Download or read book Introduction to Magnetic Random Access Memory written by Bernard Dieny and published by John Wiley & Sons. This book was released on 2016-11-14 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Download or read book Introduction to Magnetic Random Access Memory written by Bernard Dieny and published by John Wiley & Sons. This book was released on 2016-12-12 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Download or read book Magnetic Memory Technology written by Denny D. Tang and published by John Wiley & Sons. This book was released on 2021-01-07 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

Download or read book Handbook of Spintronics written by Yongbing Xu and published by Springer. This book was released on 2015-10-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.

Download or read book Magnetic Information Storage Technology written by Shan X. Wang and published by Elsevier. This book was released on 1999-05-24 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text explains how hard disk drives operate, how billions of bytes of digital information are stored and accessed, and where the technology is going. In particular, the book emphasizes the most fundamental principles of magnetic information storage, including in-depth knowledge of both magnetics and signal processing methods. Magnetic Information Storage Technology contains many graphic illustrations and an introduction of alternative storage technologies, such as optic disk recording, holographic recording, semiconductor flash memory, and magnetic random access memory. Provides the fundamentals of magnetic information storage and contrasts it with a comparison of alternative storage technologies Addresses the subject at the materials, device and system levels Addresses the needs of the multi-billion-dollar-a year magnetic recording and information storage industry Emphasizes both theoretical and experimental concepts Condenses current knowledge on magnetic information storage technology into one self-contained volume Suitable for undergraduate and graduate students, as well as seasoned researchers, engineers and professionals in data and information storage fields

Download or read book Nonvolatile Memory Design written by Hai Li and published by CRC Press. This book was released on 2017-12-19 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Download or read book Developments in Data Storage written by S. N. Piramanayagam and published by John Wiley & Sons. This book was released on 2011-10-11 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.

Download or read book Handbook of Magnetic Random Access Memory written by Weisheng Zhao and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-23 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Nanoelectronics and Information Technology written by Rainer Waser and published by John Wiley & Sons. This book was released on 2012-05-29 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Elsevier. This book was released on 2014-06-24 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Download or read book Spin Dynamics and Damping in Ferromagnetic Thin Films and Nanostructures written by Anjan Barman and published by Springer. This book was released on 2017-12-27 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the latest developments in the field of spin dynamics and magnetic damping. It discusses the various ways to tune damping, specifically, dynamic and static control in a ferromagnetic layer/heavy metal layer. In addition, it addresses all optical detection techniques for the investigation of modulation of damping, for example, the time-resolved magneto-optical Kerr effect technique.

Download or read book Block Trace Analysis and Storage System Optimization written by Jun Xu and published by Apress. This book was released on 2018-11-16 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understand the fundamental factors of data storage system performance and master an essential analytical skill using block trace via applications such as MATLAB and Python tools. You will increase your productivity and learn the best techniques for doing specific tasks (such as analyzing the IO pattern in a quantitative way, identifying the storage system bottleneck, and designing the cache policy). In the new era of IoT, big data, and cloud systems, better performance and higher density of storage systems has become crucial. To increase data storage density, new techniques have evolved and hybrid and parallel access techniques—together with specially designed IO scheduling and data migration algorithms—are being deployed to develop high-performance data storage solutions. Among the various storage system performance analysis techniques, IO event trace analysis (block-level trace analysis particularly) is one of the most common approaches for system optimization and design. However, the task of completing a systematic survey is challenging and very few works on this topic exist. Block Trace Analysis and Storage System Optimization brings together theoretical analysis (such as IO qualitative properties and quantitative metrics) and practical tools (such as trace parsing, analysis, and results reporting perspectives). The book provides content on block-level trace analysis techniques, and includes case studies to illustrate how these techniques and tools can be applied in real applications (such as SSHD, RAID, Hadoop, and Ceph systems). What You’ll Learn Understand the fundamental factors of data storage system performance Master an essential analytical skill using block trace via various applications Distinguish how the IO pattern differs in the block level from the file level Know how the sequential HDFS request becomes “fragmented” in final storage devices Perform trace analysis tasks with a tool based on the MATLAB and Python platforms Who This Book Is For IT professionals interested in storage system performance optimization: network administrators, data storage managers, data storage engineers, storage network engineers, systems engineers

Download or read book Data Storage at the Nanoscale written by Gan Fuxi and published by CRC Press. This book was released on 2015-02-09 with total page 730 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the big data era, data storage is one of the cores in the whole information chain, which includes production, transfer, sharing, and finally processing. Over the years, the growth of data volume has been explosive. Today, various storage services need memories with higher density and capacity. Moreover, information storage in the big data applic

Download or read book Emerging Non Volatile Memories written by Seungbum Hong and published by Springer. This book was released on 2014-11-18 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Download or read book Spintronics based Computing written by Weisheng Zhao and published by Springer. This book was released on 2015-05-11 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.

Download or read book Spin Dynamics in Confined Magnetic Structures I written by Burkard Hillebrands and published by Springer Science & Business Media. This book was released on 2003-07-01 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introductory chapters help newcomers to understand the basic concepts, and the more advanced chapters give the current state of the art for most spin dynamic issues in the milliseconds to femtoseconds range. Emphasis is placed on both the discussion of the experimental techniques and on the theoretical work. The comprehensive presentation of these developments makes this volume very timely and valuable for every researcher working in the field of magnetism.