Download or read book Intrinsic SiO2 Film Stress Measurements on Thermally Oxidized Si written by E. Kobeda and published by . This book was released on 1986 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for Si02 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700-1100 C; wet (H20) vs. dry (02) oxidations for (100) and (111) surfaces; and the effects of post-oxidation annealing on stress. We find an orientation dependence for intrinsic stress which scales in the following manner: (110)> (311)> (100)> (111); a reduction in stress for wet vs. dry studies; and an even larger reduction for post-oxidation anneals. A recently proposed step model seems to account for the differences in stress with Si orientation. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe the observed behavior, and we conclude that within the Deal-Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.

Download or read book A Measurement of Intrinsic SiO2 Film Stress Resulting from Low Temperature Thermal Oxidation of Si written by E. Kobeda and published by . This book was released on 1985 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past several years there have been a number of studies that have reported an intrinsic SiO2 film stress resulting from the thermal oxidation of Si at low oxidation temperatures. The intrinsic stress has been considered to be influential in Si oxidation kinetics both at the Si-SiO2 interface and by altering the diffusion of oxidant. Various stress measurements have been reported using light in single beam and double beam reflection experiments, and using the automatic Bragg angle camera (ABAC) technique. Laser techniques are not well described in the literature, often without calibration standards, diagrams and detailed procedures. We report, in the present study, a double beam technique, with calibration standards and the experimental results of one study using the technique to measure SiO2 stress on Si at room temperature. This parallel beam reflection technique has been developed in our laboratory for measuring intrinsic residual stress for Si wafers thermally oxidized at temperatures of 600-1150 C.A detailed description of this technique is provided, and calculation of stress values are consistent with those reported in the literature. Low temperature thermal oxidations resulted in compressive intrinsic SiO2 stresses greater than 4,000,000,000 dyn/sq cm. Originator supplied keywords include: Thin film growth models.

Download or read book A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon written by J. K. Srivastava and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Download or read book Thermal Oxide Growth on Silicon Intrinsic Stress and Silicon Cleaning Effects written by E. A. Irene and published by . This book was released on 1987 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper summarizes the experimental results and discusses the implications of recent research on two topics related to Si oxidation: mechanical stress effects; and the influence of impurities on the Si surface. For stress measurement, a double beam optical technique is used to measure the strain in the Si substrate due to the film stress. An intrinsic SiO2 stress is measured which increases with decreasing oxidation temperature. Controversy exists about whether the intrinsic stress affects transport of oxidant or the interface reaction; arguments for both views are presented. A combination of in-situ ellipsometry and contact angle measurements performed on a Si surface which is immersed in various liquid media has been successfully used to determine the role of HF in Si cleaning process. A fluorocarbon film was found to replace the removed SiO2, and the fluorocarbon renders the Si surface hydrophobic and amenable to the growth of a high quality SiO2 film for device applications. Keywords: Silicon, Silicon oxides.

Download or read book SiO2 Film Stress Distribution During Thermal Oxidation of Si written by E. Kobeda and published by . This book was released on 1987 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: A laser reflection technique is used to investigate the relaxation of Silicon dioxide film stress which occurs during the dry thermal oxidation of Silicon between 700 and 1000 C. Included is a determination of the stress distribution in the oxide by two independent methods: 1) measurement on oxides of various thicknesses from 100 to 800 A, and 2) repeated stress measurements on chemically thinned SiO2 films, viz. etch back analysis toward the interface. Agreement is found between these experiments. These thin film stress measurements are achieved by the use of ultra-thin Si substrates 75 micrometers). Essentially, an increase in film stress with decreasing film thickness is observed. Rapid stress relaxation is observed for all temperatures studied and is attributed to a time-dependent oxide viscosity. The influence of these measured properties on the kinetics of Si oxidation is discussed.

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book Film Stress Measurements on Thermally Oxidized Silicon written by Edward Kobeda and published by . This book was released on 1988 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Download or read book Oriented Crystallization on Amorphous Substrates written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.

Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by Elsevier. This book was released on 2009-12-08 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures

Download or read book Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and published by World Scientific. This book was released on 1990-11-29 with total page 2768 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

Download or read book Handbook of Deposition Technologies for Films and Coatings written by Rointan F. Bunshah and published by William Andrew. This book was released on 1994-12-31 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.

Download or read book Handbook of Deposition Technologies for Films and Coatings written by Rointan Framroze Bunshah and published by William Andrew. This book was released on 1994 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.

Download or read book Second Order Non linear Optics of Silicon and Silicon Nanostructures written by O. A. Aktsipetrov and published by CRC Press. This book was released on 2018-09-03 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors. The book contains six chapters that focus on: The physical properties and linear optics of silicon Basic theoretical concepts of reflected second harmonics (RSH) The authors’ theory of the generation of RSH at the non-linear medium–linear medium interface An analytical review of work on the non-linear optics of silicon The results of non-linear optical studies of silicon nanostructures A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2003 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: