the slurry behavior in CMP. The Couette model shows that rotational speeds of the wafer and pad, the effective gap, and the sizes of the wafer and pad dictate the slurry flow rate and flow pattern in both conventional CMP and the new face-up CMP. The Couette model can be used to estimate the slurry flow rate whenever the process parameters are changed.

Download or read book Investigation of Mechanical Aspects of Chemical Mechanical Polishing written by Andrew Kunung Chang and published by . This book was released on 2002 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect written by Jie Cheng and published by Springer. This book was released on 2017-09-06 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Download or read book Chemical Mechanical Polishing 2001 Advances and Future Challenges Volume 671 written by Materials Research Society. Meeting and published by . This book was released on 2001-12-14 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2001.

Download or read book Yield Improvement in Chemical Mechanical Polishing Process Investigation of Wafer Scale written by Sutee Eamkajornsiri and published by . This book was released on 2002 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during the fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. CMP consists of a chemical process and a mechanical process being performed together to reduce height variation across a wafer. High and reliable wafer yield, which is dependent upon uniformity of the material removal rate across the entire wafer, is of critical importance in the CMP process. In this thesis, the wafer pad contact is modeled as the indentation of a rigid indenter on an elastic half-space. The model predictions are first verified against experimental observations. Simulation results for wafer yield under open loop processing conditions are presented. Wafer curvature is identified as a key design variable influencing the spatial distribution of the material removal rate. The load control, the curvature control, the combined curvature and load strategies are investigated for improving the wafer yield. It utilizes an objective function based on minimizing a moment function that represents the wafer curvature and the height of the oxide layer left for material removal. Simulation results indicate that curvature control can improve wafer yield significantly, and is more effective that just the load control.

Download or read book An Investigation Into Chemical mechanical Polishing Process of Zinc Selenide written by Hongyu Yao and published by . This book was released on 2001 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Second International Symposium on Chemical Mechanical Planariarization sic in Integrated Circuit Device Manufacturing written by Robert Leon Opila and published by The Electrochemical Society. This book was released on 1998 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Material Removal Mechanism and Process Modeling of Chemical Mechanical Polishing CMP written by Yongsik Moon and published by . This book was released on 1997 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scratch Generation Probability in Chemical Mechanical Polishing CMP Process written by Yingying Han and published by . This book was released on 2006 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical polishing (CMP) process is a critical new technology to planarize the wafer surface aided by the combined force of the chemical etching and mechanical polishing. In this process, defectivity due to scratch generation has become more and more important as it influences the wafer product quality, throughput and cost significantly with the technology developments into sub 100 nanometer technology nodes. The overall objective of this research is to investigate the effects of particle agglomeration on scratch generation and predict the scratch generation probability in CMP process. A mechanical model considering smooth wafer surface and varying height pad asperities for CMP process will be selected. The indentation depth is taken as a measurement of the scratch depth. The probability of such indentation depth of the scratch is simulated with evolving pad surface topography and changing slurry particle size distribution. Diffusion Limited Agglomeration (DLA) and Reaction Limited Agglomeration (RLA) model will be developed to describe the slurry particle size distribution evolution. Predictions for scratch generation probability are compared with those two different agglomeration models.

Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Download or read book Modeling of Chemical Mechanical Polishing at Multiple Scales written by Guanghui Fu and published by . This book was released on 2002 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Mechanical Polishing (CMP) has grown rapidly during the past decade as part of mainstream processing method in submicron integrated circuit manufacturing because of its global or near-global planarization ability. However, CMP process is influenced by many factors and is poorly understood. It makes process control and optimization very difficult. This study focuses on the modeling and simulation to facilitate better understanding and better control of the CMP process. The thesis outlines the modeling of CMP process in three scales: particle scale for material removal mechanism, wafer scale for within wafer nonuniformity issues and feature scale for dishing and erosion in metal CMP. At the particle scale, material removal mechanism is assumed to be due to local plastic deformation of wafer surface material. A mechanistic material removal model is derived that delineates the influence of abrasive (shape, size and concentration), pad (rigidity) and process parameters (pressure and relative velocity) on the material removal rate (MRR). Wafer scale model is based on the solution of indentation of elastic half space by a rigid frictionless polynomial punch. The load-displacement relationship is also derived and the conditions for unbonded or bonded contact are obtained from the boundary condition at punch edge. The corresponding viscoelastic solution is obtained through Laplace transform and elastic-viscoelastic analogy. The elastic solution is used to explain the edge effect. Viscoelastic solution is used to explain MRR decay for unconditioned pad. The relationships among wafer-pad interface pressure, wafer shape and wafer loading condition are also investigated. Feature scale model is based on Preston's relationship for material removal and constant downforce. It shows dishing is governed by polishing conditions (overpolishing, pressure, velocity), slurry (selectivity), pad characteristics (pad stiffness and bending ability), as well as wafer surface feature topography (pattern density, linewidth and pitch). This model is also valid for step height reduction when the same surface material is polished. Due to process complexity and coupling of various parameters, more fundamental research needs to be carried out and carefully designed experiments need to be done to verify the models. Recommendations for future research work is presented at the end.